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    Spectrally stable laser diode with internal reflector
    1.
    发明授权
    Spectrally stable laser diode with internal reflector 失效
    具有内部反射器的光谱稳定型激光二极管

    公开(公告)号：US5185754A

    公开(公告)日：1993-02-09

    申请号：US737194

    申请日：1991-07-29

    申请人： Richard R. Craig ,  David F. Welch ,  Erik P. Zucker ,  Donald R. Scifres ,  William J. Gignac

    发明人： Richard R. Craig ,  David F. Welch ,  Erik P. Zucker ,  Donald R. Scifres ,  William J. Gignac

    IPC分类号： H01S5/062 ,  H01S5/10 ,  H01S5/12 ,  H01S5/16

    CPC分类号： H01S5/1021 ,  H01S5/06213 ,  H01S5/10 ,  H01S5/12 ,  H01S5/16

    摘要： A laser diode construction having internal reflectors within the laser cavity to provide a stable spectral mode of laser operation. The laser includes a plurality of contiguous semiconductor layers disposed on a substrate to form a semiconductor body with at least one layer forming an active region. Electrically conductive contacts bias the heterostructure to inject current into the active region and produce lightwaves. Feedback means define two or more tandem resonant optical cavities to achieve lasing operation. The feedback means includes at least one internal light reflector within the semiconductor body. In a preferred embodiment, a pair of spaced apart internal reflectors are provided with the region between the pair also being electrically pumped to define an active internal etalon. Other embodiments have multiple periodic reflectors or combine internal reflectors with feedback gratings or passive windows at the end facets of the body.

    摘要翻译： 激光二极管结构在激光腔内具有内部反射器，以提供激光器操作的稳定光谱模式。 激光器包括设置在基板上的多个连续的半导体层，以形成具有形成有源区的至少一个层的半导体本体。 导电触点偏置异质结构以将电流注入有源区域并产生光波。 反馈意味着定义两个或多个串联谐振光学腔以实现激光操作。 反馈装置包括半导体本体内的至少一个内部光反射器。 在优选实施例中，设置一对间隔开的内部反射器，其间的区域也被电泵浦以限定活动的内标准器。 其他实施例具有多个周期性反射器或将内部反射器与身体的端面处的反馈光栅或无源窗口组合。

    III-V arsenide-nitride semiconductor
    3.
    发明授权
    III-V arsenide-nitride semiconductor 失效
    III-V族砷化物半导体

    公开(公告)号：US6100546A

    公开(公告)日：2000-08-08

    申请号：US908766

    申请日：1997-08-07

    申请人： Jo S. Major ,  David F. Welch ,  Donald R. Scifres

    发明人： Jo S. Major ,  David F. Welch ,  Donald R. Scifres

    IPC分类号： C23C16/30 ,  H01L33/32 ,  H01S5/323 ,  H01L33/00 ,  H01L31/0304

    CPC分类号： H01S5/3235 ,  C23C16/303 ,  C30B25/02 ,  C30B29/40 ,  H01L33/32 ,  H01S5/32 ,  H01S5/323 ,  H01S5/32341 ,  H01S5/32366 ,  H01S5/32375

    摘要： III-V arsenide-nitride semiconductor are disclosed. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V materials varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V material can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

    摘要翻译： 公开了III-V族氮化物半导体。 III族元素与V族元素组合，包括至少氮和砷，其浓度选择为与市售的晶体基质匹配。 这些III-V晶体的外延生长导致直接的带隙材料，其可以用于诸如发光二极管和激光器的应用中。 改变III-V材料中元素的浓度会改变带隙，从而可以产生跨越可见光谱的光以及中红外和近紫外线发射体的材料。 相反，这种材料可用于产生获得光并将光转换成电的装置，用于诸如全色光电检测器和太阳能收集器的应用。 III-V材料的生长可以通过在导致总体晶格匹配和带隙期望的序列中生长薄层的元素或化合物来实现。

    Methods for forming group III-V arsenide-nitride semiconductor materials
    5.
    发明授权
    Methods for forming group III-V arsenide-nitride semiconductor materials 失效
    形成III-V族氮化镓半导体材料的方法

    公开(公告)号：US6130147A

    公开(公告)日：2000-10-10

    申请号：US820727

    申请日：1997-03-18

    申请人： Jo S. Major ,  David F. Welch ,  Donald R. Scifres

    发明人： Jo S. Major ,  David F. Welch ,  Donald R. Scifres

    IPC分类号： H01L33/32 ,  H01S5/323 ,  H01L21/28

    CPC分类号： H01S5/3235 ,  H01L33/32 ,  H01S5/32 ,  H01S5/32341 ,  H01S5/32366 ,  H01S5/32375

    摘要： Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

    摘要翻译： 公开了用于形成III族 - 氮化物 - 氮化物半导体材料的方法。 III族元素与V族元素组合，包括至少氮和砷，其浓度选择为与市售的晶体基质匹配。 这些III-V晶体的外延生长导致直接的带隙材料，其可以用于诸如发光二极管和激光器的应用中。 改变III-V晶体中元素的浓度会改变带隙，从而可以产生跨越可见光谱的光的材料，以及中红外和近紫外线发射器。 相反，这种材料可用于产生获得光并将光转换成电的装置，用于诸如全色光电检测器和太阳能收集器的应用。 III-V晶体的生长可以通过在导致总体晶格匹配和带隙期望的序列中生长薄层的元素或化合物来实现。

    Passivation and protection of a semiconductor surface
    7.
    发明授权
    Passivation and protection of a semiconductor surface 失效
    半导体表面的钝化和保护

    公开(公告)号：US5799028A

    公开(公告)日：1998-08-25

    申请号：US683495

    申请日：1996-07-18

    申请人： Randall S. Geels ,  Julian S. Osinski ,  David F. Welch ,  Donald R. Scifres

    发明人： Randall S. Geels ,  Julian S. Osinski ,  David F. Welch ,  Donald R. Scifres

    IPC分类号： H01L33/44 ,  H01S5/028 ,  H01S3/19

    CPC分类号： H01L33/44 ,  H01S5/028 ,  H01S5/0281 ,  H01S5/0282

    摘要： A surface of a compound III-V semiconductor device is passivated and protected, respectively, by treatment with a sulfur-containing or selenium-containing passivation film on the surface followed by the deposit of a GaN, GaP, InGaP, GaAsP, ZnS or ZnSe protection layer. Prior to passivation and deposition of the protective layer, previously formed contact metalizations may be protected with a liftoff film or layer. A low temperature MOCVD process is used to deposit the protection layer so that the integrity of the previously deposited contact metalization is maintained. The preferred range for MOCVD deposition of the protection layer is in the range of about 300.degree. C. to about 450.degree. C. This processing temperature range is within a temperature range where stable contact metalization exists.

    摘要翻译： 化合物III-V半导体器件的表面分别被钝化和保护，通过用表面上的含硫或含硒钝化膜处理，然后沉积GaN，GaP，InGaP，GaAsP，ZnS或ZnSe 保护层。 在钝化和沉积保护层之前，预先形成的接触金属化可以用剥离膜或层保护。 使用低温MOCVD工艺沉积保护层，以保持先前沉积的接触金属化的完整性。 保护层的MOCVD沉积的优选范围在约300℃至约450℃的范围内。该处理温度范围在存在稳定的接触金属化的温度范围内。

    Upconversion fiber laser
    9.
    发明授权
    Upconversion fiber laser 失效
    上变频光纤激光器

    公开(公告)号：US5677920A

    公开(公告)日：1997-10-14

    申请号：US572029

    申请日：1995-12-14

    申请人： Robert G. Waarts ,  David F. Welch ,  Steven Sanders ,  Donald R. Scifres

    发明人： Robert G. Waarts ,  David F. Welch ,  Steven Sanders ,  Donald R. Scifres

    IPC分类号： G02B6/036 ,  G02B6/42 ,  H01S3/067 ,  H01S3/094 ,  H01S3/0941 ,  H01S5/10 ,  H01S5/40 ,  H01S3/30

    CPC分类号： G02B6/03638 ,  G02B6/03605 ,  G02B6/03633 ,  H01S3/06708 ,  H01S3/094003 ,  C03B2201/82 ,  C03B2203/12 ,  C03B2203/32 ,  G02B6/4204 ,  H01S3/06729 ,  H01S3/0675 ,  H01S3/094069 ,  H01S3/094092 ,  H01S3/0941 ,  H01S5/1064 ,  H01S5/4025

    摘要： An upconversion fiber laser uses a pump source which may be another fiber laser, such as a high power, diode-laser-pumped, fiber laser. The upconversion fiber laser includes an optical fiber whose core region is doped with an active lasing ionic species capable when optically pumped of undergoing upconversion excitation, such as certain rare earth ionic species, and which is embedded in a cladding of the optical fiber. Use of a fiber pump laser can improve coupling of pump light into the optical fiber, thereby achieving higher pump intensities in the core region and improved upconversion efficiency. The upconversion fiber laser's resonant laser cavity is defined by feedback means which can include at least one reflective grating formed in the optical fiber, as well as a reflective end face of the optical fiber. Any portion of the optical fiber that lies outside of the resonant laser cavity, such as any portion beyond the integral reflective grating, may act as an optical power amplifier for the upconverted laser output. The disclosure includes other embodiments in which pump brightness can be further increased with multiple pump sources.

    摘要翻译： 上转换光纤激光器使用可以是另一种光纤激光器的泵浦源，例如高功率，二极管激光泵浦的光纤激光器。 上转换光纤激光器包括光纤，其核心区域掺杂有当被泵浦经历上转换激发的活性激光离子物质，例如某些稀土离子物质，并且嵌入在光纤的包层中。 使用纤维泵浦激光器可以改善泵浦光与光纤的耦合，从而在芯区域实现更高的泵浦强度，并提高上转换效率。 上变频光纤激光器的谐振激光腔由反射装置限定，该反馈装置可以包括形成在光纤中的至少一个反射光栅以及光纤的反射端面。 位于谐振激光腔外部的光纤的任何部分，例如整个反射光栅之外的任何部分，都可以作为上变频激光输出的光功率放大器。 本公开包括其中可以使用多个泵浦源进一步增加泵亮度的其他实施例。