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    Semiconductor substrate including a plurality of insulating regions, semiconductor device having the same, and method of manufacturing the device
    5.
    发明申请
    Semiconductor substrate including a plurality of insulating regions, semiconductor device having the same, and method of manufacturing the device 审中-公开
    包括多个绝缘区域的半导体衬底，具有该绝缘区域的半导体器件及其制造方法

    公开(公告)号：US20080128764A1

    公开(公告)日：2008-06-05

    申请号：US11998188

    申请日：2007-11-29

    申请人： Won-chang Lee

    发明人： Won-chang Lee

    IPC分类号： H01L29/78 ,  H01L21/04

    CPC分类号： H01L21/26533 ,  H01L21/266 ,  H01L21/823481 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0649

    摘要： A semiconductor substrate including a plurality of insulating elements formed of an insulating material in the substrate, a semiconductor device having the same, and methods of manufacturing the substrate and the device are provided. The semiconductor device includes isolation regions formed in a semiconductor substrate, transistors formed on the semiconductor substrate, source/drain regions formed between the transistors and the isolation regions in the semiconductor substrate, and a plurality of the elements formed of insulating material being formed within the semiconductor substrate a predetermined distance beneath a top surface of the substrate.

    摘要翻译： 提供了包括在基板中由绝缘材料形成的多个绝缘元件的半导体基板，具有该绝缘材料的半导体器件以及制造该基板和该器件的方法。 半导体器件包括形成在半导体衬底中的隔离区域，形成在半导体衬底上的晶体管，形成在晶体管和半导体衬底中的隔离区域之间的源极/漏极区域，以及形成在绝缘材料内的多个元件 半导体衬底在衬底的顶表面下方预定的距离。

    Apparatus and method for installing software
    7.
    发明申请
    Apparatus and method for installing software 审中-公开
    用于安装软件的装置和方法

    公开(公告)号：US20070245342A1

    公开(公告)日：2007-10-18

    申请号：US11604330

    申请日：2006-11-27

    申请人： Won-chang Lee ,  Jae-seong Im

    发明人： Won-chang Lee ,  Jae-seong Im

    IPC分类号： G06F9/445

    CPC分类号： G06F8/63

    摘要： An apparatus and method for installing software which can be used to manufacture various types of computers according to user preference and shorten the manufacturing time, the apparatus including a software storage unit having multiple partitions storing different provided software items according to types of the provided software items; a software selection unit selecting predetermined software items from the stored software items; and a control unit installing the selected software items in a predetermined partition of the software storage unit.

    摘要翻译： 一种用于安装可根据用户偏好来制造各种计算机并缩短制造时间的软件的装置和方法，所述装置包括具有多个分区的软件存储单元，所述多个分区根据所提供的软件项的类型存储不同的提供的软件项 ; 软件选择单元，从存储的软件项中选择预定的软件; 以及控制单元，将所选择的软件项目安装在软件存储单元的预定分区中。

    Method for forming word line of semiconductor device
    8.
    发明授权
    Method for forming word line of semiconductor device 有权
    半导体器件字线形成方法

    公开(公告)号：US06787426B2

    公开(公告)日：2004-09-07

    申请号：US10603611

    申请日：2003-06-26

    申请人： Won Chang Lee

    发明人： Won Chang Lee

    IPC分类号： H01L21336

    CPC分类号： H01L29/66545 ,  H01L21/76801

    摘要： A method for forming word line of semiconductor device wherein a lower portion of the word line on the channel region is a I-type and a upper portion of the word line is a line-type is disclosed. The method comprises (a) forming a sacrificial insulation film on a semiconductor substrate including an active region; (b) etching the sacrificial insulation film to form an I-type sacrificial insulation film pattern whereon a channel region is to be formed; (c) forming a source/drain region; (d) forming a first interlayer insulation film; (e) planarizing the first interlayer insulation film to expose the sacrificial insulation film pattern; (f) sequentially forming a insulation film and a second interlayer insulation film; (g) etching the second interlayer insulation film and insulation film using a word line mask; (h) removing the sacrificial insulation film pattern; (i) growing a gate oxide film; (j) forming a conductive layer; and (k) planarizing the conductive layer.

    摘要翻译： 一种用于形成半导体器件的字线的方法，其中沟道区上的字线的下部是I型，并且字线的上部是线型。 该方法包括：（a）在包括有源区的半导体衬底上形成牺牲绝缘膜; （b）蚀刻牺牲绝缘膜以形成其中将形成沟道区的I型牺牲绝缘膜图案; （c）形成源/漏区; （d）形成第一层间绝缘膜; （e）平面化所述第一层间绝缘膜以暴露所述牺牲绝缘膜图案; （f）依次形成绝缘膜和第二层间绝缘膜; （g）使用字线掩模蚀刻第二层间绝缘膜和绝缘膜; （h）去除牺牲绝缘膜图案; （i）生长栅氧化膜; （j）形成导电层; 和（k）平坦化导电层。