Perpendicular write head having a stepped flare structure and method of manufacture thereof
    2.
    发明授权
    Perpendicular write head having a stepped flare structure and method of manufacture thereof 有权
    具有阶梯式火炬结构的垂直写头及其制造方法

    公开(公告)号:US08797685B2

    公开(公告)日:2014-08-05

    申请号:US12646879

    申请日:2009-12-23

    IPC分类号: G11B5/127

    摘要: A magnetic write head for data recording having a magnetic write pole with a stepped magnetic shell structure that defines a secondary flare point. The secondary flare point defined by the magnetic shell portion can be more tightly controlled with respect to its distance from the air bearing surface (ABS) of the write head than can a traditional flare point that is photolithographically on the main pole structure. This allows the effective flare point of the write head to be moved much closer to the ABS than would otherwise be possible using currently available tooling and photolithography techniques. The write head also includes a non-magnetic spacer layer formed over the magnetic shell structure that is recessed from the ABS by a distance that is greater than that of the magnetic shell portion. A magnetic shield is formed over the magnetic shell and non-magnetic spacer.

    摘要翻译: 一种用于数据记录的磁写头,具有限定二次闪光点的阶梯状磁性壳结构的磁性写入极。 由磁性壳体部分限定的次级火炬点可以相对于与写入磁头的空气轴承表面(ABS)的距离比在主极结构上光刻的传统闪光点更加严格地控制。 这使得使用当前可用的工具和光刻技术可以使写入头的有效喇叭点移动得更接近ABS。 写头还包括形成在磁性壳结构上的非磁性间隔层,其从ABS凹陷的距离大于磁性壳部分的距离。 在磁性壳体和非磁性间隔物上形成磁屏蔽。

    Methods for plating write pole shield structures with ultra-thin metal gap seed layers
    4.
    发明授权
    Methods for plating write pole shield structures with ultra-thin metal gap seed layers 有权
    用超薄金属间隙种子层写电极屏蔽结构的方法

    公开(公告)号:US08021535B2

    公开(公告)日:2011-09-20

    申请号:US12005556

    申请日:2007-12-26

    IPC分类号: C25D5/02

    CPC分类号: C25D7/123 C25D5/022

    摘要: Methods and structures for electroplating shield structures for perpendicular thin film write poles having ultra thin non-magnetic top gaps on the order of a few nanometers are disclosed. Ultra thin, conductive seed layers serve a dual purpose as both plating seed layer and non-magnetic top gap for the write pole. Due to reduced current carrying capacity of ultra thin seed layers, an additional thick seed layer is also employed to aid delivering plating current to regions near the pole.

    摘要翻译: 公开了具有几纳米数量级的超薄非磁性顶部间隙的垂直薄膜写入极的电镀屏蔽结构的方法和结构。 超薄导电种子层具有双重目的,作为电极种子层和写入极的非磁性顶部间隙。 由于超薄种子层的电流承载能力降低,还使用另外的厚种子层来帮助将电镀电流传递到极附近的区域。

    Methods for plating write pole shield structures with ultra-thin metal gap seed layers
    7.
    发明申请
    Methods for plating write pole shield structures with ultra-thin metal gap seed layers 有权
    用超薄金属间隙种子层写电极屏蔽结构的方法

    公开(公告)号:US20090166210A1

    公开(公告)日:2009-07-02

    申请号:US12005556

    申请日:2007-12-26

    IPC分类号: C25D7/12

    CPC分类号: C25D7/123 C25D5/022

    摘要: Methods and structures for electroplating shield structures for perpendicular thin film write poles having ultra thin non-magnetic top gaps on the order of a few nanometers are disclosed. Ultra thin, conductive seed layers serve a dual purpose as both plating seed layer and non-magnetic top gap for the write pole. Due to reduced current carrying capacity of ultra thin seed layers, an additional thick seed layer is also employed to aid delivering plating current to regions near the pole.

    摘要翻译: 公开了具有几纳米数量级的超薄非磁性顶部间隙的垂直薄膜写入极的电镀屏蔽结构的方法和结构。 超薄导电种子层具有双重目的,作为电极种子层和写入极的非磁性顶部间隙。 由于超薄种子层的电流承载能力降低,还使用另外的厚种籽层来帮助将电镀电流输送到极附近的区域。

    Electroplating on ultra-thin seed layers
    9.
    发明申请
    Electroplating on ultra-thin seed layers 审中-公开
    电镀超薄种子层

    公开(公告)号:US20080149490A1

    公开(公告)日:2008-06-26

    申请号:US11645397

    申请日:2006-12-26

    IPC分类号: C23C28/00

    摘要: Methods and structures for the electroplating on ultra-thin seed layers are disclosed. A dual layer structure is utilized, consisting of a thicker, highly conductive layer surrounding device structures. Within the device die, an ultra-thin seed layer is employed, which is electrically coupled to the conduction layer. Using this technique, electroplating of critical device structures can be carefully controlled and made uniform across the full diameter of the wafer. The technique also allow for the deployment of ultra-thin seed layers of varying thickness and composition in different locations within the circuit device, or in different die on the wafer.

    摘要翻译: 公开了在超薄种子层上电镀的方法和结构。 使用双层结构,由围绕器件结构的较厚的高导电层组成。 在器件管芯内部,采用超薄种子层,其电耦合到导电层。 使用这种技术,关键器件结构的电镀可以被仔细地控制并在晶片的整个直径上均匀。 该技术还允许在电路装置内的不同位置或晶片上的不同模具中部署不同厚度和组成的超薄种子层。