公开(公告)号：US06905940B2

公开(公告)日：2005-06-14

申请号：US10247672

申请日：2002-09-19

申请人： Nitin K. Ingle ,  Xinyua Xia ,  Zheng Yuan

发明人： Nitin K. Ingle ,  Xinyua Xia ,  Zheng Yuan

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/762

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45512 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801 ,  Y10S438/958

摘要： Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

摘要翻译： 本发明的实施例提供了与氧化硅的化学气相沉积相关的方法，装置和装置。 在一个实施例中，使用单步沉积工艺来有效地形成表现出高共形性和良好间隙填充性能的氧化硅层。 在预沉积气体流动稳定阶段和初始沉积阶段期间，含硅气体：氧化剂沉积气体的比例相对较低，从而以相对较慢的速率形成高度保形的氧化硅。 在沉积工艺步骤的过程中，含硅气体：氧化剂气体的比率增加，导致在沉积工艺步骤的后续阶段以相对较快的速率形成较小保形的氧化物材料。

公开(公告)号：US20060148273A1

公开(公告)日：2006-07-06

申请号：US11367866

申请日：2006-03-03

申请人： Nitin Ingle ,  Xinyua Xia ,  Zheng Yuan

发明人： Nitin Ingle ,  Xinyua Xia ,  Zheng Yuan

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45512 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801 ,  Y10S438/958

摘要： Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

公开(公告)号：US20050064730A1

公开(公告)日：2005-03-24

申请号：US10979471

申请日：2004-11-01

申请人： Nitin Ingle ,  Xinyua Xia ,  Zheng Yuan

发明人： Nitin Ingle ,  Xinyua Xia ,  Zheng Yuan

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/469

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45512 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801 ,  Y10S438/958

摘要： Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a predeposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

摘要翻译： 本发明的实施例提供了与氧化硅的化学气相沉积相关的方法，装置和装置。 在一个实施例中，使用单步沉积工艺来有效地形成表现出高共形性和良好间隙填充性能的氧化硅层。 在预沉积气流稳定阶段和初始沉积阶段期间，含硅气体：氧化剂沉积气体的比例相对较低，导致以相对较慢的速率形成高度保形的氧化硅。 在沉积工艺步骤的过程中，含硅气体：氧化剂气体的比率增加，导致在沉积工艺步骤的后续阶段以相对较快的速率形成较小保形的氧化物材料。

公开(公告)号：US07459405B2

公开(公告)日：2008-12-02

申请号：US11493211

申请日：2006-07-25

申请人： Nitin K. Ingle ,  Xinyua Xia ,  Zheng Yuan

发明人： Nitin K. Ingle ,  Xinyua Xia ,  Zheng Yuan

IPC分类号： H01L21/469 ,  H01L21/31 ,  H01L21/26

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45512 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801 ,  Y10S438/958

摘要： Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

摘要翻译： 本发明的实施例提供了与氧化硅的化学气相沉积相关的方法，装置和装置。 在一个实施例中，使用单步沉积工艺来有效地形成表现出高共形性和良好间隙填充性能的氧化硅层。 在预沉积气体流动稳定阶段和初始沉积阶段期间，含硅气体：氧化剂沉积气体的比例相对较低，从而以相对较慢的速率形成高度保形的氧化硅。 在沉积工艺步骤的过程中，含硅气体：氧化剂气体的比率增加，导致在沉积工艺步骤的后续阶段以相对较快的速率形成较小保形的氧化物材料。

公开(公告)号：US07208425B2

公开(公告)日：2007-04-24

申请号：US11367866

申请日：2006-03-03

申请人： Nitin K. Ingle ,  Xinyua Xia ,  Zheng Yuan

发明人： Nitin K. Ingle ,  Xinyua Xia ,  Zheng Yuan

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45512 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801 ,  Y10S438/958

摘要： Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

摘要翻译： 本发明的实施例提供了与氧化硅的化学气相沉积相关的方法，装置和装置。 在一个实施例中，使用单步沉积工艺来有效地形成表现出高共形性和良好间隙填充性能的氧化硅层。 在预沉积气体流动稳定阶段和初始沉积阶段期间，含硅气体：氧化剂沉积气体的比例相对较低，从而以相对较慢的速率形成高度保形的氧化硅。 在沉积工艺步骤的过程中，含硅气体：氧化剂气体的比率增加，导致在沉积工艺步骤的后续阶段以相对较快的速率形成较小保形的氧化物材料。

公开(公告)号：US20060264062A1

公开(公告)日：2006-11-23

申请号：US11493211

申请日：2006-07-25

申请人： Nitin Ingle ,  Xinyua Xia ,  Zheng Yuan

发明人： Nitin Ingle ,  Xinyua Xia ,  Zheng Yuan

IPC分类号： H01L21/31

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45512 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801 ,  Y10S438/958

摘要： Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

公开(公告)号：US07037859B2

公开(公告)日：2006-05-02

申请号：US10979471

申请日：2004-11-01

申请人： Nitin K. Ingle ,  Xinyua Xia ,  Zheng Yuan

发明人： Nitin K. Ingle ,  Xinyua Xia ,  Zheng Yuan

IPC分类号： H01L21/31

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45512 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801 ,  Y10S438/958

摘要： Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

摘要翻译： 本发明的实施例提供了与氧化硅的化学气相沉积相关的方法，装置和装置。 在一个实施例中，使用单步沉积工艺来有效地形成表现出高共形性和良好间隙填充性能的氧化硅层。 在预沉积气体流动稳定阶段和初始沉积阶段期间，含硅气体：氧化剂沉积气体的比例相对较低，从而以相对较慢的速率形成高度保形的氧化硅。 在沉积工艺步骤的过程中，含硅气体：氧化剂气体的比率增加，导致在沉积工艺步骤的后续阶段以相对较快的速率形成较小保形的氧化物材料。