公开(公告)号：US20140217474A1

公开(公告)日：2014-08-07

申请号：US14088793

申请日：2013-11-25

Applicant: Jun-Taek Lee ,  Sang-Il Jung ,  Yi-Tae Kim ,  Woon-Phil Yang

Inventor： Jun-Taek Lee ,  Sang-Il Jung ,  Yi-Tae Kim ,  Woon-Phil Yang

IPC: H01L31/101 ,  H01L27/148

CPC classification number: H01L27/14605 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14641

Abstract: A unit pixel of an image sensor includes a photoelectric conversion region, a floating diffusion region, and a transfer gate. The photoelectric conversion region is in an active region defined by an isolation region of a semiconductor substrate. The photoelectric conversion region generates electric charges corresponding to incident light. The transfer gate transfers the electric charges to the floating diffusion region, which is located in the active region. The transfer gate includes first and second portions divided relative to a reference line, and at least one of the first or second portions does not overlap the isolation region

Abstract translation: 图像传感器的单位像素包括光电转换区域，浮动扩散区域和传输门极。 光电转换区域由半导体衬底的隔离区限定的有源区。 光电转换区域产生与入射光对应的电荷。 传输门将电荷传送到位于有源区域中的浮动扩散区域。 传输门包括相对于参考线分开的第一和第二部分，并且第一或第二部分中的至少一个不与隔离区域重叠

公开(公告)号：US08021912B2

公开(公告)日：2011-09-20

申请号：US12320543

申请日：2009-01-29

Applicant: Yi Tae Kim ,  Kyung Ho Lee ,  Sae-Young Kim ,  Yun Ho Jang ,  Jung Chak Ahn

Inventor： Yi Tae Kim ,  Kyung Ho Lee ,  Sae-Young Kim ,  Yun Ho Jang ,  Jung Chak Ahn

IPC: H01L21/00

CPC classification number: H01L27/14643 ,  H01L27/14623 ,  H01L27/14632

Abstract: A method of manufacturing an image sensor is provided. In this method, a photoelectric conversion unit may be formed within a semiconductor substrate, wherein the semiconductor substrate includes an active pixel region and an optical black region. An annealing layer may be formed on the active pixel region and the optical black region and etched so that the annealing layer covers at least a portion of the optical black region. A wiring pattern may be formed on the annealing layer. A light-blocking pattern may be formed on the wiring pattern so as to cover the entire photoelectric conversion unit of the optical black region, thereby blocking light from being incident upon the optical black region.

Abstract translation: 提供一种制造图像传感器的方法。 在该方法中，可以在半导体衬底内形成光电转换单元，其中半导体衬底包括有源像素区域和光学黑色区域。 可以在有源像素区域和光学黑色区域上形成退火层并进行蚀刻，使得退火层覆盖光学黑色区域的至少一部分。 可以在退火层上形成布线图案。 可以在布线图案上形成遮光图案，以覆盖光学黑色区域的整个光电转换单元，从而阻止光入射到光学黑色区域。

公开(公告)号：US07825970B2

公开(公告)日：2010-11-02

申请号：US11826588

申请日：2007-07-17

Applicant: Sung-Ho Choi ,  Jung-Chak Ahn ,  Yi-Tae Kim ,  Young-Chan Kim ,  Hae-Kyung Kong

Inventor： Sung-Ho Choi ,  Jung-Chak Ahn ,  Yi-Tae Kim ,  Young-Chan Kim ,  Hae-Kyung Kong

IPC: H04N3/14 ,  H04N5/335

CPC classification number: H01L27/14645 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14641 ,  H01L27/14656 ,  H04N5/347 ,  H04N5/37457

Abstract: Example embodiments may provide a CMOS image sensor. The CMOS image sensor may include a plurality of unit blocks each including two unit pixels. Each unit block may include two photodiodes having a hexagonal shape, a floating diffusion shared by the two unit pixels, a first transfer transistor and a second transfer transistor between the floating diffusion and the two photodiodes, respectively, a reset transistor connected with the floating diffusion, a drive transistor with a gate connected with the floating diffusion, and/or a selection transistor connected to the drive transistor in series. Example embodiment CMOS image sensors may be used in digital cameras, mobile devices, computer cameras, or the like.

Abstract translation: 示例性实施例可以提供CMOS图像传感器。 CMOS图像传感器可以包括多个单元块，每个单元块包括两个单位像素。 每个单元块可以包括具有六边形形状的两个光电二极管，由两个单位像素共享的浮动扩散，分别在浮动扩散和两个光电二极管之间的第一传输晶体管和第二传输晶体管，与浮动扩散器连接的复位晶体管 ，具有与浮动扩散连接的栅极的驱动晶体管和/或串联连接到驱动晶体管的选择晶体管。 示例性实施例CMOS图像传感器可以用于数码相机，移动设备，计算机照相机等。

公开(公告)号：US20080179625A1

公开(公告)日：2008-07-31

申请号：US11985016

申请日：2007-11-13

Applicant: Kyung-Ho Lee ,  Yi-Tae Kim ,  Jung-Chak Ahn

Inventor： Kyung-Ho Lee ,  Yi-Tae Kim ,  Jung-Chak Ahn

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689 ,  H01L29/1054

Abstract: An image sensor includes a photo sensitive device and at lest one transistor such as a drive transistor for converting charge accumulated by the photo sensitive device into an electrical signal. That at least one transistor includes a channel region comprised of a plurality of differently doped regions that generates a conduction band offset in the channel region. Such a conductive band offset increases electron mobility in the channel region for minimizing charge trapping at an interface between a gate dielectric and the semiconductor substrate for minimizing flicker noise.

Abstract translation: 图像传感器包括光敏器件和至少一个晶体管，例如用于将感光器件累积的电荷转换成电信号的驱动晶体管。 至少一个晶体管包括由在沟道区域中产生导带偏移的多个不同掺杂区域组成的沟道区域。 这种导电带偏移增加了沟道区域中的电子迁移率，以最小化在栅极电介质和半导体衬底之间的界面处的电荷俘获，以最小化闪烁噪声。

公开(公告)号：US20080018765A1

公开(公告)日：2008-01-24

申请号：US11826588

申请日：2007-07-17

Applicant: Sung-Ho Choi ,  Jung-Chak Ahn ,  Yi-Tae Kim ,  Young-Chan Kim ,  Hae-Kyung Kong

Inventor： Sung-Ho Choi ,  Jung-Chak Ahn ,  Yi-Tae Kim ,  Young-Chan Kim ,  Hae-Kyung Kong

IPC: H04N3/14

CPC classification number: H01L27/14645 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14641 ,  H01L27/14656 ,  H04N5/347 ,  H04N5/37457

Abstract: Example embodiments may provide a CMOS image sensor. The CMOS image sensor may include a plurality of unit blocks each including two unit pixels. Each unit block may include two photodiodes having a hexagonal shape, a floating diffusion shared by the two unit pixels, a first transfer transistor and a second transfer transistor between the floating diffusion and the two photodiodes, respectively, a reset transistor connected with the floating diffusion, a drive transistor with a gate connected with the floating diffusion, and/or a selection transistor connected to the drive transistor in series. Example embodiment CMOS image sensors may be used in digital cameras, mobile devices, computer cameras, or the like.

Abstract translation: 示例性实施例可以提供CMOS图像传感器。 CMOS图像传感器可以包括多个单元块，每个单元块包括两个单位像素。 每个单元块可以包括具有六边形形状的两个光电二极管，由两个单位像素共享的浮动扩散，分别在浮动扩散和两个光电二极管之间的第一传输晶体管和第二传输晶体管，与浮动扩散器连接的复位晶体管 ，具有与浮动扩散连接的栅极的驱动晶体管和/或串联连接到驱动晶体管的选择晶体管。 示例性实施例CMOS图像传感器可以用于数码相机，移动设备，计算机照相机等。

公开(公告)号：US07244920B2

公开(公告)日：2007-07-17

申请号：US11342010

申请日：2006-01-26

Applicant: Young-Chan Kim ,  Yi-Tae Kim

Inventor： Young-Chan Kim ,  Yi-Tae Kim

IPC: H01L27/00 ,  H01L31/00

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/37457

Abstract: A CMOS sensor array includes a plurality of unit blocks. A unit block includes: N pairs of photo diode regions arranged in a first direction; 2N transfer transistors respectively corresponding to the photo diode regions, wherein each of the transfer transistors is formed at a corner of the corresponding photo diode region, and wherein for each pair of photo diode regions the two corresponding transfer transistors symmetrically oppose each other; N floating diffusion nodes, wherein each of the floating diffusion nodes is respectively arranged between a pair of photo diode regions, and wherein each of the floating diffusion nodes is shared by the two corresponding transfer transistors and the pair of photo diode regions; at least one metal line for coupling the floating diffusion nodes; a reset transistor for resetting a voltage of the floating diffusion nodes; a readout circuit including at least one transistor for sampling the floating diffusion node, wherein the reset transistor and the readout circuit are disposed between the pair of photo diode regions.

Abstract translation: CMOS传感器阵列包括多个单元块。 单位块包括：沿第一方向布置的N对光电二极管区域; 分别对应于光电二极管区域的2N个转移晶体管，其中每个转移晶体管形成在相应的光电二极管区域的拐角处，并且其中对于每对光电二极管区域，两个对应的转移晶体管彼此对称地对置; N个浮动扩散节点，其中每个浮动扩散节点分别布置在一对光电二极管区域之间，并且其中每个浮动扩散节点由两个对应的传输晶体管和一对光电二极管区域共享; 用于耦合浮动扩散节点的至少一条金属线; 复位晶体管，用于复位浮动扩散节点的电压; 读出电路，包括用于对浮动扩散节点进行采样的至少一个晶体管，其中复位晶体管和读出电路设置在所述一对光电二极管区域之间。

公开(公告)号：US20120262622A1

公开(公告)日：2012-10-18

申请号：US13445014

申请日：2012-04-12

Applicant: Yi Tae Kim ,  Sung-Ho Choi

Inventor： Yi Tae Kim ,  Sung-Ho Choi

IPC: H04N5/225 ,  H01L31/0224

CPC classification number: H04N5/361 ,  H04N5/3658 ,  H04N5/3745

Abstract: An image sensor includes first pixels in an active region and second pixels in an optical black region of a pixel array. The first pixels have a gate that receives an active transfer control signal, and the second pixels have a gate that receives a passive transfer control signal, like a ground voltage.

Abstract translation: 图像传感器包括有源区域中的第一像素和像素阵列的光学黑色区域中的第二像素。 第一像素具有接收有源传输控制信号的栅极，并且第二像素具有接收诸如接地电压的无源传输控制信号的栅极。

公开(公告)号：US08164127B2

公开(公告)日：2012-04-24

申请号：US12585501

申请日：2009-09-16

Applicant: Kyung-Ho Lee ,  Kwang-il Jung ,  Jung-Chak Ahn ,  Yi-Tae Kim ,  Kyoung-Sik Moon ,  Bum-Suk Kim ,  Young-Bae Kee ,  Dong-Young Lee ,  Tae-Sub Jung ,  Kang-Sun Lee

Inventor： Kyung-Ho Lee ,  Kwang-il Jung ,  Jung-Chak Ahn ,  Yi-Tae Kim ,  Kyoung-Sik Moon ,  Bum-Suk Kim ,  Young-Bae Kee ,  Dong-Young Lee ,  Tae-Sub Jung ,  Kang-Sun Lee

IPC: H01L31/113

CPC classification number: H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

Abstract: A pixel cell includes a substrate, an epitaxial layer, and a photo converting device in the epitaxial layer. The epitaxial layer has a doping concentration profile of embossing shape, and includes a plurality of layers that are stacked on the substrate. The photo converting device does not include a neutral region that has a constant potential in the vertical direction. Therefore, the image sensor including the pixel cell has high quantization efficiency, and a crosstalk between photo-converting devices is decreased.

Abstract translation: 像素单元包括外延层中的衬底，外延层和光转换器件。 外延层具有压花形状的掺杂浓度分布，并且包括层叠在基板上的多个层。 光转换装置不包括在垂直方向上具有恒定电位的中性区域。 因此，包括像素单元的图像传感器具有高量化效率，并且光转换装置之间的串扰减小。

公开(公告)号：US08003424B2

公开(公告)日：2011-08-23

申请号：US11983913

申请日：2007-11-13

Applicant: Kyung-Ho Lee ,  Yi-Tae Kim ,  Jung-Chak Ahn ,  Sae-Young Kim

Inventor： Kyung-Ho Lee ,  Yi-Tae Kim ,  Jung-Chak Ahn ,  Sae-Young Kim

IPC: H01L21/00

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/14689 ,  H01L31/035281

Abstract: A CMOS image sensor includes a photosensitive device, a floating diffusion region, a transfer transistor, and a pocket photodiode formed in a semiconductor substrate of a first conductivity type. The floating diffusion region is of a second conductivity type. The transfer transistor has a channel region disposed between the photosensitive device and the floating diffusion region. The pocket photodiode is of the second conductivity type and is formed under a first portion of a bottom surface of the channel region such that a second portion of the bottom surface of the channel region abuts the semiconductor substrate.

Abstract translation: CMOS图像传感器包括形成在第一导电类型的半导体衬底中的感光器件，浮动扩散区域，转移晶体管和腔室光电二极管。 浮动扩散区域是第二导电类型。 转移晶体管具有设置在感光器件和浮动扩散区域之间的沟道区域。 袋状光电二极管是第二导电类型，并且形成在沟道区的底表面的第一部分下方，使得沟道区的底表面的第二部分与半导体衬底相邻。

公开(公告)号：US07652707B2

公开(公告)日：2010-01-26

申请号：US11449326

申请日：2006-06-08

Applicant: Young-Chan Kim ,  Tetsuo Asaba ,  Yi-Tae Kim

Inventor： Young-Chan Kim ,  Tetsuo Asaba ,  Yi-Tae Kim

IPC: H04N3/14 ,  H04N5/335 ,  H01L27/00

CPC classification number: H01L27/14603 ,  H04N5/3741

Abstract: A pixel circuit of an image sensor includes a floating diffusion node and a reset transistor. The reset transistor is coupled between the floating diffusion node and a reset control signal node of another pixel circuit of the image sensor. A voltage applied on the reset control signal node of the other pixel circuit is a reset voltage transmitted to the floating diffusion node via the reset transistor.

Abstract translation: 图像传感器的像素电路包括浮动扩散节点和复位晶体管。 复位晶体管耦合在浮动扩散节点和图像传感器的另一像素电路的复位控制信号节点之间。 施加在另一像素电路的复位控制信号节点上的电压是通过复位晶体管传输到浮动扩散节点的复位电压。