公开(公告)号：US08587700B2

公开(公告)日：2013-11-19

申请号：US12589157

申请日：2009-10-19

Applicant: Jun-taek Lee ,  Byung-hyun Yim ,  Kwang-hee Lee ,  Ji-hoon Jung

Inventor： Jun-taek Lee ,  Byung-hyun Yim ,  Kwang-hee Lee ,  Ji-hoon Jung

IPC: H04N9/64 ,  H04N5/335

CPC classification number: H04N17/002

Abstract: A method of detecting defects in an image sensor that may occur from a floating diffusion area of the image sensor, a tester using the method, and a control signal generator using the method include a photo diode generating charges corresponding to an image signal; a transmission transistor having a first terminal connected to a the photodiode and a second terminal connected to a floating diffusion area, thereby transmitting the charges generated in the photo diode to the floating diffusion area in response to a charge transmission control signal; and a reset transistor having a first terminal applied by a reset voltage and a second transistor connected to the floating diffusion area, thereby transmitting the reset voltage to the floating diffusion area in response to a reset control signal. The reset transistor is turned on during at least one sampling zone selected between reset level sampling and signal level sampling that are performed with respect to the image sensor.

Abstract translation: 一种检测图像传感器中的可能从图像传感器的浮动扩散区域发生的缺陷的方法，使用该方法的测试仪和使用该方法的控制信号发生器的方法包括：光电二极管产生与图像信号相对应的电荷; 传输晶体管，其具有连接到光电二极管的第一端子和连接到浮动扩散区域的第二端子，从而响应于电荷传输控制信号将在光电二极管中产生的电荷传输到浮动扩散区域; 以及复位晶体管，其具有通过复位电压施加的第一端子和连接到浮动扩散区域的第二晶体管，从而响应于复位控制信号将复位电压传输到浮动扩散区域。 复位晶体管在相对于图像传感器执行的复位电平采样和信号电平采样之间所选择的至少一个采样区域中导通。

公开(公告)号：US07446359B2

公开(公告)日：2008-11-04

申请号：US11063025

申请日：2005-02-22

Applicant: Jun Taek Lee ,  Woon Phil Yang

Inventor： Jun Taek Lee ,  Woon Phil Yang

IPC: H01L31/062 ,  H01L31/113

CPC classification number: H01L27/14687 ,  H01L27/14603 ,  H01L27/14623 ,  H01L27/14636

Abstract: Integrated circuit devices include a semiconductor substrate and a sensor array region including a plurality of photoelectric conversion elements arranged in an array on the semiconductor substrate. A plurality of interlayer dielectric layers are on the sensor array region and a plurality of light transmissive regions extend through the plurality of interlayer dielectric layers from respective ones of the plurality of photoelectric conversion elements. A plurality of light reflecting metal elements are between ones of the plurality of interlayer dielectric layers, positioned outside of and between ones of the light transmissive regions. A photo absorption layer is formed on an upper surface of ones of the plurality of metal elements that inhibits reflection of light associated with the photoelectric conversion element of one of the light transmissive regions to another of the light-transmissive regions to limit crosstalk between the plurality of photoelectric conversion elements.

Abstract translation: 集成电路器件包括半导体衬底和包括在半导体衬底上排列成阵列的多个光电转换元件的传感器阵列区域。 多个层间电介质层位于传感器阵列区域上，并且多个透光区域从多个光电转换元件中的相应的多个光电转换元件延伸穿过多个层间电介质层。 多个光反射金属元件位于多个层间电介质层之间，位于透光区域之间和之间。 在多个金属元件中的一个的上表面上形成光吸收层，其抑制与其中一个透光区域的光电转换元件相关联的光与另一个透光区域的反射，以限制多个金属元件之间的串扰 的光电转换元件。

公开(公告)号：US20080158378A1

公开(公告)日：2008-07-03

申请号：US12004716

申请日：2007-12-21

Applicant: Jun-Taek Lee

Inventor： Jun-Taek Lee

IPC: H04N5/228 ,  H04N5/335

CPC classification number: H04N5/361 ,  H04N5/357 ,  H04N5/374 ,  H04N5/376

Abstract: A method for driving an image sensor includes the steps of: sensing temperature from the image sensor; selecting a voltage level of a control signal in accordance with the sensed temperature; and detecting an image in response to the control signal having the selected voltage level. An image sensor comprises a temperature sensor configured to sense a temperature of the image sensor and a pixel array configured to detect an image in response to a control signal, wherein the control signal varies in voltage level as a function of the sensed temperature.

Abstract translation: 一种用于驱动图像传感器的方法包括以下步骤：感测来自图像传感器的温度; 根据感测到的温度选择控制信号的电压电平; 以及响应于具有所选择的电压电平的控制信号来检测图像。 图像传感器包括被配置为感测图像传感器的温度的温度传感器和被配置为响应于控制信号检测图像的像素阵列，其中控制信号作为感测温度的函数在电压电平上变化。

公开(公告)号：US06433369B1

公开(公告)日：2002-08-13

申请号：US09862425

申请日：2001-05-23

Applicant: Sang-Il Jung ,  Jun-Taek Lee

Inventor： Sang-Il Jung ,  Jun-Taek Lee

IPC: H01L27148

Abstract: A barrier area is located adjacent a horizontal transfer area and spaced from a field insulating area. The barrier area includes an insulating layer and a conductor extending from the horizontal transfer layer over the surface of a semiconductor substrate, a barrier layer of a second conductivity type formed under the surface of the semiconductor substrate and adjacent a first impurity layer of a first conductivity type of the horizontal transfer area, and a second impurity layer extending from the horizontal transfer area and formed under the barrier layer. A discharge area is located between the barrier area and the field insulating area. The discharge area includes a field insulating layer interposed between the insulating layer and the conductor extending from the barrier layer over the surface of the semiconductor substrate, and a discharge layer of the first conductivity type formed under the surface of the semiconductor substrate and adjacent the barrier layer of the barrier area over the surface layer. An impurity concentration of the discharge layer is greater than that of the first impurity layer.

公开(公告)号：US07659563B2

公开(公告)日：2010-02-09

申请号：US11592577

申请日：2006-11-04

Applicant: Jun-Taek Lee

Inventor： Jun-Taek Lee

IPC: H01L31/062 ,  H01L31/113

CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/14683

Abstract: A complementary metal-oxide silicon (CMOS) image sensor includes a semiconductor layer of a first conductivity type, a plurality of pixels located in the semiconductor layer, a photoelectric converter located in each of the plurality of pixels in the semiconductor layer and includes a region doped with impurities of a second conductivity type. The CMOS image sensor further includes a deep well of a first conductivity type located in a lower position than the photoelectric converter in the semiconductor layer and has a higher impurity concentration than that of the semiconductor layer. The deep well is located only in a portion of each of the plurality of pixels.

Abstract translation: 互补金属氧化物硅（CMOS）图像传感器包括第一导电类型的半导体层，位于半导体层中的多个像素，位于半导体层中的多个像素中的每一个中的光电转换器， 掺杂有第二导电类型的杂质。 CMOS图像传感器还包括位于比半导体层中的光电转换器更低的位置的第一导电类型的深阱，并且具有比半导体层的杂质浓度更高的杂质浓度。 深阱仅位于多个像素中的每一个的一部分中。

公开(公告)号：US07427740B2

公开(公告)日：2008-09-23

申请号：US11333886

申请日：2006-01-18

Applicant: Sun-Yong Park ,  Jun-Taek Lee

Inventor： Sun-Yong Park ,  Jun-Taek Lee

IPC: H01L31/00

CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14818

Abstract: An image sensor comprises an active pixel region that includes a plurality of unit pixels arranged in a matrix pattern, a first optical black region formed adjacent to the active pixel region, wherein a plurality of shaded unit pixels are arranged therein, a drain region formed adjacent to the first optical black region, the drain region discharging excess electrons generated in the active pixel region, and a second optical black region formed adjacent to the drain region, wherein another plurality of the shaded unit pixels are arranged therein.

Abstract translation: 图像传感器包括有源像素区域，其包括以矩阵图案排列的多个单位像素，与有源像素区域相邻形成的第一光学黑色区域，其中布置有多个阴影单位像素，相邻形成的漏极区域 在第一光学黑色区域中，排出在有源像素区域中产生的多余电子的漏极区域和与漏极区域相邻形成的第二光学黑色区域，其中多个阴影单位像素被布置在其中。

公开(公告)号：US20080105908A1

公开(公告)日：2008-05-08

申请号：US11982925

申请日：2007-11-06

Applicant: Jun-taek Lee

Inventor： Jun-taek Lee

IPC: H01L31/0232 ,  H01L31/18

CPC classification number: H01L27/14623 ,  H01L27/14609 ,  H01L27/14632 ,  H01L27/14687

Abstract: An image sensor and a method of forming the same includes a semiconductor substrate including a light receiving area and an optical black area defined by a boundary between them; photodiodes in at least one of the light receiving area and the optical black area of the semiconductor substrate; an interlayer dielectric provided on the semiconductor substrate; an upper light shielding pattern on the interlayer dielectric to cover the optical black area; and a light shielding pattern provided in the interlayer dielectric proximal to the boundary between the optical black area and the light receiving area.

Abstract translation: 图像传感器及其形成方法包括：半导体衬底，包括受光区域和由它们之间的边界限定的光学黑色区域; 在半导体衬底的光接收区域和光学黑色区域中的至少一个中的光电二极管; 设置在半导体衬底上的层间电介质; 覆盖光学黑色区域的层间电介质上的上部遮光图案; 以及设置在靠近光学黑色区域和光接收区域之间的边界的层间电介质中的遮光图案。

公开(公告)号：US20060175535A1

公开(公告)日：2006-08-10

申请号：US11333886

申请日：2006-01-18

Applicant: Sun-Yong Park ,  Jun-Taek Lee

Inventor： Sun-Yong Park ,  Jun-Taek Lee

IPC: H01L27/00

CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14818

Abstract: An image sensor comprises an active pixel region that includes a plurality of unit pixels arranged in a matrix pattern, a first optical black region formed adjacent to the active pixel region, wherein a plurality of shaded unit pixels are arranged therein, a drain region formed adjacent to the first optical black region, the drain region discharging excess electrons generated in the active pixel region, and a second optical black region formed adjacent to the drain region, wherein another plurality of the shaded unit pixels are arranged therein.

Abstract translation: 图像传感器包括有源像素区域，其包括以矩阵图案排列的多个单位像素，与有源像素区域相邻形成的第一光学黑色区域，其中布置有多个阴影单位像素，相邻形成的漏极区域 在第一光学黑色区域中，排出在有源像素区域中产生的多余电子的漏极区域和与漏极区域相邻形成的第二光学黑色区域，其中多个阴影单位像素被布置在其中。

公开(公告)号：US07990441B2

公开(公告)日：2011-08-02

申请号：US12004716

申请日：2007-12-21

Applicant: Jun-Taek Lee

Inventor： Jun-Taek Lee

IPC: H04N9/64

CPC classification number: H04N5/361 ,  H04N5/357 ,  H04N5/374 ,  H04N5/376

Abstract: A method for driving an image sensor includes the steps of: sensing temperature from the image sensor; selecting a voltage level of a control signal in accordance with the sensed temperature; and detecting an image in response to the control signal having the selected voltage level. An image sensor comprises a temperature sensor configured to sense a temperature of the image sensor and a pixel array configured to detect an image in response to a control signal, wherein the control signal varies in voltage level as a function of the sensed temperature.

Abstract translation: 一种用于驱动图像传感器的方法包括以下步骤：感测来自图像传感器的温度; 根据感测到的温度选择控制信号的电压电平; 以及响应于具有所选择的电压电平的控制信号来检测图像。 图像传感器包括被配置为感测图像传感器的温度的温度传感器和被配置为响应于控制信号检测图像的像素阵列，其中控制信号作为感测温度的函数在电压电平上变化。

公开(公告)号：US20100155797A1

公开(公告)日：2010-06-24

申请号：US12654234

申请日：2009-12-15

Applicant: Jun-Taek Lee ,  Jun-Pyo Ko ,  Ji-Hoon Jung ,  Myoung-Bae Won

Inventor： Jun-Taek Lee ,  Jun-Pyo Ko ,  Ji-Hoon Jung ,  Myoung-Bae Won

IPC: H01L31/112 ,  H01L31/0232

CPC classification number: H01L27/14636 ,  H01L27/14609 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14689

Abstract: CMOS image sensors and methods of manufacturing the same are provided, the CMOS image sensors include an epitaxial layer, a photodiode, a transfer transistor, CMOS transistors, first metal wirings and a second metal wiring formed on a substrate. The substrate may have a photodiode region, a floating diffusion region, an active pixel sensor (APS) array circuit region and a peripheral circuit region. The photodiode may be formed on the epitaxial layer in the photodiode region. The transfer transistor may be formed on the epitaxial layer in the floating diffusion region. The CMOS transistors may be formed on the epitaxial layer in the APS array circuit region and the peripheral circuit region. The first metal wirings may be formed over the photodiode region. The second metal wiring may be formed on one of the first metal wirings. The second metal wiring may be located higher than the first metal wirings.

Abstract translation: 提供CMOS图像传感器及其制造方法，CMOS图像传感器包括外延层，光电二极管，转移晶体管，CMOS晶体管，第一金属布线和形成在基板上的第二金属布线。 衬底可以具有光电二极管区域，浮动扩散区域，有源像素传感器（APS）阵列电路区域和外围电路区域。 光电二极管可以形成在光电二极管区域的外延层上。 转移晶体管可以形成在浮动扩散区域中的外延层上。 CMOS晶体管可以形成在APS阵列电路区域和外围电路区域的外延层上。 第一金属布线可以形成在光电二极管区域上。 第二金属布线可以形成在第一金属布线之一上。 第二金属布线可以位于比第一金属布线更高的位置。