公开(公告)号：US6090211A

公开(公告)日：2000-07-18

申请号：US820390

申请日：1997-03-12

申请人： Hidenori Kamei ,  Hidemi Takeishi ,  Yasunari Oku

发明人： Hidenori Kamei ,  Hidemi Takeishi ,  Yasunari Oku

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C30B25/14 ,  C23C16/00

CPC分类号： C23C16/45574 ,  C23C16/4584 ,  C30B25/14

摘要： A method and apparatus for forming a semiconductor thin layer on a substrate surface employs a gas outlet for supplying gas to the substrate, a rotatable holder for holding the substrate thereon such that a surface of the substrate is exposed to the gas while the substrate orbits with rotation of the holder, and a heater generates and supplies heat energy to the substrate. A cover wall extends over the surface of the substrate which is exposed to the gas. A distance between the exposed surface of the substrate and the cover wall in a direction parallel to a rotational axis of the rotatable holder decreases radially outward over the substrate orbiting with rotation of the holder about a rotational axis of the holder.

摘要翻译： 用于在基板表面上形成半导体薄层的方法和装置采用用于向基板供应气体的气体出口，用于将基板保持在其上的可旋转保持器，使得基板的表面暴露于气体，同时基板以 保持器的旋转和加热器产生并向基板提供热能。 覆盖壁在衬底的暴露于气体的表面上延伸。 基板的暴露表面和盖壁之间的距离可以平行于旋转保持器的旋转轴线的方向径向向外延伸，在保持器围绕保持器的旋转轴线的旋转的作用下轨道运动。

公开(公告)号：US06307219B1

公开(公告)日：2001-10-23

申请号：US09318472

申请日：1999-05-25

申请人： Yasunari Oku ,  Hidenori Kamei

发明人： Yasunari Oku ,  Hidenori Kamei

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01S5/34333

摘要： An n-type clad layer, a light-emitting layer, a p-type clad layer of gallium-nitride-group compound semiconductor are stacked on a substrate in the order. The composition distribution of gallium-nitride-group compound semiconductor forming the p-type clad layer is varied in the direction of layer thickness at a substantially continuous change rate, or it is varied in change rate of the stepping mode, so as the forbidden band width gradually decreases along with an increasing distance from the light-emitting layer. With the above-described structure, the operating voltage is lowered, while the luminous efficiency is improved.

摘要翻译： 在衬底上依次层叠n型覆盖层，发光层，氮化镓族化合物半导体的p型覆盖层。 形成p型覆盖层的氮化镓族化合物半导体的组成分布以大致连续的变化率在层厚方向上变化，或者随着步进模式的变化率而变化，因此禁带 随着与发光层的距离的增加，宽度逐渐减小。 利用上述结构，降低了工作电压，同时提高了发光效率。

公开(公告)号：US07002184B2

公开(公告)日：2006-02-21

申请号：US11022801

申请日：2004-12-28

申请人： Yasunari Oku ,  Hidenori Kamei

发明人： Yasunari Oku ,  Hidenori Kamei

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01S5/34333

摘要： In the light-emitting gallium-nitride-group compound semiconductor devices using a substrate, the operating voltage is lowered and at the same time the occurrence of crack during crystal growth is suppressed, resulting in an improved manufacturing yield rate. The device includes a stacked structure of an n-type layer, a light-emitting layer and a p-type layer formed in the foregoing order on a substrate, and an n-side electrode formed on the surface of the n-type layer. The n-type layer is a laminate layer composed of, in the order from the substrate, first n-type layer and a second n-type layer having a carrier concentration higher than that of the first n-type layer. As the contact resistance between the n-type layer and the n-side electrode formed thereon is reduced, the operating voltage of a light-emitting device is lowered, and the power consumption decreased.

摘要翻译： 在使用基板的发光氮化镓族化合物半导体器件中，工作电压降低，同时抑制了晶体生长期间的裂纹的发生，从而提高了制造成品率。 该装置包括在基板上以上述顺序形成的n型层，发光层和p型层的层叠结构，以及形成在n型层的表面上的n侧电极。 n型层是以从衬底的顺序构成第一n型层和具有比第一n型层的载流子浓度高的载流子浓度的第二n型层的层叠层。 随着形成在其上的n型层和n侧电极之间的接触电阻减小，发光器件的工作电压降低，功耗降低。

公开(公告)号：US20050121681A1

公开(公告)日：2005-06-09

申请号：US11022801

申请日：2004-12-28

申请人： Yasunari Oku ,  Hidenori Kamei

发明人： Yasunari Oku ,  Hidenori Kamei

IPC分类号： H01L33/32 ,  H01S5/343 ,  H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01S5/34333

摘要： In the light-emitting gallium-nitride-group compound semiconductor devices using a substrate, the operating voltage is lowered and at the same time the occurrence of crack during crystal growth is suppressed, resulting in an improved manufacturing yield rate. The device includes a stacked structure of an n-type layer, a light-emitting layer and a p-type layer formed in the foregoing order on a substrate, and an n-side electrode formed on the surface of the n-type layer. The n-type layer is a laminate layer composed of, in the order from the substrate, first n-type layer and a second n-type layer having a carrier concentration higher than that of the first n-type layer. As the contact resistance between the n-type layer and the n-side electrode formed thereon is reduced, the operating voltage of a light-emitting device is lowered, and the power consumption decreased.

公开(公告)号：US06497944B1

公开(公告)日：2002-12-24

申请号：US09219428

申请日：1998-12-23

申请人： Yasunari Oku ,  Hidenori Kamei

发明人： Yasunari Oku ,  Hidenori Kamei

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01S5/34333 ,  Y10S428/917 ,  Y10T428/24942 ,  Y10T428/2495

摘要： In the light-emitting gallium-nitride-group compound semiconductor devices using an insulating substrate, the operating voltage is lowered and at the same time the occurrence of cracks during crystal growth is suppressed, resulting in an improved manufacturing yield rate. The device includes a stacked structure of an n-type layer, a light-emitting layer and a p-type layer formed in the foregoing order on an insulating substrate, and an n-side electrode formed on the surface of the n-type layer. The n-type layer is a laminate layer composed of, in the order from the substrate, a first n-type layer and a second n-type layer having a carrier concentration higher than that of the first n-type layer. As the contact resistance between the n-type layer and the n-side electrode formed thereon is reduced, the operating voltage of a light-emitting device is lowered, and the power consumption decreased.

摘要翻译： 在使用绝缘性基板的发光氮化镓系化合物半导体装置中，工作电压降低，同时抑制了晶体生长期间的裂纹的发生，提高了制造成品率。 该装置包括在绝缘基板上以上述顺序形成的n型层，发光层和p型层的层叠结构，以及形成在n型层的表面上的n侧电极 。 n型层是以从衬底的顺序构成具有比第一n型层的载流子浓度高的载流子浓度的第一n型层和第二n型层的层叠层。 随着形成在其上的n型层和n侧电极之间的接触电阻减小，发光器件的工作电压降低，功耗降低。

公开(公告)号：US06445127B1

公开(公告)日：2002-09-03

申请号：US09250732

申请日：1999-02-16

申请人： Yasunari Oku ,  Hidenori Kamei

发明人： Yasunari Oku ,  Hidenori Kamei

IPC分类号： H01J162

CPC分类号： H01L33/32 ,  H01L33/0012

摘要： A gallium-nitride-group compound-semiconductor light-emitting device having an improved luminous intensity that makes it more suitable for use in the full-color outdoor display of an advanced performance. A gallium-nitride-group compound-semiconductor light-emitting device comprising an n-type layer 3, a light-emitting layer 4 and p-type layers 5, 6, the light-emitting layer 4 is doped with a p-type impurity, Mg for example, in a certain specific concentration, so a pn junction is formed within the light-emitting layer 4 and a light emission caused by the electron transition between conduction band and valence band is obtained. In a GaN group compound-semiconductor light-emitting device comprising at least an n-type clad layer 3, a p-type clad layer 5 and a light-emitting layer formed in between the clad layers 3, 5, stacked on a substrate 1. The light-emitting layer 4 is structured as a substance of stacked layers including an n-type layer 41 and a p-type layer 42, or these layers plus an i-type layer formed in between the layers 41 and 42, so a pn junction is formed within the light-emitting layer 4 itself. The injection of electrons and holes into the light-emitting layer 4 is expedited and the luminous intensity of the light-emitting layer 4 is increased.

摘要翻译： 具有改善的发光强度的氮化镓族化合物半导体发光器件，使其更适用于高级性能的全色室外显示器。 包含n型层3，发光层4和p型层5,6的氮化镓族化合物半导体发光器件，发光层4掺杂有p型杂质 ，例如Mg，在一定的浓度下，因此在发光层4内形成pn结，获得由导带和价带之间的电子跃迁引起的发光。 在包括至少n型覆盖层3，p型覆盖层5和形成在覆盖层3,5之间的发光层的GaN族化合物半导体发光器件中，层叠在基板1上 发光层4被构造为包括n型层41和p型层42的堆叠层的物质，或这些层加上形成在层41和42之间的i型层，因此 pn结形成在发光层4本身内。 电子和空穴注入发光层4的加速，并且发光层4的发光强度增加。

公开(公告)号：US06841800B2

公开(公告)日：2005-01-11

申请号：US10299065

申请日：2002-11-19

申请人： Yasunari Oku ,  Hidenori Kamei

发明人： Yasunari Oku ,  Hidenori Kamei

IPC分类号： H01L33/32 ,  H01S5/343 ,  H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01S5/34333

摘要： In the light-emitting gallium-nitride-group compound semiconductor devices using a substrate, the operating voltage is lowered and at the same time the occurrence of crack during crystal growth is suppressed, resulting in an improved manufacturing yield rate. The device includes a stacked structure of an n-type layer, a light-emitting layer and a p-type layer formed in the foregoing order on a substrate, and an n-side electrode formed on the surface of the n-type layer. The n-type layer is a laminate layer composed of, in the order from the substrate, first n-type layer and a second n-type layer having a carrier concentration higher than that of the first n-type layer. As the contact resistance between the n-type layer and the n-side electrode formed thereon is reduced, the operating voltage of a light-emitting device is lowered, and the power consumption decreased.

摘要翻译： 在使用基板的发光氮化镓族化合物半导体器件中，工作电压降低，同时抑制了晶体生长期间的裂纹的发生，从而提高了制造成品率。 该装置包括在基板上以上述顺序形成的n型层，发光层和p型层的层叠结构，以及形成在n型层的表面上的n侧电极。 n型层是以从衬底的顺序构成第一n型层和具有比第一n型层的载流子浓度高的载流子浓度的第二n型层的层叠层。 随着形成在其上的n型层和n侧电极之间的接触电阻减小，发光器件的工作电压降低，功耗降低。

公开(公告)号：US6051847A

公开(公告)日：2000-04-18

申请号：US69849

申请日：1998-04-30

申请人： Yasunari Oku ,  Hidemi Takeishi ,  Hidenori Kamei ,  Shuuichi Shinagawa

发明人： Yasunari Oku ,  Hidemi Takeishi ,  Hidenori Kamei ,  Shuuichi Shinagawa

IPC分类号： H01L33/00 ,  H01L33/32

CPC分类号： H01L33/32 ,  H01L33/007

摘要： In the present invention, by organometallic vapor deposition, a buffer layer containing indium is grown on a substrate and an n-type gallium nitride compound-based semiconductor thin film containing indium is grown on the buffer layer. Thus, the occurrence of distortion and crystal defects in the vicinity of the boundary surface between the buffer layer and the n-type gallium nitride compound-based semiconductor thin film is reduced, so that the gallium nitride compound-based semiconductor thin film having an excellent crystallinity can be obtained.As a gallium nitride compound-based semiconductor light emitting device using gallium nitride compound-based semiconductor thin films which has excellent light-emitting properties, there can be obtained a gallium nitride compound-based semiconductor light emitting device comprising a substrate, a buffer layer of Al.sub.1-x In.sub.x N (0

摘要翻译： 在本发明中，通过有机金属蒸镀，在衬底上生长含有铟的缓冲层，在缓冲层上生长含有铟的n型氮化镓系化合物系半导体薄膜。 因此，缓冲层和n型氮化镓系化合物系半导体薄膜之间的边界面附近的失真和晶体缺陷的发生减少，使得具有优异的氮化镓系化合物系半导体薄膜 可以得到结晶度。 作为使用具有优异发光特性的氮化镓系化合物系半导体薄膜的氮化镓系化合物系半导体发光元件，可以得到基于氮化镓系化合物的半导体发光元件，其包含：基板， 形成在基板上的Al1-xInxN（0