摘要:
A sensor chip breaking strength inspection apparatus that performs sensor chip breaking strength inspection on a semiconductor wafer on which a plurality of sensor chips having a diaphragm portion are disposed includes: a stage on which the semiconductor wafer is mounted; and a nozzle that emits a medium onto the sensor chips at a pressure equivalent to a standard breaking strength of the sensor chips.
摘要:
A dispersion plating method in which plating is conducted while plating liquid containing both abrasive grains of a size larger than 10 .mu.m and another grains is brought into contact with the surface of an object to be plated, the latter grains then being removed by washing with water with only abrasive grains being entrapped in a metal matrix. Plating liquid is circulated through a filter of a filtering size smaller than the average grain size of abrasive grains and the abrasive grains are made into a flocculating condition and adhered to the surface of object to be plated. Furthermore, abrasive grains are adhered to the surface of object to be plated in a plating thickness of less than one half of average grain size of abrasive grains.
摘要:
A sensor chip breaking strength inspection apparatus that performs sensor chip breaking strength inspection on a semiconductor wafer on which a plurality of sensor chips having a diaphragm portion are disposed includes: a stage on which the semiconductor wafer is mounted; and a nozzle that emits a medium onto the sensor chips at a pressure equivalent to a standard breaking strength of the sensor chips.
摘要:
A cleaning method to inhibit the adhesion of micro particles to a member to be cleaned by decreasing an amount of generation of bubbles. In a method for cleaning a member to be cleaned by dipping the member into a cleaning bath to which a hydrochloric acid-hydrogen peroxide mixture comprising hydrochloric acid, hydrogen peroxide and water is supplied through a filter and a supplying port; the improvement is that a temperature of the hydrochloric acid, hydrogen peroxide mixture is controlled within the range of 20°to 45° C.