公开(公告)号：US20070279242A1

公开(公告)日：2007-12-06

申请号：US11447376

申请日：2006-06-06

申请人： Thomas A. Plocher ,  Janet JZX Jin ,  Foong Yeen Chan ,  Qing Li

发明人： Thomas A. Plocher ,  Janet JZX Jin ,  Foong Yeen Chan ,  Qing Li

IPC分类号： G08B25/08 ,  H05B39/00

CPC分类号： A62B5/00 ,  A62B99/00 ,  G08B3/10 ,  G08B7/066

摘要： A plurality of directional sounders located in a region being monitored can be synchronously and sequentially activated in various patterns to establish an audibly defined exit route from the region. Emitted audio, from a respective sounder, can be different than the audio emitted by other activated sounders to provide a path and direction for evacuation to individuals in the vicinity of the exit route.

摘要翻译： 位于被监视区域中的多个定向探测器可以以各种模式同步并顺序地激活，以建立从该区域的可听定义的出口路线。 从相应的发声器发出的音频可以不同于其他激活的发声器发出的音频，以提供撤离出口路线附近的个人的路径和方向。

公开(公告)号：US20050208712A1

公开(公告)日：2005-09-22

申请号：US11128010

申请日：2005-05-12

申请人： Yeen Chan ,  Kheng Tee ,  Yiang Nga ,  Zhao Lun ,  Wang Goh ,  Diing Ang

发明人： Yeen Chan ,  Kheng Tee ,  Yiang Nga ,  Zhao Lun ,  Wang Goh ,  Diing Ang

IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L29/66772 ,  H01L29/78615

摘要： A MOSFET device structure formed on a silicon on insulator layer, and a process sequence employed to fabricate said MOSFET device structure, has been developed. The process features insulator filled, shallow trench isolation (STI) regions formed in specific locations of the MOSFET device structure for purposes of reducing the risk of parasitic transistor formation underlying a gate structure junction. After formation of either a “T” shaped, or an “H” shaped gate structure, body contact regions of a first conductivity type are formed adjacent to both an STI region and to a component of the gate structure. Formation of a source/drain region of a second conductivity type located on the opposite side of the same STI region, and the same gate structure component, is next performed. Unwanted parasitic transistor formation, which can occur underlying the gate structure via the body contact region and the source/drain region, is prevented by the presence of the separating STI region.

公开(公告)号：US20050023608A1

公开(公告)日：2005-02-03

申请号：US10628913

申请日：2003-07-29

申请人： Yeen Chan ,  Kheng Tee ,  Yiang Nga ,  Zhao Lun ,  Wang Goh ,  Diing Ang

发明人： Yeen Chan ,  Kheng Tee ,  Yiang Nga ,  Zhao Lun ,  Wang Goh ,  Diing Ang

IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L21/84 ,  H01L27/12

CPC分类号： H01L29/66772 ,  H01L29/78615

摘要： A MOSFET device structure formed on a silicon on insulator layer, and a process sequence employed to fabricate said MOSFET device structure, has been developed. The process features insulator filled, shallow trench isolation (STI) regions formed in specific locations of the MOSFET device structure for purposes of reducing the risk of parasitic transistor formation underlying a gate structure junction. After formation of either a “T” shaped, or an “H” shaped gate structure, body contact regions of a first conductivity type are formed adjacent to both an STI region and to a component of the gate structure. Formation of a source/drain region of a second conductivity type located on the opposite side of the same STI region, and the same gate structure component, is next performed. Unwanted parasitic transistor formation, which can occur underlying the gate structure via the body contact region and the source/drain region, is prevented by the presence of the separating STI region.

公开(公告)号：US06467278B1

公开(公告)日：2002-10-22

申请号：US09714369

申请日：2000-11-15

申请人： Ah Lek Hu ,  Sharon Mei Wan Ko ,  Peng Yeen Chan

发明人： Ah Lek Hu ,  Sharon Mei Wan Ko ,  Peng Yeen Chan

IPC分类号： F25D1702

CPC分类号： H01L21/67092 ,  B28D5/0076 ,  H01L21/56 ,  H01L24/97 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/14 ,  H01L2924/181 ,  Y10T83/293 ,  H01L2924/00 ,  H01L2924/00012

摘要： A cooling system to reduce damage resulting from panel singulation is provided. A panel may be formed by encapsulating a lead frame with mounted dice. The encapsulating material may be a composite, plastic, or ceramic. Singulation may be a cutting done by laser, water jet, or saw. A chiller system cools a fluid, such as water, to a temperature below 16° C. The cooled fluid is dispensed to a part of the panel being singulated. For example, if a circular saw is used to cut the panel, a plurality of nozzles may be used to direct the fluid to the part of the saw cutting the panel, which defines the part of the panel being singulated. The cooled fluid, cools the panel preventing burring, smearing, and melting of metal contacts.

摘要翻译： 提供了一种用于减少由面板切割引起的损坏的冷却系统。 可以通过用安装的骰子封装引线框架来形成面板。 封装材料可以是复合材料，塑料或陶瓷。 可以通过激光，水射流或锯切来进行切割。 冷却器系统将诸如水的流体冷却至低于16℃的温度。冷却的流体被分配到被切割的面板的一部分。 例如，如果使用圆锯来切割面板，则可以使用多个喷嘴将流体引导到切割面板的锯的部分，其限定面板的被切割的部分。 冷却的流体冷却面板，防止金属触点的毛刺，拖尾和熔化。

公开(公告)号：US07629894B2

公开(公告)日：2009-12-08

申请号：US11447376

申请日：2006-06-06

申请人： Thomas A. Plocher ,  Janet J Z X Jin ,  Foong Yeen Chan ,  Qing Li

发明人： Thomas A. Plocher ,  Janet J Z X Jin ,  Foong Yeen Chan ,  Qing Li

IPC分类号： G08B25/08 ,  H05B39/00 ,  H04R27/00

CPC分类号： A62B5/00 ,  A62B99/00 ,  G08B3/10 ,  G08B7/066

摘要： A plurality of directional sounders located in a region being monitored can be synchronously and sequentially activated in various patterns to establish an audibly defined exit route from the region. Emitted audio, from a respective sounder, can be different than the audio emitted by other activated sounders to provide a path and direction for evacuation to individuals in the vicinity of the exit route.

摘要翻译： 位于被监视区域中的多个定向探测器可以以各种模式同步并顺序地激活，以建立从该区域的可听定义的出口路线。 从相应的发声器发出的音频可以不同于其他激活的发声器发出的音频，以提供撤离出口路线附近的个人的路径和方向。

公开(公告)号：US07181835B2

公开(公告)日：2007-02-27

申请号：US10759989

申请日：2004-01-15

申请人： Ah Lek Hu ,  Sharon Mei Wan Ko ,  Peng Yeen Chan ,  Jaime Bayan

发明人： Ah Lek Hu ,  Sharon Mei Wan Ko ,  Peng Yeen Chan ,  Jaime Bayan

IPC分类号： H05K3/30

CPC分类号： H01L21/6835 ,  H01L21/67144 ,  H01L21/6838 ,  Y10T29/49117 ,  Y10T29/49121 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/53174 ,  Y10T29/53191

摘要： A method is provided for processing a lead frame. Generally, a first surface of a lead frame base tape is placed on a first surface of the lead frame. A second surface of the lead frame base tape is placed on a first surface of a porous block. A vacuum is placed on a second surface of the porous block. A device for processing lead frames comprises a porous block with a first side and a second side, and a vacuum system connected to the first side of the porous block. The device may also include devices for attaching chips to the lead frame and wire bonding the chips to the lead frame.

摘要翻译： 提供了一种用于处理引线框架的方法。 通常，引线框架基带的第一表面被放置在引线框架的第一表面上。 引线框架基带的第二表面放置在多孔块的第一表面上。 在多孔块的第二表面上放置真空。 用于处理引线框架的装置包括具有第一侧和第二侧的多孔块，以及连接到多孔块的第一侧的真空系统。 该装置还可以包括用于将芯片附接到引线框架并将芯片引线接合到引线框架的装置。

公开(公告)号：US06698088B2

公开(公告)日：2004-03-02

申请号：US09776287

申请日：2001-02-01

申请人： Ah Lek Hu ,  Sharon Mei Wan Ko ,  Peng Yeen Chan ,  Jaime Bayan

发明人： Ah Lek Hu ,  Sharon Mei Wan Ko ,  Peng Yeen Chan ,  Jaime Bayan

IPC分类号： B23P1900

CPC分类号： H01L21/6835 ,  H01L21/67144 ,  H01L21/6838 ,  Y10T29/49117 ,  Y10T29/49121 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/53174 ,  Y10T29/53191

摘要： A method is provided for processing a lead frame. Generally, a first surface of a lead frame base tape is placed on a first surface of the lead frame. A second surface of the lead frame base tape is placed on a first surface of a porous block. A vacuum is placed on a second surface of the porous block. A device for processing lead frames comprises a porous block with a first side and a second side, and a vacuum system connected to the first side of the porous block. The device may also include devices for attaching chips to the lead frame and wire bonding the chips to the lead frame.

摘要翻译： 提供了一种用于处理引线框架的方法。 通常，引线框架基带的第一表面被放置在引线框架的第一表面上。 引线框架基带的第二表面放置在多孔块的第一表面上。 在多孔块的第二表面上放置真空。 用于处理引线框架的装置包括具有第一侧和第二侧的多孔块，以及连接到多孔块的第一侧的真空系统。 该装置还可以包括用于将芯片附接到引线框架并将芯片引线接合到引线框架的装置。