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    Compound semiconductor substrate comprising a multilayer buffer layer
    1.
    发明授权
    Compound semiconductor substrate comprising a multilayer buffer layer 有权
    化合物半导体衬底包括多层缓冲层

    公开(公告)号：US08212288B2

    公开(公告)日：2012-07-03

    申请号：US12879035

    申请日：2010-09-10

    申请人： Jun Komiyama ,  Kenichi Eriguchi ,  Hiroshi Oishi ,  Yoshihisa Abe ,  Akira Yoshida ,  Shunichi Suzuki

    发明人： Jun Komiyama ,  Kenichi Eriguchi ,  Hiroshi Oishi ,  Yoshihisa Abe ,  Akira Yoshida ,  Shunichi Suzuki

    IPC分类号： H01L21/02

    CPC分类号： H01L21/0254 ,  H01L21/02458 ,  H01L21/02507

    摘要： A compound semiconductor substrate which inhibits the generation of a crack or a warp and is preferable for a normally-off type high breakdown voltage device, arranged that a multilayer buffer layer 2 in which AlxGa1-xN single crystal layers (0.6≦X≦1.0) 21 containing carbon from 1×1018 atoms/cm3 to 1×1021 atoms/cm3 and AlyGa1-yN single crystal layers (0.1≦y≦0.5) 22 containing carbon from 1×1017 atoms/cm3 to 1×1021 atoms/cm3 are alternately and repeatedly stacked in order, and a nitride active layer 3 provided with an electron transport layer 31 having a carbon concentration of 5×1017 atoms/cm3 or less and an electron supply layer 32 are deposited on a Si single crystal substrate 1 in order. The carbon concentrations of the AlxGa1-xN single crystal layers 21 and that of the AlGa1-yN single crystal layers 22 respectively decrease from the substrate 1 side towards the above-mentioned active layer 3 side. In this way, the compound semiconductor substrate is produced.

    摘要翻译： 一种禁止产生裂纹或翘曲的化合物半导体衬底，优选用于常闭型高击穿电压器件，其中AlxGa1-xN单晶层（0.6＆amp; NlE; X＆amp; NlE; 1.0 ）含有1×1018原子/ cm 3至1×1021原子/ cm3的碳和含有1×10 17原子/ cm 3至1×1021原子/ cm 3的碳的Al y Ga 1-y N单晶层（0.1＆lt; 1lE; y＆nlE; 0.5） 交替重复堆叠，并且在Si单晶衬底1上沉积具有碳浓度为5×10 17原子/ cm 3以下的电子传输层31和电子供给层32的氮化物活性层3 订购。 Al x Ga 1-x N单晶层21和AlGa1-yN单晶层22的碳浓度分别从衬底1侧朝向上述有源层3侧减小。 以这种方式制造化合物半导体衬底。

    Nitride semiconductor substrate and method of manufacturing the same
    3.
    发明授权
    Nitride semiconductor substrate and method of manufacturing the same 有权
    氮化物半导体衬底及其制造方法

    公开(公告)号：US08785942B2

    公开(公告)日：2014-07-22

    申请号：US13352987

    申请日：2012-01-18

    申请人： Akira Yoshida ,  Jun Komiyama ,  Yoshihisa Abe ,  Hiroshi Oishi ,  Kenichi Eriguchi ,  Shunichi Suzuki

    发明人： Akira Yoshida ,  Jun Komiyama ,  Yoshihisa Abe ,  Hiroshi Oishi ,  Kenichi Eriguchi ,  Shunichi Suzuki

    IPC分类号： H01L29/15

    CPC分类号： H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/7787

    摘要： A nitride semiconductor substrate suitable for a normally-off type high breakdown-voltage device and a method of manufacturing the substrate are provided allowing both a higher threshold voltage and improvement in current collapse.In a nitride semiconductor substrate 10 having a substrate 1, a buffer layer 2 formed on one principal plane of the substrate 1, an intermediate layer 3 formed on the buffer layer 2, an electron transport layer 4 formed on the intermediate layer 3, and an electron supply layer 5 formed on the electron transport layer 4, the intermediate layer 3 has a thickness of 200 nm to 1500 nm and a carbon concentration of 5×1016 atoms/cm3 to 1×1018 atoms/cm3 and is of AlxGa1-xN (0.05≦x≦0.24), and the electron transport layer 4 has a thickness of 5 nm to 200 nm and is of AlyGa1-yN (0≦y≦0.04).

    摘要翻译： 提供了适用于常关型高击穿电压装置的氮化物半导体衬底和制造衬底的方法，其允许更高的阈值电压和电流崩溃的改善。 在具有衬底1的氮化物半导体衬底10中，形成在衬底1的一个主平面上的缓冲层2，形成在缓冲层2上的中间层3，形成在中间层3上的电子传输层4和 形成在电子输送层4上的电子供给层5，中间层3的厚度为200nm〜1500nm，碳浓度为5×1016原子/ cm3〜1×1018原子/ cm3，为AlxGa1-xN（ 0.05＆nlE; x＆lt; L; 0.24），电子传输层4的厚度为5nm〜200nm，为Al y Ga 1-y N（0＆nl E; y＆nlE; 0.04）。

    NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
    氮化物半导体衬底及其制造方法

    公开(公告)号：US20120211763A1

    公开(公告)日：2012-08-23

    申请号：US13352987

    申请日：2012-01-18

    申请人： Akira Yoshida ,  Jun Komiyama ,  Yoshihisa Abe ,  Hiroshi Oishi ,  Kenichi Eriguchi ,  Shunichi Suzuki

    发明人： Akira Yoshida ,  Jun Komiyama ,  Yoshihisa Abe ,  Hiroshi Oishi ,  Kenichi Eriguchi ,  Shunichi Suzuki

    IPC分类号： H01L29/20 ,  H01L21/20

    CPC分类号： H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/7787

    摘要： A nitride semiconductor substrate suitable for a normally-off type high breakdown-voltage device and a method of manufacturing the substrate are provided allowing both a higher threshold voltage and improvement in current collapse.In a nitride semiconductor substrate 10 having a substrate 1, a buffer layer 2 formed on one principal plane of the substrate 1, an intermediate layer 3 formed on the buffer layer 2, an electron transport layer 4 formed on the intermediate layer 3, and an electron supply layer 5 formed on the electron transport layer 4, the intermediate layer 3 has a thickness of 200 nm to 1500 nm and a carbon concentration of 5×1016 atoms/cm3 to 1×1018 atoms/cm3 and is of AlxGa1-xN (0.05≦x≦0.24), and the electron transport layer 4 has a thickness of 5 nm to 200 nm and is of AlyGa1-yN (0≦y≦0.04).

    摘要翻译： 提供了适用于常关型高击穿电压装置的氮化物半导体衬底和制造衬底的方法，其允许更高的阈值电压和电流崩溃的改善。 在具有衬底1的氮化物半导体衬底10中，形成在衬底1的一个主平面上的缓冲层2，形成在缓冲层2上的中间层3，形成在中间层3上的电子传输层4和 形成在电子输送层4上的电子供给层5，中间层3的厚度为200nm〜1500nm，碳浓度为5×1016原子/ cm3〜1×1018原子/ cm3，为AlxGa1-xN（ 0.05＆nlE; x＆lt; L; 0.24），电子传输层4的厚度为5nm〜200nm，为Al y Ga 1-y N（0＆nl E; y＆nlE; 0.04）。

    COMPOUND SEMICONDUCTOR SUBSTRATE
    6.
    发明申请
    COMPOUND SEMICONDUCTOR SUBSTRATE 审中-公开
    化合物半导体基板

    公开(公告)号：US20090065812A1

    公开(公告)日：2009-03-12

    申请号：US12204328

    申请日：2008-09-04

    申请人： Yoshihisa ABE ,  Jun Komiyama ,  Shunichi Suzuki ,  Hiroshi Oishi ,  Akira Yoshida ,  Hideo Nakanishi

    发明人： Yoshihisa ABE ,  Jun Komiyama ,  Shunichi Suzuki ,  Hiroshi Oishi ,  Akira Yoshida ,  Hideo Nakanishi

    IPC分类号： H01L29/205

    CPC分类号： H01L33/007 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/0254

    摘要： Provides is a compound semiconductor substrate about which the thickness of its nitride semiconductor single crystal layer can be made large while the generation of cracks, crystal defects or the like is restrained in the nitride semiconductor single crystal layer. The substrate has a first intermediate layer 110 formed on a Si single crystal substrate 100 having a crystal plane orientation of {111}. In the layer 110, a first metal compound layer 110a made of any one of TiC, TiN, VC and VN, and a second metal compound layer 110b made of any one of compounds which are different from the compound of the first metal compound layer out of TiC, TiN, VC and VN are laminated in this order alternately each other over the Si single crystal.

    摘要翻译： 提供了一种化合物半导体衬底，可以使氮化物半导体单晶层的厚度大得多，同时在氮化物半导体单晶层中抑制裂纹，晶体缺陷等的产生。 基板具有形成在晶体取向为{111}的Si单晶基板100上的第一中间层110。 在层110中，由TiC，TiN，VC和VN中的任一种制成的第一金属化合物层110a和由与第一金属化合物层的化合物不同的任何一种化合物制成的第二金属化合物层110b 的TiC，TiN，VC和VN以这种顺序层叠在Si单晶上。

    NITRIDE SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE
    7.
    发明申请
    NITRIDE SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE 审中-公开
    氮化物半导体单晶衬底

    公开(公告)号：US20080224268A1

    公开(公告)日：2008-09-18

    申请号：US12040020

    申请日：2008-02-29

    申请人： Yoshihisa Abe ,  Jun Komiyama ,  Shunichi Suzuki ,  Akira Yoshida ,  Hideo Nakanishi

    发明人： Yoshihisa Abe ,  Jun Komiyama ,  Shunichi Suzuki ,  Akira Yoshida ,  Hideo Nakanishi

    IPC分类号： H01L29/20

    CPC分类号： H01L29/2003 ,  C30B25/02 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/267 ,  H01L33/007 ,  H01S2304/04

    摘要： To provide a nitride semiconductor single crystal substrate comprising a Si substrate and a nitride semiconductor film which has semi-polar (10-1m) plane (m: natural number) and a thickness of 1 μm or more, the nitride semiconductor single crystal substrate being suitably used for a light-emitting device, the nitride semiconductor single crystal substrate being suitably used for a light-emitting device, this invention provides a nitride semiconductor single crystal substrate comprising a Si substrate having an off-cut angle of 1 to 35° in the direction from the direction, a buffer layer 2a (2b) made of at least one of SiC or BP formed on the Si substrate, a AlN buffer layer formed on the buffer layers, and a nitride semiconductor single crystal film formed on the AlN buffer layer, the nitride semiconductor single crystal film comprising any one of GaN (10-1m), AlN (10-1m), InN (10-1m) or a GaN (10-1m)/and AlN (10-1m) superlattice film.

    摘要翻译： 为了提供一种氮化物半导体单晶衬底，其包括Si衬底和具有半极性（10-1m）面（m：自然数）和1μm以上的厚度的氮化物半导体膜，氮化物半导体单晶衬底为 适合用于发光器件的氮化物半导体单晶衬底适合用于发光器件，本发明提供了一种氮化物半导体单晶衬底，其包括具有1至35°的截止角的Si衬底 从<100>方向的<110>方向，由在Si衬底上形成的SiC或BP中的至少一种制成的缓冲层2a（2b），形成在缓冲层上的AlN缓冲层，以及氮化物半导体 形成在AlN缓冲层上的单晶膜，包含GaN（10-1m），AlN（10-1m），InN（10-1m）或GaN（10-1m）中的任一种的氮化物半导体单晶膜和/ AlN（10-1m）超晶格膜。

    Substrate for growing electro-optical single crystal thin film and method of manufacturing the same
    9.
    发明申请
    Substrate for growing electro-optical single crystal thin film and method of manufacturing the same 失效
    用于生长电光单晶薄膜的基板及其制造方法

    公开(公告)号：US20060011941A1

    公开(公告)日：2006-01-19

    申请号：US11174610

    申请日：2005-07-06

    申请人： Yoshihisa Abe ,  Shunichi Suzuki ,  Hideo Nakanishi ,  Jun Komiyama

    发明人： Yoshihisa Abe ,  Shunichi Suzuki ,  Hideo Nakanishi ,  Jun Komiyama

    IPC分类号： H01L31/109

    CPC分类号： G02F1/03

    摘要： A substrate 1 for growing an electro-optical single crystal thin film in which two or more layers of buffer layers 3, 4, and 5 for buffering lattice mismatch between Si and BTO are formed on an Si (001) substrate 2 is provided as a substrate for growing an electro-optical single crystal thin film which can obtain an electro-optical single crystal thin film of BTO single crystal thin film 6 etc. with a large size and a very high quality.

    摘要翻译： 在Si（001）基板2上形成用于生长用于缓冲Si和BTO之间的晶格失配的两层或多层缓冲层3,4和5的电光单晶薄膜的衬底1，作为 用于生长可以获得具有大尺寸和非常高质量的BTO单晶薄膜6等的电光单晶薄膜的电光单晶薄膜的基板。

    Substrate for compound semiconductor device and compound semiconductor device using the same
    10.
    发明申请
    Substrate for compound semiconductor device and compound semiconductor device using the same 审中-公开
    用于化合物半导体器件的衬底和使用其的化合物半导体器件

    公开(公告)号：US20070069216A1

    公开(公告)日：2007-03-29

    申请号：US11434115

    申请日：2006-05-16

    申请人： Jun Komiyama ,  Yoshihisa Abe ,  Shunichi Suzuki ,  Hideo Nakanishi

    发明人： Jun Komiyama ,  Yoshihisa Abe ,  Shunichi Suzuki ,  Hideo Nakanishi

    IPC分类号： H01L31/0312

    CPC分类号： H01L29/7787 ,  H01L29/2003

    摘要： A substrate for compound semiconductor device and a compound semiconductor device using the substrate are provided which allow a breakdown voltage to be high, cause little energy loss, and are suitably used for a high-electron mobility transistor etc. An n-type 3C—SiC single crystal buffer layer 3 having a carrier concentration of 1016-1021/cm3, a hexagonal GaxAl1-xN single crystal buffer layer (0≦x

    摘要翻译： 提供了一种化合物半导体器件的基板和使用该基板的化合物半导体器件，其允许击穿电压高，导致很少的能量损失，并且适合用于高电子迁移率晶体管等。n型3C-SiC 载流子浓度为10-16 / 21/3/3的单晶缓冲层3，六方晶系 > 1×1×N单晶缓冲层（0 <= x <1）4，n型六方晶系Al 1-y < 载流子浓度为10〜10/10/10/10以上的SUB> N单晶层（0.2 <= y <= 1）5 ，和n型六方晶系Al 1-z N单晶载体供给层（0≤z≤0.8,0.2≤yz≤1） ）6具有载流子浓度为10 11 -10 16 / cm 3的物质依次层叠在n型Si单晶衬底2上 具有晶面取向{111}和载体浓度为10 16 -10 21 / cm 3。 在上述基板2的背面形成有背面电极7，在上述载体供给层6的表面上形成有表面电极8。