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1.发明申请METHOD FOR FORMING PERIODIC STRUCTURE AND FUEL INJECTION SYSTEM HAVING THE PERIODIC STRUCTURE 审中-公开形成周期性结构的方法和具有周期性结构的燃油喷射系统公开(公告)号：US20110147493A1
公开(公告)日：2011-06-23
申请号：US12971570
申请日：2010-12-17
Applicant: Yoshihito MITSUOKA , Kazunori Suzuki , Yasuo Kitou , Sumitomo Inomata
Inventor： Yoshihito MITSUOKA , Kazunori Suzuki , Yasuo Kitou , Sumitomo Inomata
CPC classification number: B23K26/36 , B23K26/364 , B23K26/40 , B23K2103/50 , F02M51/0671 , F02M61/1853 , F02M2200/8069 , Y10T428/12389
Abstract: A method is for forming a periodic groove arrangement. According to the method, a base material made of metal is provided. Furthermore, the periodic groove arrangement, which includes a plurality of periodic grooves, is formed on a surface of the base material by irradiating and scanning the surface of the base material with a pulsed laser. A fuel injection system includes a nozzle hole forming part and the periodic groove arrangement formed by the method. The nozzle hole forming part includes a nozzle hole, which passes through the nozzle hole forming part and through which fuel is injected. The periodic groove arrangement is formed on an outer surface of the nozzle hole forming part.
Abstract translation: 一种用于形成周期性凹槽布置的方法。 根据该方法，提供由金属制成的基材。 此外，通过用脉冲激光照射和扫描基材的表面，在基材的表面上形成包括多个周期性凹槽的周期性凹槽布置。 燃料喷射系统包括喷嘴孔形成部分和通过该方法形成的周期槽布置。 喷嘴孔形成部分包括喷嘴孔，该喷嘴孔穿过喷嘴孔形成部分并且喷射燃料。 周期槽布置形成在喷嘴孔形成部分的外表面上。
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2.发明授权Formation method of water repellent layer and injector having water repellent layer 有权具有防水层的防水层和注射器的形成方法公开(公告)号：US08794548B2
公开(公告)日：2014-08-05
申请号：US12715751
申请日：2010-03-02
Applicant: Kazunori Suzuki , Susumu Sobue , Yoshihito Mitsuoka
Inventor： Kazunori Suzuki , Susumu Sobue , Yoshihito Mitsuoka
IPC: B05B1/30
CPC classification number: C23F4/00 , C23C14/165 , C23C14/5826 , F02M61/166 , F02M61/1806 , F02M61/1853 , F02M2200/9038
Abstract: A formation method for forming a water repellent layer on a surface of a metal substrate forms asperities on a surface of a metal basis material of the metal substrate by irradiating the metal basis material with plasma ions. The formation method forms an alloy from atoms of a metal of the metal basis material and the plasma ions. The formation method forms the asperities with portions of the metal basis material, which are not etched due to the alloy, and portions of the metal basis material, which are not alloyed but are etched. The formation method forms the water repellent layer by forming the asperities.
Abstract translation: 在金属基材的表面上形成防水层的形成方法通过用等离子体离子照射金属基材，在金属基材的金属基材的表面上形成凹凸。 形成方法由金属基材料的金属原子和等离子体离子形成合金。 形成方法形成了由于合金而未被蚀刻的金属基材的部分以及未合金化但被蚀刻的金属基材的部分的凹凸。 形成方法通过形成凹凸形成疏水层。
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3.发明授权公开(公告)号：US07365363B2
公开(公告)日：2008-04-29
申请号：US11108906
申请日：2005-04-19
Applicant: Jun Kojima , Takeshi Endo , Eiichi Okuno , Yoshihito Mitsuoka , Yoshiyuki Hisada , Hideo Matsuki
Inventor： Jun Kojima , Takeshi Endo , Eiichi Okuno , Yoshihito Mitsuoka , Yoshiyuki Hisada , Hideo Matsuki
IPC: H01L31/0312
CPC classification number: H01L29/66068 , H01L21/02024 , H01L29/045 , H01L29/513 , H01L29/517 , H01L29/7828
Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.
Abstract translation: 碳化硅半导体器件包括：具有主表面和背面的半导体衬底; 设置在主表面上的漂移层; 设置在漂移层上的基极区域; 设置在所述基底区域上的源极区域; 设置在所述漂移层和所述基极区域两者上的表面沟道层，用于在所述源极区域和所述漂移层之间连接; 栅极绝缘膜，设置在所述表面沟道层上并且包括高介电常数膜; 设置在所述栅极绝缘膜上的栅电极; 源电极，其设置在所述源极区域上; 以及设置在所述背面上的背面电极。
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Patent Agency Ranking
公开(公告)号：US07968892B2
公开(公告)日：2011-06-28
申请号：US11882137
申请日：2007-07-31
Applicant: Jun Kojima , Takeshi Endo , Eiichi Okuno , Yoshihito Mitsuoka , Yoshiyuki Hisada , Hideo Matsuki
Inventor： Jun Kojima , Takeshi Endo , Eiichi Okuno , Yoshihito Mitsuoka , Yoshiyuki Hisada , Hideo Matsuki
IPC: H01L31/0256
CPC classification number: H01L29/66068 , H01L21/02024 , H01L29/045 , H01L29/513 , H01L29/517 , H01L29/7828
Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.
Abstract translation: 碳化硅半导体器件包括：具有主表面和背面的半导体衬底; 设置在主表面上的漂移层; 设置在漂移层上的基极区域; 设置在所述基底区域上的源极区域; 设置在所述漂移层和所述基极区域两者上的表面沟道层，用于在所述源极区域和所述漂移层之间连接; 栅极绝缘膜，设置在所述表面沟道层上并且包括高介电常数膜; 设置在所述栅极绝缘膜上的栅电极; 源电极，其设置在所述源极区域上; 以及设置在所述背面上的背面电极。
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5.发明申请公开(公告)号：US20100224706A1
公开(公告)日：2010-09-09
申请号：US12715751
申请日：2010-03-02
Applicant: Kazunori SUZUKI , Susumu Sobue , Yoshihito Mitsuoka
Inventor： Kazunori SUZUKI , Susumu Sobue , Yoshihito Mitsuoka
CPC classification number: C23F4/00 , C23C14/165 , C23C14/5826 , F02M61/166 , F02M61/1806 , F02M61/1853 , F02M2200/9038
Abstract: A formation method for forming a water repellent layer on a surface of a metal substrate forms asperities on a surface of a metal basis material of the metal substrate by irradiating the metal basis material with plasma ions. The formation method forms an alloy from atoms of a metal of the metal basis material and the plasma ions. The formation method forms the asperities with portions of the metal basis material, which are not etched due to the alloy, and portions of the metal basis material, which are not alloyed but are etched. The formation method forms the water repellent layer by forming the asperities.
Abstract translation: 在金属基材的表面上形成防水层的形成方法通过用等离子体离子照射金属基材，在金属基材的金属基材的表面上形成凹凸。 形成方法从金属基材料的金属原子和等离子体离子形成合金。 形成方法形成具有由于合金而未被蚀刻的金属基材料的部分和不合金但被蚀刻的金属基材的部分的凹凸。 形成方法通过形成凹凸形成疏水层。
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公开(公告)号：US20070281173A1
公开(公告)日：2007-12-06
申请号：US11882137
申请日：2007-07-31
Applicant: Jun Kojima , Takeshi Endo , Eiichi Okuno , Yoshihito Mitsuoka , Yoshiyuki Hisada , Hideo Matsuki
Inventor： Jun Kojima , Takeshi Endo , Eiichi Okuno , Yoshihito Mitsuoka , Yoshiyuki Hisada , Hideo Matsuki
IPC: B32B9/04
CPC classification number: H01L29/66068 , H01L21/02024 , H01L29/045 , H01L29/513 , H01L29/517 , H01L29/7828
Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.
Abstract translation: 碳化硅半导体器件包括：具有主表面和背面的半导体衬底; 设置在主表面上的漂移层; 设置在漂移层上的基极区域; 设置在所述基底区域上的源极区域; 设置在所述漂移层和所述基极区域两者上的表面沟道层，用于在所述源极区域和所述漂移层之间连接; 栅极绝缘膜，设置在所述表面沟道层上并且包括高介电常数膜; 设置在所述栅极绝缘膜上的栅电极; 源电极，其设置在所述源极区域上; 以及设置在所述背面上的背面电极。
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7.发明授权公开(公告)号：US07045879B2
公开(公告)日：2006-05-16
申请号：US10744071
申请日：2003-12-24
Applicant: Yoshiyuki Hisada , Eiichi Okuno , Yoshihito Mitsuoka , Shinji Amano , Takeshi Endo , Shinichi Mukainakano , Ayahiko Ichimiya
Inventor： Yoshiyuki Hisada , Eiichi Okuno , Yoshihito Mitsuoka , Shinji Amano , Takeshi Endo , Shinichi Mukainakano , Ayahiko Ichimiya
IPC: H01L31/0312 , H01L31/036
CPC classification number: H01L29/7828 , H01L21/3247 , H01L29/045 , H01L29/1608 , H01L29/41766 , H01L29/66068 , H01L29/78 , H01L29/7802 , H01L29/7838
Abstract: The principal surface of a p-type SiC substrate (1) is formed of a face intersecting (0001) Si-face at 10 to 16°. An n+ source region (2) and an n+ drain region (3) are formed in a surface layer portion at the principal surface of the p-type SiC substrate (1) so as to be separated from each other. A gate electrode (5) is formed on a gate oxide film (4) on the principal surface of the p-type SiC substrate (1).
Abstract translation: p型SiC衬底（1）的主表面由10-16度的与（0001）Si面相交的面形成。 在p型SiC衬底的主表面上的表面层部分形成有n + +源极区（2）和n + +漏极区（3） 1）以便彼此分离。 栅极电极（5）形成在p型SiC衬底（1）的主表面上的栅氧化膜（4）上。
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8.发明申请公开(公告)号：US20050230686A1
公开(公告)日：2005-10-20
申请号：US11108906
申请日：2005-04-19
Applicant: Jun Kojima , Takeshi Endo , Eiichi Okuno , Yoshihito Mitsuoka , Yoshiyuki Hisada , Hideo Matsuki
Inventor： Jun Kojima , Takeshi Endo , Eiichi Okuno , Yoshihito Mitsuoka , Yoshiyuki Hisada , Hideo Matsuki
CPC classification number: H01L29/66068 , H01L21/02024 , H01L29/045 , H01L29/513 , H01L29/517 , H01L29/7828
Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.
Abstract translation: 碳化硅半导体器件包括：具有主表面和背面的半导体衬底; 设置在主表面上的漂移层; 设置在漂移层上的基极区域; 设置在所述基底区域上的源极区域; 设置在所述漂移层和所述基极区域两者上的表面沟道层，用于在所述源极区域和所述漂移层之间连接; 栅极绝缘膜，设置在所述表面沟道层上并且包括高介电常数膜; 设置在所述栅极绝缘膜上的栅电极; 源电极，其设置在所述源极区域上; 以及设置在所述背面上的背面电极。
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