公开(公告)号：US06475916B1

公开(公告)日：2002-11-05

申请号：US09483936

申请日：2000-01-18

申请人： James Yong Meng Lee ,  Yun Qiang Zhang ,  Chock Hing Gan ,  Ravi Sundaresan

发明人： James Yong Meng Lee ,  Yun Qiang Zhang ,  Chock Hing Gan ,  Ravi Sundaresan

IPC分类号： H01L21302

CPC分类号： H01L21/28238 ,  H01L21/28211 ,  H01L21/3185 ,  H01L29/66553 ,  H01L29/66583

摘要： A new method is provided for the creation of ultra-thin gate oxide layers. Under the first embodiment, sacrificial oxide and nitride are deposited, openings are created in the layer of nitride where the ultra-thin layer of gate oxide is to be created. A layer of poly is deposited over the layer of nitride. The layer of polysilicon is polished, leaving the poly deposited inside the openings. The nitride is removed leaving the gate structure in place overlying the grown gate oxide. Under the second embodiment, sacrificial oxide and nitride are deposited followed by the deposition of TEOS oxide. The layers of TEOS, oxide and nitride are patterned creating openings that expose the surface areas of the layer of sacrificial oxide where the ultra-thin layers of gate oxide are to be grown. A thin conformal layer of nitride is deposited over the structure, this thin layer of conformal nitride is etched to form thin spacers on the sidewalls of the openings in the layers of TEOS oxide and nitride. Pre-gate clean is performed that removes the TEOS oxide and the sacrificial oxide on the bottom of the openings, gate oxidation is performed creating the ultra-thin layers of gate oxide. Poly is deposited, polished back followed by removal of the nitride leaving the poly gate structure in place and overlying the ultra-thin layer of gate oxide.

摘要翻译： 提供了一种新的制造超薄栅氧化层的方法。 在第一实施例中，沉积牺牲氧化物和氮化物，在氮化物层中产生开口，其中将形成栅极氧化物的超薄层。 一层多晶硅沉积在氮化物层上。 抛光多晶硅层，留下多孔沉积在开口内。 去除氮化物，留下栅极结构覆盖生长的栅极氧化物的位置。 在第二实施例中，沉积牺牲氧化物和氮化物，然后沉积TEOS氧化物。 TEOS，氧化物和氮化物的层被图案化以产生露出氧化物层的表面区域的开口，其中栅极氧化物的超薄层将被生长。 在结构上沉积薄的氮化层保形层，蚀刻该薄层的共形氮化物以在TEOS氧化物和氮化物层中的开口的侧壁上形成薄的间隔物。 进行预栅极清洁，其去除了开口底部的TEOS氧化物和牺牲氧化物，进行栅极氧化，产生栅极氧化物的超薄层。 将Poly沉积，抛光，然后除去留下多晶硅栅结构的氮化物，并覆盖栅极氧化物的超薄层。

公开(公告)号：US06306741B1

公开(公告)日：2001-10-23

申请号：US09615809

申请日：2000-07-13

申请人： James Yong Meng Lee ,  Xia Li ,  Yun Qiang Zhang

发明人： James Yong Meng Lee ,  Xia Li ,  Yun Qiang Zhang

IPC分类号： H01L213205

CPC分类号： H01L21/28202 ,  H01L21/28211 ,  H01L21/28238 ,  H01L21/31116 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66583

摘要： A buffer layer and a gate dielectric layer overlying a substrate having at least one active area is provided. A sacrificial oxide layer is formed over the gate dielectric layer. A nitride layer is formed over the sacrificial oxide layer. The nitride layer is patterned to form an opening therein within the active area exposing a portion of the sacrificial oxide layer within the opening. The portion of the sacrificial oxide layer within the opening is stripped, exposing a portion of the underlying gate dielectric layer within the opening. A gate electrode is formed within opening over the portion of the gate dielectric layer. The remaining nitride layer is selectively removed. The remaining sacrificial oxide layer is then stripped and removed.

摘要翻译： 提供了具有至少一个有效区域的衬底上的缓冲层和栅介质层。 牺牲氧化物层形成在栅极介电层上。 在牺牲氧化物层上形成氮化物层。 图案化氮化物层以在有效区域内形成开口，露出开口内部的牺牲氧化物层的一部分。 剥离开口内的牺牲氧化物层的部分，将下面的栅极介电层的一部分暴露在开口内。 栅极电极形成在栅极电介质层的部分的开口内。 剩余的氮化物层被选择性地去除。 然后剥离并除去剩余的牺牲氧化物层。