公开(公告)号：US08647521B2

公开(公告)日：2014-02-11

申请号：US12133372

申请日：2008-06-05

申请人： Woo Yung Jung

发明人： Woo Yung Jung

IPC分类号： B44C1/22 ,  H01L21/311

CPC分类号： H01L21/0337 ,  H01L21/0338 ,  H01L27/10855 ,  H01L27/10888

摘要： The present invention relates to a method of forming micro patterns of a semiconductor device. In the method according to an aspect of the present invention, first etch mask patterns having a second pitch, which is twice larger than a first pitch of target patterns, are formed in a column direction over a semiconductor substrate. An auxiliary film is formed over the semiconductor substrate including a surface of the first etch mask patterns. An etch mask film is formed over the semiconductor substrate including the auxiliary film. An etch process is performed in order to form second etch mask patterns having the second pitch in such a manner that the etch mask film, the auxiliary film, and the first etch mask patterns are isolated from one another in a row direction and the etch mask film remains between the first etch mask patterns. The auxiliary film between the first and second etch mask patterns is removed.

摘要翻译： 本发明涉及一种形成半导体器件的微图案的方法。 在根据本发明的一个方面的方法中，在半导体衬底上的列方向上形成具有第二间距的第一蚀刻掩模图案，其比目标图案的第一间距大两倍。 辅助膜形成在半导体衬底上，包括第一蚀刻掩模图案的表面。 在包括辅助膜的半导体衬底之上形成蚀刻掩模膜。 执行蚀刻处理以便以这样的方式形成具有第二间距的第二蚀刻掩模图案，使得蚀刻掩模膜，辅助膜和第一蚀刻掩模图案在行方向上彼此隔离，并且蚀刻掩模 膜保留在第一蚀刻掩模图案之间。 去除第一和第二蚀刻掩模图案之间的辅助膜。

公开(公告)号：US08576551B2

公开(公告)日：2013-11-05

申请号：US12883937

申请日：2010-09-16

申请人： Guen-Taek Oh ,  Han-Yung Jung

发明人： Guen-Taek Oh ,  Han-Yung Jung

IPC分类号： G06F1/16 ,  H05K5/00 ,  H05K7/00

CPC分类号： G06F1/1601 ,  F16M11/10 ,  F16M11/22 ,  F16M2200/08 ,  G06F2200/1612 ,  G09G3/3611

摘要： Disclosed herein is an image display device including a liquid crystal panel module for implementing an image; an image display device cover to which the liquid crystal panel module is mounted and fastened; an image display device pedestal base combined with the image display device cover to support the image display device; and a system board mounted within the image display device pedestal base.

摘要翻译： 本文公开了一种图像显示装置，包括用于实现图像的液晶面板模块; 安装和固定液晶面板模块的图像显示装置盖; 与图像显示装置盖结合的图像显示装置基座，以支撑图像显示装置; 以及安装在图像显示装置基座内的系统板。

公开(公告)号：US08318408B2

公开(公告)日：2012-11-27

申请号：US12495184

申请日：2009-06-30

申请人： Woo Yung Jung ,  Guee Hwang Sim

发明人： Woo Yung Jung ,  Guee Hwang Sim

IPC分类号： G03F7/26

CPC分类号： H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/32139

摘要： In a method of forming patterns of a semiconductor device, a semiconductor substrate defining photoresist patterns formed over a target etch layer is provided. An auxiliary layer is formed over the semiconductor substrate and the photoresist patterns. The auxiliary layer formed on a surface of the photoresist patterns is denatured into first auxiliary patterns. A photoresist film is formed over the semiconductor substrate, the first auxiliary patterns, and the auxiliary layer. The auxiliary layer formed below the photoresist film is denatured into a second auxiliary pattern. Here, the auxiliary layer remains only between the photoresist patterns. Etch mask patterns, including the photoresist patterns and the auxiliary layer, are formed by removing the photoresist film and the first and second auxiliary patterns.

摘要翻译： 在形成半导体器件的图案的方法中，提供了限定在目标蚀刻层上形成的光刻胶图案的半导体衬底。 在半导体衬底和光致抗蚀剂图案之上形成辅助层。 形成在光致抗蚀剂图案的表面上的辅助层变性为第一辅助图案。 在半导体衬底，第一辅助图案和辅助层上形成光致抗蚀剂膜。 形成在光致抗蚀剂膜下方的辅助层变性为第二辅助图案。 这里，辅助层仅保留在光致抗蚀剂图案之间。 通过去除光致抗蚀剂膜和第一和第二辅助图案来形成蚀刻掩模图案，包括光致抗蚀剂图案和辅助层。

公开(公告)号：US08212845B2

公开(公告)日：2012-07-03

申请号：US12638883

申请日：2009-12-15

申请人： Jeong Geun Lee ,  Han Seop Kim ,  Han Yung Jung

发明人： Jeong Geun Lee ,  Han Seop Kim ,  Han Yung Jung

IPC分类号： G09G5/10

CPC分类号： G09G3/3614 ,  G09G3/3648 ,  G09G2320/0247

摘要： An LCD device includes: a liquid crystal panel configured to include liquid crystal cells formed in regions defined by crossing gate lines and data lines; an image analyzer configured to analyze whether or not an image data corresponds to a specific pattern in which a black or white gray-scale data having a large difference between positive and negative data voltages is continuously opposed to the liquid crystal cells of a vertical direction; a polarity control signal modulator configured to respond to a control signal from the image analyzer and modulate a polarity control signal, so as to prevent the black gray-scale data continuously opposed to the liquid crystal cells of the vertical direction from being polarity-inverted; and a data driver configured to apply the data voltages to the data lines on the basis of the modulated polarity control signal applied from the polarity control signal modulator.

摘要翻译： LCD装置包括：液晶面板，被配置为包括形成在与栅极线和数据线交叉的区域中形成的液晶单元; 图像分析器，被配置为分析图像数据是否对应于正数据电压和负数据电压之间的差大的黑色或白色灰度数据与垂直方向的液晶单元连续相对的特定图案; 极性控制信号调制器，被配置为响应来自图像分析仪的控制信号并调制极性控制信号，以防止与垂直方向的液晶单元连续相对的黑色灰度数据被极性反转; 以及数据驱动器，被配置为基于从极性控制信号调制器施加的经调制的极性控制信号将数据电压施加到数据线。

公开(公告)号：US07851135B2

公开(公告)日：2010-12-14

申请号：US11948631

申请日：2007-11-30

申请人： Woo Yung Jung ,  Guee Hwang Sim

发明人： Woo Yung Jung ,  Guee Hwang Sim

IPC分类号： G03F7/20 ,  G03F7/40

CPC分类号： G03F7/0035 ,  G03F7/38 ,  H01L21/0334

摘要： The present invention relates to a method of forming an etching mask pattern from developed negative and positive photoresist layers. According to the present invention, a negative photoresist layer is formed over a substrate. Some regions of the negative photoresist layer are exposed, thereby generating hydrogen ions within the exposed negative photoresist regions. The negative photoresist layer is developed so that the exposed negative photoresist regions remain. A positive photoresist layer is formed over the substrate including the remaining negative photoresist regions. The substrate is baked so that hydrogen ions within the remaining negative photoresist regions are diffused into the positive photoresist layer at boundary portions adjacent to the remaining negative photoresist regions. The positive photoresist layer is developed to remove the positive photoresist portions into which the hydrogen ions are diffused.

摘要翻译： 本发明涉及从显影的负和正性光致抗蚀剂层形成蚀刻掩模图案的方法。 根据本发明，在基板上形成负的光致抗蚀剂层。 负光致抗蚀剂层的一些区域被暴露，从而在曝光的负光致抗蚀剂区域内产生氢离子。 显影负性光致抗蚀剂层，使得曝光的负性光致抗蚀剂区域保留。 在包括剩余的负光致抗蚀剂区域的衬底上形成正性光致抗蚀剂层。 对基板进行烘烤，使剩下的负性光致抗蚀剂区域内的氢离子在与其余负性光致抗蚀剂区域相邻的边界部分扩散到正性光致抗蚀剂层中。 显影正性光致抗蚀剂层以去除氢离子扩散到的正性光致抗蚀剂部分。

公开(公告)号：US07575992B2

公开(公告)日：2009-08-18

申请号：US11518351

申请日：2006-09-08

申请人： Woo Yung Jung ,  Jong Hoon Kim

发明人： Woo Yung Jung ,  Jong Hoon Kim

IPC分类号： H01L21/44 ,  H01L21/76 ,  H01L21/4763

CPC分类号： H01L21/0337 ,  H01L21/0338 ,  H01L27/0207 ,  H01L27/11524 ,  Y10S257/906 ,  Y10S257/907 ,  Y10S257/908 ,  Y10S438/947

摘要： A method of forming a micro pattern in a semiconductor device is disclosed. An oxide film mask is divided into a cell oxide film mask and a peri oxide film mask. Therefore, a connection between the cell and the peri region can be facilitated. A portion of a top surface of a first oxide film pattern between a region in which a word line will be formed and a region in which a select source line will be formed is removed. Accordingly, the space can be increased and program disturbance in the region in which the word line will be formed can be prevented. Furthermore, a pattern having a line of 50 nm and a space of 100 nm or a pattern having a line of 100 nm and a space of 50 nm, which exceeds the limitation of the ArF exposure equipment, can be formed using a pattern, which has a line of 100 nm and a space of 200 nm and therefore has a good process margin and a good critical dimension regularity.

摘要翻译： 公开了一种在半导体器件中形成微图案的方法。 将氧化物膜掩模分为电池氧化膜掩模和氧化膜掩模。 因此，可以促进电池和周边区域之间的连接。 去除在其中将形成字线的区域和将形成选择源极线的区域之间的第一氧化膜图案的顶表面的一部分被去除。 因此，可以增加空间，并且可以防止在其中将形成字线的区域中的程序干扰。 此外，可以使用图案形成具有50nm线和100nm的线的图案或超过ArF曝光设备的限制的具有100nm和50nm的线的图案，其中 具有100nm的线和200nm的空间，因此具有良好的工艺裕度和良好的临界尺寸规律性。

公开(公告)号：US20090124086A1

公开(公告)日：2009-05-14

申请号：US12147222

申请日：2008-06-26

申请人： Woo Yung Jung

发明人： Woo Yung Jung

IPC分类号： H01L21/311

CPC分类号： H01L21/0338 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76816 ,  H01L27/1052 ,  H01L27/115 ,  H01L27/11521

摘要： A method of fabricating a flash memory device, in which a pre-metal dielectric layer, a hard mask layer, and a first etch mask pattern are sequentially formed over a semiconductor substrate; an auxiliary layer is formed along a surface of the first etch mask pattern and the hard mask layer; and an etch mask layer is formed on the auxiliary layer to gap-fill between adjacent first etch mask pattern elements. The etch mask layer is etched to form a second etch mask pattern between adjacent first etch mask pattern elements. The auxiliary layer between the first and second etch mask patterns is removed; and a hard mask pattern is formed by etching the hard mask layer between the first etch mask pattern and the second etch mask pattern. The pre-metal dielectric layer is etched process using the hard mask pattern as a mask to form contact holes.

摘要翻译： 一种制造闪存器件的方法，其中在半导体衬底上顺序地形成预金属介电层，硬掩模层和第一蚀刻掩模图案; 沿着第一蚀刻掩模图案和硬掩模层的表面形成辅助层; 并且在辅助层上形成蚀刻掩模层以在相邻的第一蚀刻掩模图案元件之间进行间隙填充。 蚀刻掩模层被蚀刻以在相邻的第一蚀刻掩模图案元件之间形成第二蚀刻掩模图案。 去除第一和第二蚀刻掩模图案之间的辅助层; 并且通过在第一蚀刻掩模图案和第二蚀刻掩模图案之间蚀刻硬掩模层来形成硬掩模图案。 使用硬掩模图案作为掩模来蚀刻前金属介电层以形成接触孔。

公开(公告)号：US20080280431A1

公开(公告)日：2008-11-13

申请号：US11955349

申请日：2007-12-12

申请人： Woo Yung Jung ,  Choi Dong Kim ,  Sang Min Kim

发明人： Woo Yung Jung ,  Choi Dong Kim ,  Sang Min Kim

IPC分类号： H01L21/28

CPC分类号： H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  Y10S438/942

摘要： The present invention relates to a method of fabricating a flash memory device. In a method according to an aspect of the present invention, a first hard mask film is formed over a semiconductor laminate. A plurality of first hard mask patterns are formed by etching an insulating layer for a hard mask. Spacers are formed on top surfaces and sidewalls of the plurality of first hard mask patterns. A second hard mask film is formed over a total surface including the spacers. Second hard mask patterns are formed in spaces between the spacers by performing an etch process so that a top surface of the spacers is exposed. The spacers are removed. Accordingly, gate patterns can be formed by employing hard mask patterns having a pitch of exposure equipment resolutions or less.

摘要翻译： 本发明涉及一种制造闪速存储器件的方法。 在根据本发明的一个方面的方法中，在半导体层叠体上形成第一硬掩模膜。 通过蚀刻用于硬掩模的绝缘层来形成多个第一硬掩模图案。 间隔件形成在多个第一硬掩模图案的顶表面和侧壁上。 在包括间隔物的整个表面上形成第二硬掩模膜。 通过执行蚀刻工艺在间隔物之间​​的空间中形成第二硬掩模图案，使得间隔物的顶表面露出。 去除间隔物。 因此，可以通过采用具有曝光设备分辨率或更小的间距的硬掩模图案来形成栅极图案。

公开(公告)号：US20080248654A1

公开(公告)日：2008-10-09

申请号：US11949642

申请日：2007-12-03

申请人： Woo Yung JUNG

发明人： Woo Yung JUNG

IPC分类号： H01L21/461

CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L21/28123 ,  H01L21/32139 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11529

摘要： A method of forming a micro pattern of a semiconductor device includes forming an etch target layer, a hard mask layer, a Bottom Anti-Reflective Coating (BARC) layer and a first photoresist pattern over a semiconductor substrate. An organic layer is formed on a surface of the first photoresist pattern. A second photoresist layer is formed over the BARC layer and the organic layer. An etch process is performed so that the second photoresist layer remains on the BARC layer between the first photoresist patterns and becomes a second photoresist pattern. The organic layer on the first photoresist pattern and between the first and second photoresist patterns is removed. The BARC layer formed below the organic layer is removed. The hard mask layer is etched using the first and second photoresist patterns as an etch mask. The etch target layer is etched using a hard mask pattern as an etch mask.

摘要翻译： 形成半导体器件的微图案的方法包括在半导体衬底上形成蚀刻目标层，硬掩模层，底部抗反射涂层（BARC）层和第一光致抗蚀剂图案。 在第一光致抗蚀剂图案的表面上形成有机层。 在BARC层和有机层上形成第二光致抗蚀剂层。 执行蚀刻处理，使得第二光致抗蚀剂层保留在第一光致抗蚀剂图案之间的BARC层上，并且变成第二光致抗蚀剂图案。 去除第一光致抗蚀剂图案上的有机层和第一和第二光致抗蚀剂图案之间的有机层。 去除形成在有机层下面的BARC层。 使用第一和第二光致抗蚀剂图案作为蚀刻掩模蚀刻硬掩模层。 使用硬掩模图案作为蚀刻掩模蚀刻蚀刻目标层。

公开(公告)号：US20080064216A1

公开(公告)日：2008-03-13

申请号：US11772005

申请日：2007-06-29

申请人： Guee Hwang Sim ,  Woo Yung Jung

发明人： Guee Hwang Sim ,  Woo Yung Jung

IPC分类号： H01L21/311

CPC分类号： H01L21/0273 ,  G03F7/405 ,  H01L21/0338 ,  H01L21/31144 ,  H01L27/11517

摘要： A method of manufacturing a flash memory device includes providing a substrate having an insulating layer, a first mask layer over the insulating layer, a second mask layer over the first mask layer, a first photoresist pattern over the second mask layer, the first photoresist pattern having a first pitch. A material layer is provided over the first photoresist pattern. The material layer is etched to convert the material layer into a material layer pattern having a second pitch that is less than the first pitch. The second hard mask layer is etched using the material layer pattern to form a second hard mask layer pattern that extends along a first direction. A second photoresist pattern is etched, the second photoresist pattern defining a first region that is not exposed and a second region that is exposed, the second region extending along a second direction that is orthogonal to the first direction. The first hard mask layer is etched using the second photoresist pattern to form a first hard mask layer pattern having an angular shape.

摘要翻译： 一种制造闪速存储器件的方法包括提供具有绝缘层的衬底，绝缘层上的第一掩模层，第一掩模层上的第二掩模层，第二掩模层上的第一光刻胶图案，第一光致抗蚀剂图案 有第一音调。 在第一光致抗蚀剂图案上提供材料层。 蚀刻材料层以将材料层转换成具有小于第一间距的第二间距的材料层图案。 使用材料层图案蚀刻第二硬掩模层，以形成沿着第一方向延伸的第二硬掩模层图案。 蚀刻第二光致抗蚀剂图案，第二光致抗蚀剂图案限定未暴露的第一区域和暴露的第二区域，第二区域沿与第一方向正交的第二方向延伸。 使用第二光致抗蚀剂图案来蚀刻第一硬掩模层以形成具有角形的第一硬掩模层图案。