公开(公告)号：US08889544B2

公开(公告)日：2014-11-18

申请号：US13028889

申请日：2011-02-16

申请人： Yung-Hsu Wu ,  Hsin-Hsien Lu ,  Tien-I Bao ,  Shau-Lin Shue

发明人： Yung-Hsu Wu ,  Hsin-Hsien Lu ,  Tien-I Bao ,  Shau-Lin Shue

IPC分类号： H01L21/768 ,  H01L23/48 ,  H01L21/311 ,  H01L23/532 ,  H01L21/02 ,  H01L21/321

CPC分类号： H01L21/3212 ,  H01L21/02203 ,  H01L21/02348 ,  H01L21/31144 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/7684 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： The disclosure provides mechanisms of performing metal chemical-mechanical polishing (CMP) without significant loss of copper and a dielectric film of damascene structures. The mechanisms use a metal CMP stop layer made of a low-k dielectric film with a porogen, which significantly reduces the removal rate of the metal CMP stop layer by metal CMP. The metal CMP stop layer is converted into a porous low-k dielectric film after a cure (or curing) to remove or convert the porogen. The low-k value, such as equal to or less than about 2.6, of the metal CMP stop layer makes the impact of using of the metal CMP stop layer on RC delay from minimum to none. Further the CMP stop layer protects the porous low-k dielectric film underneath from exposure to water, organic compounds, and mobile ions in the CMP slurry.

摘要翻译： 本公开提供了进行金属化学机械抛光（CMP）而不显着损失铜和镶嵌结构的介电膜的机理。 这些机制使用由具有致孔剂的低k电介质膜制成的金属CMP停止层，这显着地降低了通过金属CMP的金属CMP停止层的去除速率。 在固化（或固化）之后，将金属CMP停止层转化为多孔低k电介质膜以去除或转化致孔剂。 金属CMP停止层的低k值（例如等于或小于约2.6）使得金属CMP停止层的使用对RC延迟的影响从最小到无。 此外，CMP停止层保护下面的多孔低k电介质膜不暴露于CMP浆料中的水，有机化合物和移动离子。

公开(公告)号：US20120205814A1

公开(公告)日：2012-08-16

申请号：US13028889

申请日：2011-02-16

申请人： Yung-Hsu WU ,  Hsin-Hsien LU ,  Tien-I BAO ,  Shau-Lin SHUE

发明人： Yung-Hsu WU ,  Hsin-Hsien LU ,  Tien-I BAO ,  Shau-Lin SHUE

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L21/3212 ,  H01L21/02203 ,  H01L21/02348 ,  H01L21/31144 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/7684 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： The disclosure provides mechanisms of performing metal chemical-mechanical polishing (CMP) without significant loss of copper and a dielectric film of damascene structures. The mechanisms use a metal CMP stop layer made of a low-k dielectric film with a porogen, which significantly reduces the removal rate of the metal CMP stop layer by metal CMP. The metal CMP stop layer is converted into a porous low-k dielectric film after a cure (or curing) to remove or convert the porogen. The low-k value, such as equal to or less than about 2.6, of the metal CMP stop layer makes the impact of using of the metal CMP stop layer on RC delay from minimum to none. Further the CMP stop layer protects the porous low-k dielectric film underneath from exposure to water, organic compounds, and mobile ions in the CMP slurry.

摘要翻译： 本公开提供了进行金属化学机械抛光（CMP）而不显着损失铜和镶嵌结构的介电膜的机理。 这些机制使用由具有致孔剂的低k电介质膜制成的金属CMP停止层，这显着地降低了通过金属CMP的金属CMP停止层的去除速率。 在固化（或固化）之后，将金属CMP停止层转化为多孔低k电介质膜以去除或转化致孔剂。 金属CMP停止层的低k值（例如等于或小于约2.6）使得金属CMP停止层的使用对RC延迟的影响从最小到无。 此外，CMP停止层保护下面的多孔低k电介质膜不暴露于CMP浆料中的水，有机化合物和移动离子。