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公开(公告)号：US20130084164A1
公开(公告)日：2013-04-04
申请号：US13616963
申请日：2012-09-14
IPC分类号： F01D15/12
CPC分类号： F01K25/08
摘要： A power generation apparatus includes an expander and a power transmission shaft that extracts a rotational driving force generated by the expander to the exterior of a housing of the expander. The housing of the expander contains a driving unit of the expander within a space enclosed by a partition wall of the housing. The power transmission shaft includes a magnetic coupling, divided between the interior and exterior of the housing of the expander through the partition wall. The rotational driving force extracted via the magnetic coupling is used as auxiliary power that supplements the power of a driving source provided separately from the expander when driving a rotating machine using the power of the driving source. A clutch mechanism and a speed variator are provided in a power transmission path that transmits the rotational driving force extracted by the power transmission shaft to the driving source.
摘要翻译： 发电装置包括：膨胀机和动力传递轴，其将由膨胀机产生的旋转驱动力提取到膨胀机壳体的外部。 膨胀机的壳体包含在由壳体的隔壁包围的空间内的膨胀机的驱动单元。 动力传递轴包括通过分隔壁在膨胀器的壳体的内部和外部之间分配的磁耦合。 当使用驱动源的动力驱动旋转机器时，通过磁耦合提取的旋转驱动力被用作辅助动力，其补充与扩展器分开设置的驱动源的功率。 在将动力传递轴提取的旋转驱动力传递到驱动源的动力传递路径中设置有离合器机构和变速器。
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公开(公告)号：US06221743B1
公开(公告)日：2001-04-24
申请号：US09111377
申请日：1998-07-07
申请人： Takao Fujikawa , Yutaka Narukawa , Itaru Masuoka , Kohei Suzuki
发明人： Takao Fujikawa , Yutaka Narukawa , Itaru Masuoka , Kohei Suzuki
IPC分类号： H01L21425
CPC分类号： H01L21/26533 , H01L21/76243
摘要： The present invention provides a method for processing a substrate in which crystal defects occurring according to ion implantation can be prevented from being integrated to form defects such as dislocation or large vacancies in the manufacture of a SIMOX substrate by implanting oxygen atom to a Si base by ion implantation and reacting it with Si to form a buried oxide film. The annealing after ion implantation is performed under a gas atmosphere pressurized to, for example, about 100 MPa. In the pressurized state, a structure having a smaller volume is thermodynamically more stable, and a behavior as increases crystal distortion is arrested in the annealing. Thus, crystal defects can be laid in uniformly dispersed state, vacancies can be also extinguished, and a Si base of good quality suitable for manufacture of ULSI in which defects such as dislocation are reduced can be provided.
摘要翻译： 本发明提供了一种处理衬底的方法，其中可以防止根据离子注入发生的晶体缺陷被集成在SIMOX衬底的制造中，通过将氧原子注入到Si衬底中而形成诸如位错或大空位的缺陷 离子注入并与Si反应形成掩埋氧化膜。 离子注入后的退火在加压至例如约100MPa的气体气氛下进行。 在加压状态下，具有较小体积的结构在热力学上更稳定，并且在退火中阻止增加晶体变形的行为。 因此，可以以均匀分散的状态铺设晶体缺陷，空位也可以熄灭，并且可以提供适合制造其中诸如位错的缺陷减少的ULSI的良好质量的Si基底。
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公开(公告)号：US5979306A
公开(公告)日：1999-11-09
申请号：US47402
申请日：1998-03-25
IPC分类号： B01J3/00 , B01J3/03 , B01J3/04 , H01L21/314 , H01L21/324 , H01L21/768 , B30B15/34
CPC分类号： B01J3/008 , B01J3/03 , B01J3/04 , H01L21/314
摘要： A heating pressure processing apparatus in which gas sealing property and safety can be ensured, and economic property can be improved in heating pressure processing of workpieces such as Si wafers sheet by sheet. A processing vessel 1 formed of vessel components 2, 3 is divided into at least two parts or more in the axial direction thereof and has a seal ring 9 provided in the divided parts of the vessel components 2, parts 3 in such a manner as to be replaceable. The vessel components 2, 3 have shaped parts forming a processing space 5 for a workpiece 4 when the divided parts are sealed through the seal ring 9, the vessel components 2, 3 also having cooling means 10 for the seal ring 9. A ram is provided 18 for pressing the vessel components 2, 3 in the axial direction of the vessel in order to ensure the sealing in the divided parts; and a gas introducing device 20 is provided for introducing a pressurized gas to the processing space 5 in order to process the workpiece.
摘要翻译： 能够确保气体密封性和安全性的加热压力处理装置，并且可以逐张地提高诸如Si晶片的工件的加热压力加工的经济性。 由容器部件2,3形成的处理容器1在其轴向上被分成至少两部分以上，并且具有设置在容器部件2，部件3的分割部分中的密封环9， 可更换 容器部件2,3具有成形部件，当分隔部件通过密封环9密封时，形成工件4的处理空间5，容器部件2,3也具有用于密封环9的冷却装置10。 设置用于在容器的轴向方向上按压容器部件2,3，以确保分割部分的密封; 并且设置有用于将加压气体引入处理空间5以便处理工件的气体引入装置20。
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4.发明授权Method and device for high-temperature, high-pressure treatment of semiconductor wafer 失效用于半导体晶片高温高压处理的方法和装置公开(公告)号：US06285010B1
公开(公告)日：2001-09-04
申请号：US09520218
申请日：2000-03-07
IPC分类号： A21B100
CPC分类号： H01L21/67109 , H01L21/76882
摘要： In a high-temperature, high-pressure treatment method for semiconductor wafer for charging a wafer-like semiconductor material in a pressure vessel, forcing and pressurizing an inert gas such as argon thereto, and raising the temperature by heating by use of an electric resistance type heater, wafers are vertically stacked in the treatment chamber, and the heater is arranged within the treatment chamber to perform the treatment while supplying a heating power by DC to the heater, whereby generation of particles from the heater is suppressed.
摘要翻译： 在用于对压力容器中的晶片状半导体材料进行充电的半导体晶片的高温高压处理方法中，对诸如氩的惰性气体进行加压和加压，并且通过使用电阻加热来升高温度 将晶片垂直堆叠在处理室中，并且加热器布置在处理室内，以通过DC向加热器提供加热功率进行处理，从而抑制来自加热器的颗粒的产生。
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公开(公告)号：US06960318B2
公开(公告)日：2005-11-01
申请号：US10600343
申请日：2003-06-23
申请人： Makoto Yoneda , Tomomitsu Nakai , Shigeo Kofune , Yutaka Narukawa , Takeshi Kanda , Takeo Nishimoto
发明人： Makoto Yoneda , Tomomitsu Nakai , Shigeo Kofune , Yutaka Narukawa , Takeshi Kanda , Takeo Nishimoto
CPC分类号： B30B11/002 , C21D9/00 , C21D9/0006 , C21D2241/01
摘要： In a high temperature/high pressure vessel for treating a workpiece placed in the interior of the vessel at a high temperature and a high pressure wherein piano wire is wound under tension round an outer periphery of a cylindrical body to apply a compressive residual stress to the cylindrical body and axial openings of the cylindrical body are tightly closed with upper and lower lids so that the lids can be disengaged from the openings, the cylindrical body is constituted as a two-layer cylindrical body comprising an inner cylinder and an outer cylinder which is fitted on the inner cylinder through plural spacers arranged along an outer periphery surface of the inner cylinder, allowing cooling water flow paths to be formed each between adjacent such spacers so as to extend from one end side to an opposite end side of the tow-layer cylindrical body. In this high temperature/high pressure vessel, vessel packings can be cooled effectively, the piano wire is not wet with cooling water, and the internal space of the vessel can be utilized effectively.
摘要翻译： 在高温高压容器中，用于在高温高压条件下处理放置在容器内部的工件，其中钢琴线在张力下缠绕在圆柱体的外周上，以将压缩残余应力施加到 圆柱体和圆柱体的轴向开口用上盖和下盖紧密关闭，使得盖可以从开口脱离，圆柱体构成为包括内筒和外筒的双层圆柱体， 通过沿着内筒的外周面排列的多个隔离片安装在内筒上，允许在相邻的这些间隔件之间形成冷却水流动路径，以便从丝束层的一端侧到另一端侧 圆柱体。 在这种高温/高压容器中，可以有效地冷却容器填料，钢丝绳不会被冷却水弄湿，并能有效利用容器的内部空间。
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公开(公告)号：US06328560B1
公开(公告)日：2001-12-11
申请号：US09496058
申请日：2000-02-02
IPC分类号： F27B504
CPC分类号： C23C14/5806 , C23C14/046 , C23C14/5886 , C30B33/005
摘要： An inner vessel 16 capable of hermetically surrounding a portion for disposing works W is disposed to the inside of a pressure vessel 4, the inner vessel 16 is provided with a gas introducing portion 18 at a lower position thereof free from the effect a high temperature atmosphere formed by heaters 11 and 12, a filter 20 is disposed to the gas introducing portion 18 and a check valve 19 is disposed to the inner vessel 16 for allowing a gas to flow unidirectionally from the inside to the outside thereof.
摘要翻译： 能够气密地围绕用于设置工件W的部分的内部容器16设置在压力容器4的内部，内部容器16在其下部设置有气体导入部18，而不产生高温气氛 由加热器11和12形成，过滤器20设置在气体导入部分18上，止回阀19设置在内部容器16上，用于允许气体从内部单向流动到外部。
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公开(公告)号：US4968009A
公开(公告)日：1990-11-06
申请号：US397881
申请日：1989-08-23
申请人： Akira Asari , Takahiko Ishii , Yutaka Narukawa
发明人： Akira Asari , Takahiko Ishii , Yutaka Narukawa
CPC分类号： F27D9/00 , B30B11/002
摘要： A cooling device for a high pressure vessel which is simple in construction and high in safety and has a high cooling faculty without the necessity of changing a design of the high pressure vessel. The cooling device has a cylindrical cooling medium jacket having a cooling medium passage formed therein. The cooling medium jacket is removably disposed in a high pressure chamber of the high pressure vessel between the high pressure vessel and an insulation mantle surrounding a heater in the high pressure chamber such that a gap may be left between the high pressure vessel and the cooling medium jacket. The cooling medium jacket has a passage hole formed therein for establishing communication between the gap and the high pressure chamber to allow pressure medium to be introduced into the gap. The cooling device further includes a pressure medium supply means provided in the gap for introducing therethrough pressure medium different from the pressure medium for the HIP process to support THE cooling medium jacket with a hydraulic pressure of the different pressure medium.
摘要翻译： 一种用于高压容器的冷却装置，其结构简单且安全性高，并且具有高冷却能力，而不需要改变高压容器的设计。 冷却装置具有在其中形成有冷却介质通道的圆柱形冷却介质套管。 冷却介质护套可移除地设置在高压容器的高压室中，在高压容器和围绕高压室中的加热器的绝缘套之间，使得高压容器和冷却介质之间可能留有间隙 夹克。 冷却介质套管具有形成在其中的通道孔，用于建立间隙和高压室之间的连通，以允许将压力介质引入到间隙中。 冷却装置还包括设置在间隙中的压力介质供给装置，用于引入不同于用于HIP工艺的压力介质的压力介质，以用不同压力介质的液压支撑冷却介质套管。
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公开(公告)号：US08836191B2
公开(公告)日：2014-09-16
申请号：US13566197
申请日：2012-08-03
CPC分类号： F01C1/16 , F04C29/0064
摘要： A power generation apparatus includes a housing that contains a driving unit of the expander within a space enclosed by a partition wall, and a magnetic coupling that is divided between the inside and outside of the housing through the partition wall and that transmits the rotational driving force of the expander to the exterior of the housing. The magnetic coupling includes driving-side magnets and slave-side magnets, and first and second magnetic path formation members respectively magnetically connect the driving-side magnets and also the slave-side magnets.
摘要翻译： 发电装置包括壳体，该壳体在由隔壁包围的空间内容纳有膨胀机的驱动单元，以及通过隔壁在壳体的内部和外部之间分配的磁性联轴器，并且将该旋转驱动力 的扩展器到外壳的外壳。 磁耦合包括驱动侧磁体和从动磁体，第一和第二磁路形成部件分别磁耦合驱动侧磁体和从侧磁体。
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9.发明授权High-temperature high-pressure processing method for semiconductor wafers, and an anti-oxidizing body used for the method 有权用于半导体晶片的高温高压处理方法和用于该方法的抗氧化体公开(公告)号：US06455446B2
公开(公告)日：2002-09-24
申请号：US09788416
申请日：2001-02-21
申请人： Yutaka Narukawa , Makoto Kadoguchi
发明人： Yutaka Narukawa , Makoto Kadoguchi
IPC分类号： H01L21324
CPC分类号： C30B33/00 , H01L21/76838
摘要： A high-temperature high-pressure processing method for semiconductor wafers in which semiconductor wafers are charged into a pressure vessel to carry out processing under the gas atmosphere of high-temperature high-pressure, wherein the high-temperature high-pressure processing is carried out in the state that an anti-oxidizing body (an oxygen getter member) formed of a material having properties in which oxygen is apt to diffuse into interior is arranged within the pressure vessel whereby the anti-oxidizing body takes oxygen into the pressure vessel, thus preventing oxygen within the pressure vessel from being reduced to oxidize the surfaces of the semiconductor wafers in the high-temperature high-pressure processing.
摘要翻译： 一种用于半导体晶片的高温高压处理方法，其中将半导体晶片装入压力容器中以在高温高压气体气氛下进行加工，其中进行高温高压处理 在由氧气容易扩散到内部的具有特性的材料形成的抗氧化体（吸氧剂构件）配置在压力容器内，由此抗氧化体将氧气吸入压力容器，因此 防止压力容器内的氧气在高温高压处理中被还原成氧化半导体晶片的表面。
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公开(公告)号：US06323120B1
公开(公告)日：2001-11-27
申请号：US09522473
申请日：2000-03-09
申请人： Takao Fujikawa , Yutaka Narukawa , Kohei Suzuki , Takuya Masui
发明人： Takao Fujikawa , Yutaka Narukawa , Kohei Suzuki , Takuya Masui
IPC分类号： H01L21283
CPC分类号： H01L21/76873 , H01L21/76843 , H01L21/76882
摘要： A method of forming an intact wiring film by applying a filling treatment with a metal material with no pores to holes/trenches, the method comprising forming a barrier layer 3 to an insulation film 2 having holes/trenches 2A, forming a seed layer by a PVD method on the surface of the barrier layer and laminating a wiring film 5A by a electrolytic plating method and heat treating the same under a high temperature/high pressure gas atmosphere.
摘要翻译： 通过对孔/沟槽没有孔的金属材料进行填充处理来形成完整的布线膜的方法，该方法包括在具有孔/沟槽2A的绝缘膜2上形成阻挡层3，形成阻挡层3，通过 PVD法，通过电解电镀法层叠布线膜5A，并在高温高压气体气氛下进行热处理。
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