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公开(公告)号：US06328560B1
公开(公告)日：2001-12-11
申请号：US09496058
申请日：2000-02-02
IPC分类号： F27B504
CPC分类号： C23C14/5806 , C23C14/046 , C23C14/5886 , C30B33/005
摘要： An inner vessel 16 capable of hermetically surrounding a portion for disposing works W is disposed to the inside of a pressure vessel 4, the inner vessel 16 is provided with a gas introducing portion 18 at a lower position thereof free from the effect a high temperature atmosphere formed by heaters 11 and 12, a filter 20 is disposed to the gas introducing portion 18 and a check valve 19 is disposed to the inner vessel 16 for allowing a gas to flow unidirectionally from the inside to the outside thereof.
摘要翻译： 能够气密地围绕用于设置工件W的部分的内部容器16设置在压力容器4的内部，内部容器16在其下部设置有气体导入部18，而不产生高温气氛 由加热器11和12形成，过滤器20设置在气体导入部分18上，止回阀19设置在内部容器16上，用于允许气体从内部单向流动到外部。
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公开(公告)号：US06733592B2
公开(公告)日：2004-05-11
申请号：US10142990
申请日：2002-05-13
申请人： Takao Fujikawa , Yoichi Inoue , Yutaka Narukawa , Takahiko Ishii , Tsuneharu Masuda , Makoto Kadoguchi , Yoshihiko Sakashita
发明人： Takao Fujikawa , Yoichi Inoue , Yutaka Narukawa , Takahiko Ishii , Tsuneharu Masuda , Makoto Kadoguchi , Yoshihiko Sakashita
IPC分类号： C23C1600
CPC分类号： C30B33/005 , H01L21/67109 , Y10S414/135
摘要： The present invention has an object to obtain a small-size, high-temperature and high-pressure treatment device adapted to treat semiconductor wafers. The high-temperature and high-pressure device of the invention is intended to treat semiconductor wafers in an atmosphere of high-temperature and high-pressure gas, and comprises a pressure vessel having at a lower portion thereof an opening for putting the semiconductor wafers in and out, a lower lid disposed so as to be vertically movable for opening and closing the lower opening, wafer transfer means for stacking and unstacking the semiconductor wafers onto and from the lower lid, and a heater attached to the lower lid for heating the semiconductor wafers.
摘要翻译： 本发明的目的是获得适于处理半导体晶片的小尺寸，高温和高压处理装置。 本发明的高温高压装置旨在在高温高压气体的气氛中处理半导体晶片，并且包括在其下部具有用于将半导体晶片放置在其中的开口的压力容器 并且，设置成能够垂直移动以便打开和关闭下部开口的下盖，用于将半导体晶片堆叠和分离到下盖上的晶片传送装置和附接到下盖的加热半导体的加热器 晶圆
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3.发明授权Method and device for high-temperature, high-pressure treatment of semiconductor wafer 失效用于半导体晶片高温高压处理的方法和装置公开(公告)号：US06285010B1
公开(公告)日：2001-09-04
申请号：US09520218
申请日：2000-03-07
IPC分类号： A21B100
CPC分类号： H01L21/67109 , H01L21/76882
摘要： In a high-temperature, high-pressure treatment method for semiconductor wafer for charging a wafer-like semiconductor material in a pressure vessel, forcing and pressurizing an inert gas such as argon thereto, and raising the temperature by heating by use of an electric resistance type heater, wafers are vertically stacked in the treatment chamber, and the heater is arranged within the treatment chamber to perform the treatment while supplying a heating power by DC to the heater, whereby generation of particles from the heater is suppressed.
摘要翻译： 在用于对压力容器中的晶片状半导体材料进行充电的半导体晶片的高温高压处理方法中，对诸如氩的惰性气体进行加压和加压，并且通过使用电阻加热来升高温度 将晶片垂直堆叠在处理室中，并且加热器布置在处理室内，以通过DC向加热器提供加热功率进行处理，从而抑制来自加热器的颗粒的产生。
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公开(公告)号：US06491518B1
公开(公告)日：2002-12-10
申请号：US09287558
申请日：1999-04-06
IPC分类号： F27D312
CPC分类号： H01L21/67109 , C30B31/10
摘要： An apparatus treating substrates in a high-temperature and high-pressure atmosphere, the substrates being treated in a batch that includes one lot of the substrates treated as a unit. A supporting jig is provided with means to support a plurality of the substrates in a shelved arrangement, the supporting jig and substrates being configured to enter and exit from a treating chamber within a pressure vessel as a single unit. The supporting jig is surrounded by a casing. In order to cope with the difficulty of oxidization of the substrates, an oxygen getter is disposed in either the supporting jig or in the casing. The pressure vessel includes an opening whereby a reducing gas can be introduced into the treating chamber. Further, the pressure vessel and a stocking portion of the substrates are installed within a housing such that contamination is further reduced and control is made easier.
摘要翻译： 一种在高温高压气氛中处理基板的设备，其中一批处理的基板包括一批作为一个单元处理的基板。 支撑夹具设置有用于将多个基板支撑在搁置布置中的装置，支撑夹具和基板构造成作为单个单元进入和离开压力容器内的处理室。 支撑夹具被壳体包围。 为了应对基板氧化的困难，将氧吸气剂设置在支撑夹具或壳体中。 压力容器包括开口，由此可以将还原气体引入处理室。 此外，压力容器和基材的放养部分安装在壳体内，使得污染进一步减小，并且控制变得更容易。
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公开(公告)号：US06299739B1
公开(公告)日：2001-10-09
申请号：US09294031
申请日：1999-04-20
申请人： Takao Fujikawa , Takahiko Ishii , Yutaka Narukawa , Makoto Kadoguchi , Yasushi Mizusawa , Tomoyasu Kondou , Yuji Taguchi
发明人： Takao Fujikawa , Takahiko Ishii , Yutaka Narukawa , Makoto Kadoguchi , Yasushi Mizusawa , Tomoyasu Kondou , Yuji Taguchi
IPC分类号： C23C1414
CPC分类号： C23C14/046 , H01L21/2855 , H01L21/76877
摘要： This invention provides a method of forming a metal wiring film excellent in EM resistance and low electric resistance. In a method of forming a wiring structure by filming and covering the surface of the insulating film of a substrate to be treated having a hole or groove formed thereon with a metallic material such as copper, aluminum, silver or the like, thereby filling the hole or groove inner part with the metallic material to form a wiring structure, the substrate to be treated is exposed to a high temperature under a high-pressure gas atmosphere after the continuous filming and covering with the metallic material along the inner surface profile of the hole or groove, whereby the surface diffusion phenomenon of the metallic material is promoted to reform the metal film into a film structure as the surface area of the metal film is minimized.
摘要翻译： 本发明提供一种形成EM电阻和低电阻优异的金属布线膜的方法。在通过对形成有孔或槽的待处理基板的绝缘膜的表面进行成膜和覆盖来形成布线结构的方法中 在其上用金属材料如铜，铝，银等，由此用金属材料填充孔或槽内部以形成布线结构，待处理的基板在高压下暴露于高温 气体气氛，连续成膜后沿着孔或槽的内表面轮廓与金属材料覆盖，从而促进金属材料的表面扩散现象，将金属膜重整为薄膜结构，作为金属的表面积 电影最小化。
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公开(公告)号：US4983112A
公开(公告)日：1991-01-08
申请号：US382267
申请日：1989-07-20
CPC分类号： B30B11/002 , B22F3/15 , C21D1/74 , F27D21/04 , F27D7/06 , F27D2021/0078
摘要： An interlocking device for a HIP equipment that prevents possible damage to the HIP equipment arising from use of a furnace or processing gas in error and can control the oxygen concentration and pressure within the HIP equipment. The device includes a sensor for detecting a concentration of oxygen in the processing gas in a processing gas pipe system. If the sensor detects an excessively high oxygen concentration, a supply side interlocking mechanism closes a valve for the pipe system and disconnects a power source for a furnace in a high pressure vessel. A flow switch is connected to a safety pipe system having a safety device, and a thermocouple is provided for each of the safety and processing gas pipe systems and a relief pipe system. When the flow switch detects processing gas being spouted from the safety pipe system and/or when one of the temperature signals from the thermocouples exceeds a preset value, a relief side interlocking mechanism closes the processing gas pipe system, opens the relief pipe system, stops a gas compressor and disconnects the power source.
摘要翻译： 一种用于HIP设备的互锁装置，其可防止由于使用炉子而产生的HIP设备或由于处理气体而导致的HIP设备的可能损坏，并且可以控制HIP设备内的氧气浓度和压力。 该装置包括用于检测处理气体管道系统中处理气体中的氧浓度的传感器。 如果传感器检测到氧浓度过高，则供给侧互锁机构关闭用于管道系统的阀，并且在高压容器中断开炉的电源。 流量开关连接到具有安全装置的安全管系统，并且为每个安全和加工气体管道系统以及安全管系统提供热电偶。 当流量开关检测到从安全管道系统喷出的处理气体和/或当来自热电偶的温度信号之一超过预设值时，泄压侧联锁机构关闭处理气体管道系统，打开排水管系统，停止 气体压缩机并断开电源。
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公开(公告)号：US06451682B1
公开(公告)日：2002-09-17
申请号：US09429109
申请日：1999-10-28
申请人： Takao Fujikawa , Makoto Kadoguchi , Kohei Suzuki , Yasushi Mizusawa , Tomoyasu Kondou , Yoji Taguchi
发明人： Takao Fujikawa , Makoto Kadoguchi , Kohei Suzuki , Yasushi Mizusawa , Tomoyasu Kondou , Yoji Taguchi
IPC分类号： H01L214763
CPC分类号： H01L21/76864 , H01L21/76843 , H01L21/76873 , H01L21/76882
摘要： This invention provides a filming method for covering the surface of the insulating film of a semiconductor substrate with a copper interconnect film free from pores. The surface of the insulating film 2 of a semiconductor substrate 1 is filmed with a copper or copper alloy 3 by any one of plating, CVD and PVD, and the whole body is then heated under a high-pressure gas atmosphere to cover the surface with an interconnect film 4 free from pores.
摘要翻译： 本发明提供了一种用不含孔的铜互连膜覆盖半导体衬底的绝缘膜的表面的成膜方法。半导体衬底1的绝缘膜2的表面用铜或铜合金3通过任何 电镀，CVD和PVD之一，然后在高压气体气氛下加热全体，以便用不含孔的互连膜4覆盖表面。
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8.发明授权公开(公告)号：US06790774B2
公开(公告)日：2004-09-14
申请号：US10314990
申请日：2002-12-10
申请人： Takao Fujikawa , Makoto Kadoguchi , Kohei Suzuki , Takuya Masui
发明人： Takao Fujikawa , Makoto Kadoguchi , Kohei Suzuki , Takuya Masui
IPC分类号： H01L2144
CPC分类号： H01L21/2855 , H01L21/76882 , H01L21/76886
摘要： A wiring film, which can be formed into wiring for ULSI semiconductor circuits, is formed by first forming holes in an insulating film on a substrate; then depositing a metallic material of copper, copper alloy, silver or silver alloy into the holes under an atmosphere including hydrogen; and finally annealing the deposited metallic material. The metallic material can be deposited by a sputtering process in which the atmosphere includes an inert gas in addition to the hydrogen. Hydrogen doped in the metallic material during the sputtering process promotes diffusion of atoms in the metallic material. The diffusion eliminates voids in the deposited metallic material.
摘要翻译： 可以形成为ULSI半导体电路的布线的布线膜通过在基板上的绝缘膜中首先形成孔而形成; 然后在包含氢气的气氛下将铜，铜合金，银或银合金的金属材料沉积到孔中; 最后退火沉积的金属材料。 金属材料可以通过溅射工艺沉积，其中除了氢气之外，气氛中还包括惰性气体。 在溅射过程中在金属材料中掺杂的氢促进金属材料中原子的扩散。 扩散消除沉积的金属材料中的空隙。
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公开(公告)号：US06221743B1
公开(公告)日：2001-04-24
申请号：US09111377
申请日：1998-07-07
申请人： Takao Fujikawa , Yutaka Narukawa , Itaru Masuoka , Kohei Suzuki
发明人： Takao Fujikawa , Yutaka Narukawa , Itaru Masuoka , Kohei Suzuki
IPC分类号： H01L21425
CPC分类号： H01L21/26533 , H01L21/76243
摘要： The present invention provides a method for processing a substrate in which crystal defects occurring according to ion implantation can be prevented from being integrated to form defects such as dislocation or large vacancies in the manufacture of a SIMOX substrate by implanting oxygen atom to a Si base by ion implantation and reacting it with Si to form a buried oxide film. The annealing after ion implantation is performed under a gas atmosphere pressurized to, for example, about 100 MPa. In the pressurized state, a structure having a smaller volume is thermodynamically more stable, and a behavior as increases crystal distortion is arrested in the annealing. Thus, crystal defects can be laid in uniformly dispersed state, vacancies can be also extinguished, and a Si base of good quality suitable for manufacture of ULSI in which defects such as dislocation are reduced can be provided.
摘要翻译： 本发明提供了一种处理衬底的方法，其中可以防止根据离子注入发生的晶体缺陷被集成在SIMOX衬底的制造中，通过将氧原子注入到Si衬底中而形成诸如位错或大空位的缺陷 离子注入并与Si反应形成掩埋氧化膜。 离子注入后的退火在加压至例如约100MPa的气体气氛下进行。 在加压状态下，具有较小体积的结构在热力学上更稳定，并且在退火中阻止增加晶体变形的行为。 因此，可以以均匀分散的状态铺设晶体缺陷，空位也可以熄灭，并且可以提供适合制造其中诸如位错的缺陷减少的ULSI的良好质量的Si基底。
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公开(公告)号：US5979306A
公开(公告)日：1999-11-09
申请号：US47402
申请日：1998-03-25
IPC分类号： B01J3/00 , B01J3/03 , B01J3/04 , H01L21/314 , H01L21/324 , H01L21/768 , B30B15/34
CPC分类号： B01J3/008 , B01J3/03 , B01J3/04 , H01L21/314
摘要： A heating pressure processing apparatus in which gas sealing property and safety can be ensured, and economic property can be improved in heating pressure processing of workpieces such as Si wafers sheet by sheet. A processing vessel 1 formed of vessel components 2, 3 is divided into at least two parts or more in the axial direction thereof and has a seal ring 9 provided in the divided parts of the vessel components 2, parts 3 in such a manner as to be replaceable. The vessel components 2, 3 have shaped parts forming a processing space 5 for a workpiece 4 when the divided parts are sealed through the seal ring 9, the vessel components 2, 3 also having cooling means 10 for the seal ring 9. A ram is provided 18 for pressing the vessel components 2, 3 in the axial direction of the vessel in order to ensure the sealing in the divided parts; and a gas introducing device 20 is provided for introducing a pressurized gas to the processing space 5 in order to process the workpiece.
摘要翻译： 能够确保气体密封性和安全性的加热压力处理装置，并且可以逐张地提高诸如Si晶片的工件的加热压力加工的经济性。 由容器部件2,3形成的处理容器1在其轴向上被分成至少两部分以上，并且具有设置在容器部件2，部件3的分割部分中的密封环9， 可更换 容器部件2,3具有成形部件，当分隔部件通过密封环9密封时，形成工件4的处理空间5，容器部件2,3也具有用于密封环9的冷却装置10。 设置用于在容器的轴向方向上按压容器部件2,3，以确保分割部分的密封; 并且设置有用于将加压气体引入处理空间5以便处理工件的气体引入装置20。
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