公开(公告)号：US09321741B2

公开(公告)日：2016-04-26

申请号：US13695508

申请日：2010-04-30

申请人： Hiroki Yasuda ,  Ryoichi Kimizuka ,  Tatsuji Takasu ,  Takuro Sato ,  Hiroshi Ishizuka ,  Yasuhiro Ogo ,  Yuto Oyama ,  Yu Tonooka ,  Mikiko Kosaka ,  Aya Shimomura ,  Yumiko Shimizu

发明人： Hiroki Yasuda ,  Ryoichi Kimizuka ,  Tatsuji Takasu ,  Takuro Sato ,  Hiroshi Ishizuka ,  Yasuhiro Ogo ,  Yuto Oyama ,  Yu Tonooka ,  Mikiko Kosaka ,  Aya Shimomura ,  Yumiko Shimizu

IPC分类号： C25D3/38 ,  C07D295/08 ,  C07D295/088 ,  H01L21/768 ,  H01L21/288 ,  H05K3/42 ,  H05K3/46

CPC分类号： C07D295/08 ,  C07D295/088 ,  C25D3/38 ,  H01L21/2885 ,  H01L21/76898 ,  H05K3/421 ,  H05K3/423 ,  H05K3/4644 ,  H05K2201/09509 ,  H05K2201/09563

摘要： Provided is a copper plating technique that enables the filling of high aspect-ratio via-holes and through-holes in semiconductor substrates such as silicon substrates, organic material substrates or ceramic substrates. The disclosed technique involves a tertiary amine compound, which is obtained by reacting a heterocyclic compound with the epoxy group of a glycidyl ether group of a compound that has three or more glycidyl ether groups, and a quaternary amine compound thereof, as well as a copper plating additive, a copper plating bath, and a copper plating method employing the compounds.

摘要翻译： 提供一种铜电镀技术，其能够填充诸如硅衬底，有机材料衬底或陶瓷衬底的半导体衬底中的高纵横比通孔和通孔。 所公开的技术涉及通过使杂环化合物与具有三个或更多个缩水甘油醚基团的化合物的缩水甘油醚基团的环氧基及其季胺化合物反应而获得的叔胺化合物，以及铜 电镀添加剂，铜电镀浴和使用该化合物的镀铜方法。

公开(公告)号：US20130043137A1

公开(公告)日：2013-02-21

申请号：US13695508

申请日：2010-04-30

申请人： Hiroki Yasuda ,  Ryoichi Kimizuka ,  Tatsuji Takasu ,  Takuro Sato ,  Hiroshi Ishizuka ,  Yasuhiro Ogo ,  Yuto Oyama ,  Yu Tonooka ,  Mikiko Kosaka ,  Aya Shimomura ,  Yumiko Shimizu

发明人： Hiroki Yasuda ,  Ryoichi Kimizuka ,  Tatsuji Takasu ,  Takuro Sato ,  Hiroshi Ishizuka ,  Yasuhiro Ogo ,  Yuto Oyama ,  Yu Tonooka ,  Mikiko Kosaka ,  Aya Shimomura ,  Yumiko Shimizu

IPC分类号： C25D3/38 ,  C07D401/14 ,  C07D403/14

CPC分类号： C07D295/08 ,  C07D295/088 ,  C25D3/38 ,  H01L21/2885 ,  H01L21/76898 ,  H05K3/421 ,  H05K3/423 ,  H05K3/4644 ,  H05K2201/09509 ,  H05K2201/09563

摘要： Provided is a copper plating technique that enables the filling of high aspect-ratio via-holes and through-holes in semiconductor substrates such as silicon substrates, organic material substrates or ceramic substrates. The disclosed technique involves a tertiary amine compound, which is obtained by reacting a heterocyclic compound with the epoxy group of a glycidyl ether group of a compound that has three or more glycidyl ether groups, and a quaternary amine compound thereof, as well as a copper plating additive, a copper plating bath, and a copper plating method employing the compounds.

摘要翻译： 提供一种铜电镀技术，其能够填充诸如硅衬底，有机材料衬底或陶瓷衬底的半导体衬底中的高纵横比通孔和通孔。 所公开的技术涉及通过使杂环化合物与具有三个或更多个缩水甘油醚基团的化合物的缩水甘油醚基团的环氧基及其季胺化合物反应而获得的叔胺化合物，以及铜 电镀添加剂，铜电镀浴和使用该化合物的镀铜方法。