公开(公告)号：US10465266B2

公开(公告)日：2019-11-05

申请号：US15314671

申请日：2015-05-22

Applicant: A.L.M.T. Corp.

Inventor： Ayuri Tsuji ,  Shigekazu Yamazaki ,  Akihiko Ikegaya ,  Noboru Uenishi

IPC: C22C27/04 ,  B22F1/00 ,  B22F3/10 ,  B23K20/12 ,  C22C32/00

Abstract: The present heat-resistant tungsten alloy has a first phase containing W as a major component, a second phase having a carbonitride of at least one element of Ti, Zr and Hf and containing the carbonitride as a major component when W is removed, and a third phase having a carbide of at least one element of group 5A elements in the periodic table and containing the carbide as a major component when W is removed, the heat-resistant tungsten alloy having a Vickers hardness of 550 Hv or more at a room temperature, a displacement of 1 mm or more when leading to fracture, as determined in a three point bending test at 1200° C., and a 0.2% proof stress of 900 MPa or more, as determined in the three point bending test at 1200° C.

公开(公告)号：US20150351241A1

公开(公告)日：2015-12-03

申请号：US14759618

申请日：2013-12-17

Applicant: A.L.M.T. CORP.

Inventor： Yoshiyuki Hirose ,  Sachie Sugitani ,  Norihito Goma ,  Gouhei Toyoshima ,  Noboru Uenishi

IPC: H05K1/11 ,  H05K1/18

CPC classification number: H05K1/115 ,  B22F2998/10 ,  B23K35/0233 ,  B23K35/262 ,  B32B15/00 ,  C22C5/02 ,  C22C5/04 ,  C22C5/06 ,  C22C9/00 ,  C22C14/00 ,  C22C27/04 ,  H01L23/15 ,  H01L23/3677 ,  H01L2924/0002 ,  H05K1/0204 ,  H05K1/0306 ,  H05K1/092 ,  H05K1/18 ,  H05K3/4061 ,  Y10T29/49126 ,  H01L2924/00 ,  B22F7/004 ,  B22F3/26

Abstract: A ceramic wiring substrate and method for manufacturing the same, the substrate having an up-and-down conduction body which is made by forming a porous structure body from a high melting point metal and then infiltrating a low-resistance metal in an up-and-down conduction hole subsequently formed in a substrate made in a plate shape through sintering a ceramic precursor, the conduction body having a normal composite structure without an abnormally grown particle, a void, a crack and the like and not having a problem of falling off from the substrate, as well as provided a semiconductor device using this substrate. An intermediate layer formed of at least one selected from a group of Mo, W, Co, Fe, Zr, Re, Os, Ta, Nb, Ir, Ru and Hf is formed on an inner surface of the up-and-down conduction hole of the substrate before being provided with the conduction body having the composite structure.

Abstract translation: 一种陶瓷布线基板及其制造方法，所述基板具有上下导体，其通过从高熔点金属形成多孔结构体，然后在上下方向上渗入低电阻金属而制成 随后在通过烧结陶瓷前体而制成板状的基板中形成的导通体，导电体具有正常的复合结构，而没有异常生长的颗粒，空隙，裂纹等，并且不具有脱落的问题 并且提供使用该衬底的半导体器件。 在上下传导的内表面上形成由选自Mo，W，Co，Fe，Zr，Re，Os，Ta，Nb，Ir，Ru和Hf中的至少一种形成的中间层 在提供具有复合结构的导体之前，衬底的孔。

公开(公告)号：US20140308536A1

公开(公告)日：2014-10-16

申请号：US14363401

申请日：2012-11-27

Applicant: A.L.M.T. CORP.

Inventor： Gouhei Toyoshima ,  Noboru Uenishi ,  Norihito Goma ,  Satoshi Umemoto ,  Takanori Kadokura ,  Tomohiro Takida ,  Kazunaga Sakakibara

IPC: C22C27/04

CPC classification number: C22C27/04 ,  B22F3/24 ,  B22F5/006 ,  C22C1/045 ,  C22F1/02 ,  C22F1/18 ,  Y10T428/12014

Abstract: There is provided a flat plate-like sintered tungsten alloy that can be molded into a complex shape by press working or forge processing. The flat plate-like sintered tungsten alloy contains 85% by mass or more and 98% by mass or less of W, 1.4% by mass or more and 11% by mass or less of Ni, and 0.6% by mass or more and 6% by mass or less of at least one substance selected from the group consisting of Fe, Cu and Co, wherein an elongation percentage of the flat plate-like sintered tungsten alloy in a planar direction is 20% or more.

Abstract translation: 提供一种平板状烧结钨合金，其可以通过冲压加工或锻造加工成型成复杂形状。 平板状烧结钨合金含有85质量％以上且98质量％以下的W，1.4质量％以上且11质量％以下的Ni，0.6质量％以上且6以下 从Fe，Cu，Co组成的组中选出的至少一种物质的质量％以下，其中平板状烧结钨合金在平面方向的伸长率为20％以上。

公开(公告)号：US20170191148A1

公开(公告)日：2017-07-06

申请号：US15314671

申请日：2015-05-22

Applicant: A.L.M.T. Corp.

Inventor： Ayuri Tsuji ,  Shigekazu Yamazaki ,  Akihiko Ikegaya ,  Noboru Uenishi

IPC: C22C27/04 ,  B23K20/12 ,  B22F3/10 ,  C22C32/00 ,  B22F1/00

Abstract: The present heat-resistant tungsten alloy has a first phase containing W as a major component, a second phase having a carbonitride of at least one element of Ti, Zr and Hf and containing the carbonitride as a major component when W is removed, and a third phase having a carbide of at least one element of group 5A elements in the periodic table and containing the carbide as a major component when W is removed, the heat-resistant tungsten alloy having a Vickers hardness of 550 Hv or more at a room temperature, a displacement of 1 mm or more when leading to fracture, as determined in a three point bending test at 1200° C., and a 0.2% proof stress of 900 MPa or more, as determined in the three point bending test at 1200° C.