公开(公告)号：US20160204240A1

公开(公告)日：2016-07-14

申请号：US15075766

申请日：2016-03-21

Applicant: ABB Technology AG

Inventor： Friedhelm Bauer

IPC: H01L29/745 ,  H01L29/417 ,  H01L29/10 ,  H01L29/08

CPC classification number: H01L29/7455 ,  H01L29/0649 ,  H01L29/0834 ,  H01L29/0839 ,  H01L29/0847 ,  H01L29/1012 ,  H01L29/1095 ,  H01L29/41716 ,  H01L29/749

Abstract: A power semiconductor device is provided comprising: a collector electrode, a collector layer of a second conductivity type, a drift layer of a first conductivity type, a base layer of the second conductivity type, a first insulating layer having an opening, an emitter layer of the first conductivity type, the emitter layer contacts the base layer and separated from the drift layer by one of the first insulating layer or the base layer, a body layer of the second conductivity type arranged laterally to the emitter layer and separated from the base layer by the first insulating layer and the emitter layer, a source region of the first conductivity type separated from the emitter layer by the body layer, an emitter electrode contacted by the source region. The device further comprises a first layer of the second conductivity type contacting the emitter electrode and separated from the base layer, and a second layer of the first conductivity type arranged between the first layer and the base layer and separated from the emitter layer and the source region. A planar MIS gate electrode is arranged laterally from the emitter electrode, a corresponding MIS channel being formable between the source region, the body layer and the emitter layer. A thyristor current path extends between the emitter layer, the base layer and the drift layer through the opening, and a turn-off MIS channel is formable below the planar MIS gate electrode from the first layer, the second layer, the base layer to the drift layer.

Abstract translation: 提供了一种功率半导体器件，包括：集电极电极，第二导电类型的集电极层，第一导电类型的漂移层，第二导电类型的基极层，具有开口的第一绝缘层，发射极层 所述第一导电类型的发射极层与所述基极层接触并且通过所述第一绝缘层或所述基底层之一与所述漂移层分离，所述第二导电类型的主体层横向排列到所述发射极层并与所述基极分离 通过第一绝缘层和发射极层，由主体层与发射极层分离的第一导电类型的源极区域，与源极区域接触的发射极。 该器件还包括第二导电类型的第一层与第二导电类型接触，并与基极层分离，并且第一导电类型的第二层布置在第一层与基极层之间，并与发射极层和源极 地区。 平面MIS栅极电极从发射极侧向设置，相应的MIS沟道可在源极区域，主体层和发射极层之间形成。 晶闸管电流路径通过开口在发射极层，基极层和漂移层之间延伸，并且在第一层，第二层，基底层到第二层 漂移层。

公开(公告)号：US08829563B2

公开(公告)日：2014-09-09

申请号：US13974178

申请日：2013-08-23

Applicant: ABB Technology AG

Inventor： Munaf Rahimo ,  Marco Bellini ,  Maxi Andenna ,  Friedhelm Bauer ,  Iulian Nistor

IPC: H01L29/66 ,  H01L29/08

CPC classification number: H01L29/0813 ,  H01L29/0634 ,  H01L29/0847 ,  H01L29/7395 ,  H01L29/7397

Abstract: An insulated gate bipolar device is disclosed which can include layers of different conductivity types between an emitter electrode on an emitter side and a collector electrode on a collector side in the following order: a source region of a first conductivity type, a base layer of a second conductivity type, which contacts the emitter electrode in a contact area, an enhancement layer of the first conductivity type, a floating compensation layer of the second conductivity type having a compensation layer thickness tp, a drift layer of the first conductivity type having lower doping concentration than the enhancement layer and a collector layer of the second conductivity type.

Abstract translation: 公开了一种绝缘栅极双极器件，其可以包括以下顺序在发射极侧的发射极和集电极侧的集电极之间具有不同导电类型的层：第一导电类型的源极区域，第一导电类型的基极层 在接触区域中与发射极接触的第二导电类型，第一导电类型的增强层，具有补偿层厚度tp的第二导电类型的浮置补偿层，具有较低掺杂的第一导电类型的漂移层 浓度比增强层和第二导电类型的集电极层。

公开(公告)号：US20160190126A1

公开(公告)日：2016-06-30

申请号：US14971206

申请日：2015-12-16

Applicant: ABB Technology AG

Inventor： Friedhelm Bauer ,  Andrei Mihaila

IPC: H01L27/08 ,  H01L29/06 ,  H01L29/10 ,  H01L29/872

CPC classification number: H01L27/0814 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/0688 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/6606 ,  H01L29/872

Abstract: A junction barrier Schottky rectifier with first and second drift layer sections, wherein a peak net doping concentration of the first section is at least two times lower than a minimum net doping concentration of the second section. For each emitter region the first section includes a layer which is in contact with the respective emitter region to form a pn-junction between the first section and the respective emitter region, wherein the thickness of this layer in a direction perpendicular to the interface between the first section and the respective emitter region is at least 0.1 μm. The JBS rectifier has a transition from unipolar to bipolar conduction mode at a lower forward bias due to lowering of electrostatic forces otherwise impairing the transport of electrons toward the emitter regions under forward bias conditions, and with reduced snap-back phenomenon.

Abstract translation: 一种具有第一和第二漂移层部分的结屏障肖特基整流器，其中第一部分的峰值净掺杂浓度比第二部分的最小净掺杂浓度低至少两倍。 对于每个发射极区域，第一部分包括与相应的发射极区域接触以在第一部分和相应的发射极区域之间形成pn结的层，其中该层在垂直于 第一部分和相应的发射极区域至少为0.1μm。 由于静电力的降低，JBS整流器在较低的正向偏压下具有从单极性到双极性导通模式的转变，否则会削弱电子在正向偏置条件下朝向发射极区域的传输，并且具有减少的回跳现象。

公开(公告)号：US20130334566A1

公开(公告)日：2013-12-19

申请号：US13974178

申请日：2013-08-23

Applicant: ABB Technology AG

Inventor： Munaf RAHIMO ,  Marco Bellini ,  Maxi Andenna ,  Friedhelm Bauer ,  Iulian Nistor

IPC: H01L29/739

CPC classification number: H01L29/0813 ,  H01L29/0634 ,  H01L29/0847 ,  H01L29/7395 ,  H01L29/7397

Abstract: An insulated gate bipolar device is disclosed which can include layers of different conductivity types between an emitter electrode on an emitter side and a collector electrode on a collector side in the following order: a source region of a first conductivity type, a base layer of a second conductivity type, which contacts the emitter electrode in a contact area, an enhancement layer of the first conductivity type, a floating compensation layer of the second conductivity type having a compensation layer thickness tp, a drift layer of the first conductivity type having lower doping concentration than the enhancement layer and a collector layer of the second conductivity type.

Abstract translation: 公开了一种绝缘栅极双极器件，其可以包括以下顺序在发射极侧的发射极和集电极侧的集电极之间具有不同导电类型的层：第一导电类型的源极区域，第一导电类型的基极层 在接触区域中与发射极接触的第二导电类型，第一导电类型的增强层，具有补偿层厚度tp的第二导电类型的浮置补偿层，具有较低掺杂的第一导电类型的漂移层 浓度比增强层和第二导电类型的集电极层。