公开(公告)号：US09340870B2

公开(公告)日：2016-05-17

申请号：US13769189

申请日：2013-02-15

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Xiao Bai ,  Zhimin Wan ,  Donald Wayne Berrian

IPC: C23C14/00 ,  C23C14/48 ,  H01J37/147 ,  H01J37/317

CPC classification number: H01J37/1475 ,  C23C14/48 ,  H01J37/3171 ,  H01J2237/152 ,  H01J2237/1526 ,  H01J2237/303 ,  H01J2237/31701 ,  H01J2237/31703

Abstract: The time-averaged ion beam profile of an ion beam for implanting ions on a work piece may be smoothed to reduce noise, spikes, peaks, and the like and to improve dosage uniformity. Auxiliary magnetic field devices, such as electromagnets, may be located along an ion beam path and may be driven by periodic signals to generate a fluctuating magnetic field to smooth the ion beam profile (i.e., beam current density profile). The auxiliary magnetic field devices may be positioned outside the width and height of the ion beam, and may generate a non-uniform fluctuating magnetic field that may be strongest near the center of the ion beam where the highest concentration of ions may be positioned. The fluctuating magnetic field may cause the beam profile shape to change continuously, thereby averaging out noise over time.

Abstract translation: 用于在工件上注入离子的离子束的时间平均离子束轮廓可以被平滑以减少噪声，峰值，峰值等并且改善剂量均匀性。 诸如电磁体的辅助磁场装置可以沿着离子束路径设置，并且可以由周期性信号驱动以产生波动的磁场来平滑离子束轮廓（即，束电流密度分布）。 辅助磁场装置可以位于离子束的宽度和高度之外，并且可以产生在离子束的中心附近可能最强的不均匀的波动磁场，其中可以定位最高浓度的离子。 波动的磁场可能导致光束轮廓形状连续变化，从而使噪声随时间平均化。

公开(公告)号：US10361059B2

公开(公告)日：2019-07-23

申请号：US15097996

申请日：2016-04-13

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Xiao Bai ,  Zhimin Wan ,  Donald Wayne Berrian

IPC: H01J37/147 ,  H01J37/317 ,  C23C14/48

Abstract: The time-averaged ion beam profile of an ion beam for implanting ions on a work piece may be smoothed to reduce noise, spikes, peaks, and the like and to improve dosage uniformity. Auxiliary magnetic field devices, such as electromagnets, may be located along an ion beam path and may be driven by periodic signals to generate a fluctuating magnetic field to smooth the ion beam profile (i.e., beam current density profile). The auxiliary magnetic field devices may be positioned outside the width and height of the ion beam, and may generate a non-uniform fluctuating magnetic field that may be strongest near the center of the ion beam where the highest concentration of ions may be positioned. The fluctuating magnetic field may cause the beam profile shape to change continuously, thereby averaging out noise over time.

公开(公告)号：US09852887B2

公开(公告)日：2017-12-26

申请号：US13975206

申请日：2013-08-23

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Stephen Edward Savas ,  Xiao Bai ,  Zhimin Wan ,  Peter M. Kopalidis

IPC: H01J37/317 ,  H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J2237/0815 ,  H01J2237/0817

Abstract: An ion source uses at least one induction coil to generate ac magnetic field to couple rf/VHF power into a plasma within a vessel, where the excitation coil may be a single set of turns each turn having lobes or multiple separate sets of windings. The excitation coil is positioned outside and proximate that side of the vessel that is opposite to the extraction slit, and elongated parallel to the length dimension of the extraction slit. The conducting shield(s) positioned outside or integrated with the well of the vessel are used to block the capacitive coupling to the plasma and/or to collect any rf/VHF current may be coupled into the plasma. The conducting shield positioned between the vessel and the coil set can either shield the plasma from capacitive coupling from the excitation coils, or be tuned to have a higher rf/VHF voltage to ignite or clean the source.

公开(公告)号：US09748072B2

公开(公告)日：2017-08-29

申请号：US14312617

申请日：2014-06-23

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Zhimin Wan ,  Rekha Padmanabhan ,  Xiao Bai ,  Gary N. Cai ,  Ching-I Li ,  Ger-Pin Lin ,  Shao-Yu Hu ,  David Hoglund ,  Robert E. Kaim ,  Kourosh Saadatmand

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/0835 ,  H01J2237/303 ,  H01J2237/30477

Abstract: In an exemplary process for lower dose rate ion implantation of a work piece, an ion beam may be generated using an ion source and an extraction manipulator. The extraction manipulator may be positioned at a gap distance from an exit aperture of the ion source. A current of the ion beam exiting the extraction manipulator may be maximized when the extraction manipulator is positioned at an optimal gap distance from the exit aperture. The gap distance at which the extraction manipulator is positioned from the exit aperture may differ from the optimal gap distance by at least 10 percent. A first potential may be applied to a first set of electrodes. An x-dimension of the ion beam may increase as the ion beam passes through the first set of electrodes. The work piece may be positioned in the ion beam to implant ions into the work piece.

公开(公告)号：US20150056380A1

公开(公告)日：2015-02-26

申请号：US13975206

申请日：2013-08-23

Applicant: ADVANCED ION BEAM TECHNOLOGY , INC.

Inventor： Stephen Edward Savas ,  Xiao Bai ,  Zhimin Wan ,  Peter M. Kopalidis

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J2237/0815 ,  H01J2237/0817

Abstract: An ion source uses at least one induction coil to generate ac magnetic field to couple rf/VHF power into a plasma within a vessel, where the excitation coil may be a single set of turns each turn having lobes or multiple separate sets of windings. The excitation coil is positioned outside and proximate that side of the vessel that is opposite to the extraction slit, and elongated parallel to the length dimension of the extraction slit. The conducting shield(s) positioned outside or integrated with the well of the vessel are used to block the capacitive coupling to the plasma and/or to collect any rf/VHF current may be coupled into the plasma. The conducting shield positioned between the vessel and the coil set can either shield the plasma from capacitive coupling from the excitation coils, or be tuned to have a higher rf/VHF voltage to ignite or clean the source.

Abstract translation: 离子源使用至少一个感应线圈来产生交流磁场，以将rf / VHF功率耦合到容器内的等离子体中，其中所述激励线圈可以是单一组的匝，每一匝具有凸角或多个单独的绕组组。 励磁线圈位于与抽出狭缝相对的容器的外侧和附近，并且平行于提取狭缝的长度尺寸延伸。 位于外部或与容器的阱集成在一起的导电屏蔽用于阻挡与等离子体的电容耦合和/或收集任何rf / VHF电流可以耦合到等离子体中。 位于容器和线圈组之间的导电屏蔽件可以屏蔽来自激励线圈的电容耦合的等离子体，或者被调谐为具有较高的rf / VHF电压以点燃或清洁源极。