公开(公告)号：US20160122696A1

公开(公告)日：2016-05-05

申请号：US14891542

申请日：2014-05-14

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.

Inventor： Jun LIU ,  Laisheng SUN

IPC: C11D11/00 ,  H01L21/02 ,  C11D3/33 ,  C11D3/20 ,  C11D1/00 ,  C11D3/30

CPC classification number: C11D11/0047 ,  C11D1/008 ,  C11D3/0042 ,  C11D3/2072 ,  C11D3/2086 ,  C11D3/2096 ,  C11D3/30 ,  C11D3/33 ,  H01L21/02057 ,  H01L21/02065

Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The removal compositions include at least one surfactant. The composition achieves highly efficacious removal of the ceria particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.

Abstract translation: 用于从其上具有所述颗粒和污染物的微电子装置清洁化学后机械抛光（CMP）污染物和二氧化铈颗粒的去除组合物和方法。 去除组合物包括至少一种表面活性剂。 该组合物在不损害低k电介质，氮化硅或含钨材料的情况下实现了从微电子器件的表面高度有效地去除二氧化铈颗粒和CMP污染物质。

公开(公告)号：US20160237385A1

公开(公告)日：2016-08-18

申请号：US15137552

申请日：2016-04-25

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.

Inventor： Jeffrey A. BARNES ,  Jun LIU ,  Peng ZHANG

IPC: C11D11/00 ,  C11D3/20 ,  B08B7/04 ,  H01L21/02 ,  B08B3/08 ,  B08B3/10 ,  C11D3/04 ,  C11D3/33

CPC classification number: C11D11/0047 ,  B08B3/08 ,  B08B3/10 ,  B08B7/04 ,  C11D3/044 ,  C11D3/2041 ,  C11D3/2044 ,  C11D3/2065 ,  C11D3/2075 ,  C11D3/2086 ,  C11D3/2096 ,  C11D3/33 ,  C11D3/43 ,  C11D7/06 ,  C11D7/08 ,  C11D7/265 ,  C11D7/267 ,  C11D7/3245 ,  C11D7/50 ,  C11D7/5004 ,  C11D7/5022 ,  H01L21/0206 ,  H01L21/02065 ,  H01L21/02068 ,  H01L21/02074

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of amine and ammonium-containing compounds, e.g., quaternary ammonium bases. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

Abstract translation: 一种清洁组合物和用于从具有所述残余物和污染物的微电子装置清洁后化学机械抛光（CMP）残留物和污染物的清洁组合物和方法。 清洁组合物基本上不含胺和铵的化合物，例如季铵碱。 该组合物可以在不影响低k电介质材料或铜互连材料的情况下从微电子器件的表面高效地清洁后CMP残留物和污染物质。

公开(公告)号：US20140352739A1

公开(公告)日：2014-12-04

申请号：US14305786

申请日：2014-06-16

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.

Inventor： Jeffrey A. BARNES ,  Jun LIU ,  Peng ZHANG

IPC: C11D11/00 ,  C11D7/26 ,  C11D7/08 ,  C11D7/32 ,  C11D7/50 ,  C11D7/06

CPC classification number: C11D11/0047 ,  B08B3/08 ,  B08B3/10 ,  B08B7/04 ,  C11D3/044 ,  C11D3/2041 ,  C11D3/2044 ,  C11D3/2065 ,  C11D3/2075 ,  C11D3/2086 ,  C11D3/2096 ,  C11D3/33 ,  C11D3/43 ,  C11D7/06 ,  C11D7/08 ,  C11D7/265 ,  C11D7/267 ,  C11D7/3245 ,  C11D7/50 ,  C11D7/5004 ,  C11D7/5022 ,  H01L21/0206 ,  H01L21/02065 ,  H01L21/02068 ,  H01L21/02074

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of amine and ammonium-containing compounds, e.g., quaternary ammonium bases. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

Abstract translation: 一种清洁组合物和用于从具有所述残余物和污染物的微电子装置清洁后化学机械抛光（CMP）残留物和污染物的清洁组合物和方法。 清洁组合物基本上不含胺和铵的化合物，例如季铵碱。 该组合物可以在不影响低k电介质材料或铜互连材料的情况下从微电子器件的表面高效地清洁后CMP残留物和污染物质。

公开(公告)号：US20160340620A1

公开(公告)日：2016-11-24

申请号：US15115165

申请日：2015-01-29

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  ATMI TAIWAN CO., LTD.

Inventor： Laisheng SUN ,  Peng ZHANG ,  Jun LIU ,  Steven MEDD ,  Jeffrey A. BARNES ,  Shrane Ning JENQ

IPC: C11D11/00 ,  H01L21/02 ,  C11D3/30 ,  C11D1/62 ,  C11D3/00

CPC classification number: C11D11/0047 ,  C11D1/62 ,  C11D3/0073 ,  C11D3/30 ,  C11D7/32 ,  C11D7/3209 ,  C23G1/20 ,  H01L21/02063 ,  H01L21/02065 ,  H01L21/02074

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

Abstract translation: 一种清洁组合物和用于从具有所述残余物和污染物的微电子装置清洁后化学机械抛光（CMP）残留物和污染物的清洁组合物和方法。 清洁组合物基本上不含碱金属氢氧化物，碱土金属氢氧化物和四甲基氢氧化铵。 该组合物可以在不影响低k电介质材料或铜互连材料的情况下从微电子器件的表面高效地清洁后CMP残留物和污染物质。