公开(公告)号：US20250076748A1

公开(公告)日：2025-03-06

申请号：US18948779

申请日：2024-11-15

Applicant: AGC Inc.

Inventor： Yusuke ONO ,  Hiroaki IWAOKA ,  Taiga FUDETANI

IPC: G03F1/24

Abstract: A reflective mask blank for EUV lithography, includes: a substrate; a conductive film disposed on or above a back surface of the substrate; a reflective layer disposed on or above a front surface of the substrate, the reflective layer reflecting EUV light; and an absorption layer disposed on or above the reflective layer, the absorption layer absorbing the EUV light.

公开(公告)号：US20240160097A1

公开(公告)日：2024-05-16

申请号：US18544970

申请日：2023-12-19

Applicant: AGC INC.

Inventor： Hiroshi HANEKAWA ,  Taiga FUDETANI ,  Yusuke ONO ,  Shunya TAKI

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective mask blank includes: a substrate; a multilayer reflective film configured to reflect EUV light; a protective film; and a phase shift film configured to shift a phase of EUV light, in this order, in which the phase shift film includes a first layer including one or more first elements selected from a group consisting of ruthenium, rhenium, iridium, silver, osmium, gold, palladium, and platinum, and a second layer including one or more second elements selected from a group consisting of tantalum and chromium, the first layer includes a region A1 in which a content of an element having a highest content among the one or more first elements increases in a thickness direction from a side opposite to the second layer toward the second layer, and the region A1 is present adjacent to the second layer.

公开(公告)号：US20250036020A1

公开(公告)日：2025-01-30

申请号：US18911231

申请日：2024-10-09

Applicant: AGC Inc.

Inventor： Wataru NISHIDA ,  Daijiro AKAGI ,  Hiroaki IWAOKA ,  Hiroshi HANEKAWA ,  Taiga FUDETANI ,  Masaru HORI ,  Takayoshi TSUTSUMI

IPC: G03F1/24 ,  G03F1/48 ,  G03F1/52 ,  G03F1/54

Abstract: A reflective mask blank includes: a substrate, a multilayer reflective film including molybdenum layers and silicon layers alternately and being configured to reflect EUV light, an intermediate film, a protective film, and an absorber film, in this order, in which the intermediate film includes silicon and nitrogen, an atomic weight ratio of a content of the nitrogen to a content of the silicon is 0.22 to 0.40 or 0.15 or less, the protective film includes one or more layers selected from the group consisting of a layer including rhodium and a layer including a rhodium-containing material, and the rhodium-containing material includes rhodium and one or more elements selected from the group consisting of boron, carbon, nitrogen, oxygen, silicon, titanium, zirconium, niobium, molybdenum, ruthenium, palladium, tantalum, and iridium.