公开(公告)号：US20240184191A1

公开(公告)日：2024-06-06

申请号：US18439057

申请日：2024-02-12

Applicant: AGC INC.

Inventor： Yusuke ONO ,  Hiroshi HANEKAWA ,  Hirotomo KAWAHARA

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective mask blank for EUV lithography, includes: a substrate; a conductive film; a reflective layer; and an absorption layer, the absorption layer absorbing the EUV light, wherein the conductive film has a refractive index nλ1000-1100 nm of 5.300 or less and has an extinction coefficient kλ1000-1100 nm of 5.200 or less, at a wavelength of 1000 nm to 1100 nm, the conductive film has a refractive index nλ600-700 nm of 4.300 or less and has an extinction coefficient kλ600-700 nm of 4.500 or less, at a wavelength of 600 nm to 700 nm, the conductive film has a refractive index nλ400-500 nm of 2.500 or more and has an extinction coefficient kλ400-500 nm of 0.440 or more, at a wavelength of 400 nm to 500 nm, and the conductive film has a film thickness t of 40 nm to 350 nm.

公开(公告)号：US20240280890A1

公开(公告)日：2024-08-22

申请号：US18648522

申请日：2024-04-29

Applicant: AGC Inc.

Inventor： Takuma KATO ,  Daijiro AKAGI ,  Takeshi OKATO ,  Ryusuke OISHI ,  Yusuke ONO

IPC: G03F1/24 ,  G03F1/48 ,  G03F1/52 ,  G03F1/54 ,  G03F1/78 ,  G03F1/80

CPC classification number: G03F1/24 ,  G03F1/48 ,  G03F1/52 ,  G03F1/54 ,  G03F1/78 ,  G03F1/80

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light, in this order. The protection film contains 50 at % or more of Rh. When a band-shaped gray scale image parallel to an interface between the protection film and the multilayer reflective film is obtained by imaging a cross section of the protection film with a transmission electron microscope (TEM) and a luminance profile of the gray scale image in a longitudinal direction of the gray scale image is created, a number of peaks of the luminance profile per 100 nm in the longitudinal direction of the gray scale image is 50 or more.

公开(公告)号：US20240160097A1

公开(公告)日：2024-05-16

申请号：US18544970

申请日：2023-12-19

Applicant: AGC INC.

Inventor： Hiroshi HANEKAWA ,  Taiga FUDETANI ,  Yusuke ONO ,  Shunya TAKI

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective mask blank includes: a substrate; a multilayer reflective film configured to reflect EUV light; a protective film; and a phase shift film configured to shift a phase of EUV light, in this order, in which the phase shift film includes a first layer including one or more first elements selected from a group consisting of ruthenium, rhenium, iridium, silver, osmium, gold, palladium, and platinum, and a second layer including one or more second elements selected from a group consisting of tantalum and chromium, the first layer includes a region A1 in which a content of an element having a highest content among the one or more first elements increases in a thickness direction from a side opposite to the second layer toward the second layer, and the region A1 is present adjacent to the second layer.

公开(公告)号：US20240045320A1

公开(公告)日：2024-02-08

申请号：US18382356

申请日：2023-10-20

Applicant: AGC Inc.

Inventor： Takuma KATO ,  Daijiro AKAGI ,  Takeshi OKATO ,  Ryusuke OISHI ,  Yusuke ONO

IPC: G03F1/24 ,  G03F1/54 ,  G03F1/52 ,  G03F1/48 ,  G03F1/78 ,  G03F1/80

CPC classification number: G03F1/24 ,  G03F1/54 ,  G03F1/52 ,  G03F1/48 ,  G03F1/78 ,  G03F1/80

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light, in this order. The protection film contains 50 at % or more of Rh. When a band-shaped gray scale image parallel to an interface between the protection film and the multilayer reflective film is obtained by imaging a cross section of the protection film with a transmission electron microscope (TEM) and a luminance profile of the gray scale image in a longitudinal direction of the gray scale image is created, a number of peaks of the luminance profile per 100 nm in the longitudinal direction of the gray scale image is 50 or more.

公开(公告)号：US20250076748A1

公开(公告)日：2025-03-06

申请号：US18948779

申请日：2024-11-15

Applicant: AGC Inc.

Inventor： Yusuke ONO ,  Hiroaki IWAOKA ,  Taiga FUDETANI

IPC: G03F1/24

Abstract: A reflective mask blank for EUV lithography, includes: a substrate; a conductive film disposed on or above a back surface of the substrate; a reflective layer disposed on or above a front surface of the substrate, the reflective layer reflecting EUV light; and an absorption layer disposed on or above the reflective layer, the absorption layer absorbing the EUV light.