-
公开(公告)号：US20210325772A1
公开(公告)日：2021-10-21
申请号：US17235220
申请日：2021-04-20
Applicant: AGC Inc.
Inventor： Hirotomo KAWAHARA , Hiroyoshi TANABE , Toshiyuki UNO , Hiroshi HANEKAWA , Daijiro AKAGI
IPC: G03F1/24
Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.
-
公开(公告)号：US20220236636A1
公开(公告)日：2022-07-28
申请号：US17658763
申请日：2022-04-11
Applicant: AGC INC.
Inventor： Hiroyoshi TANABE , Hiroshi HANEKAWA , Toshiyuki UNO
Abstract: A reflective mask blank includes a substrate and, on or above the substrate in order, a reflective layer for reflecting EUV light, a protective layer for protecting the reflective layer, and an absorbent layer for absorbing EUV light. The absorbent layer has a reflectance for a wavelength of 13.53 nm of from 2.5% to 10%. A film thickness d of the absorbent layer satisfies a relationship of: d M A X - ( i × 6 + 1 ) nm ≤ d ≤ d M A X - ( i × 6 - 1 ) nm where the integer i is 0 or 1, and dMAX is represented by: d M A X ( nm ) = 1 3 . 5 3 2 n cos 6 ° { INT ( 0 . 5 8 1 - n ) + 1 2 π ( tan - 1 ( - k 1 - n ) + 0 . 6 4 ) } where n is a refractive index of the absorbent layer, k is an absorption coefficient of the absorbent layer, and INT(x) is a function of returning an integer value obtained by truncating a decimal part.
-
3.发明申请公开(公告)号：US20190384156A1
公开(公告)日：2019-12-19
申请号：US16432499
申请日：2019-06-05
Applicant: AGC Inc.
Inventor： Hiroyoshi TANABE
Abstract: A reflective mask blank has a reflective layer to reflect EUV light and an absorber layer to absorb the EUV light, formed over a substrate in this order from a substrate side. The absorber layer contains Sn, and a preventive layer is provided over the absorber layer, to prevent oxidation of the absorber layer.
-
公开(公告)号：US20220187699A1
公开(公告)日：2022-06-16
申请号：US17541795
申请日：2021-12-03
Applicant: AGC Inc.
Inventor： Hiroyoshi TANABE
IPC: G03F1/24 , G03F1/58 , H01L21/033
Abstract: A reflective mask blank for EUVL, includes a substrate; a multilayer reflective film reflecting EUV light; an absorber film absorbing EUV light; and an antireflective film. The multilayer reflective film, the absorber film, and the antireflective film are formed on or above the substrate in this order. The antireflective film includes an aluminum alloy containing aluminum (Al), and at least one metallic element selected from the group consisting of tantalum (Ta), chromium (Cr), titanium (Ti), niobium (Nb), molybdenum (Mo), tungsten (W), and ruthenium (Ru). The aluminum alloy further contains at least one element (X) selected from the group consisting of oxygen (O), nitrogen (N), and boron (B). An aluminum (Al) content of component of the aluminum alloy excluding the element (X) is greater than or equal to 3 at % and less than or equal to 95 at %.
-
5.发明申请公开(公告)号：US20190086791A1
公开(公告)日：2019-03-21
申请号：US16131560
申请日：2018-09-14
Applicant: AGC INC.
Inventor： Hiroyoshi TANABE
IPC: G03F1/24
Abstract: A reflective mask blank includes, on/above a substrate in the following order from the substrate side, a reflective layer which reflects EUV light, and an absorber layer which absorbs EUV light. The absorber layer contains Sn as a main component and Ta in an amount of 25 at % or more.
-
Patent Agency Ranking
公开(公告)号：US20230305383A1
公开(公告)日：2023-09-28
申请号：US18201705
申请日：2023-05-24
Applicant: AGC Inc.
Inventor： Hirotomo KAWAHARA , Hiroyoshi TANABE , Toshiyuki UNO , Hiroshi HANEKAWA , Daijiro AKAGI
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.
-
公开(公告)号：US20220163879A1
公开(公告)日：2022-05-26
申请号：US17666290
申请日：2022-02-07
Applicant: AGC Inc.
Inventor： Hiroyoshi TANABE
Abstract: A reflective mask blank includes a multilayer reflective film, and a pattern film to be partially etched when processing into a mask. The multilayer reflective film and the pattern film are placed on/above a substrate in this order from the substrate side. The pattern film includes an absorber film and a surface reflection enhancing film in this order from the substrate side. The relation of ((n−1)2+k2)1/2>((nABS−1)2+kABS2)1/2+0.03 is satisfied, nABS and kABS being a reflective index and an absorption coefficient of the absorber film at a wavelength of 13.53 nm, respectively, and n and k being a reflective index and an absorption coefficient of the surface reflection enhancing film at a wavelength of 13.53 nm, respectively.
-
公开(公告)号：US20210349387A1
公开(公告)日：2021-11-11
申请号：US17380641
申请日：2021-07-20
Applicant: AGC Inc.
Inventor： Hiroyoshi TANABE , Takahira MIYAGI
Abstract: A reflective mask blank includes a substrate and, disposed on or above the substrate in the following order from the substrate side, a reflective layer, a protective layer, and an absorbent layer. The reflective layer is a multilayered reflective film includes a plurality of cycles, each cycle including a high-refractive-index layer and a low-refractive-index layer. The reflective layer includes one phase inversion layer which is either the high-refractive-index layer or the low-refractive-index layer each having a film thickness increased by Δd ([unit: nm]). The increase in film thickness Δd [unit: nm] of the phase inversion layer satisfies a relationship: (¼+m/2)×13.53−1.0≤Δd≤(¼+m/2)×13.53+1.0. The reflective layer and the absorbent layer satisfy a relationship: Tabs+80 tanh(0.037NML)−1.6 exp(−0.08Ntop)(NML−Ntop)2
-
公开(公告)号：US20240176225A1
公开(公告)日：2024-05-30
申请号：US18417352
申请日：2024-01-19
Applicant: AGC INC.
Inventor： Hiroyoshi TANABE , Hiroshi HANEKAWA , Toshiyuki UNO
Abstract: A reflective mask blank includes a substrate and, on or above the substrate in order, a reflective layer for reflecting EUV light, a protective layer for protecting the reflective layer, and an absorbent layer for absorbing EUV light. The absorbent layer has a reflectance for a wavelength of 13.53 nm of from 2.5% to 10% and consists of a lower absorption layer and an upper absorption layer. A film thickness dbi of the absorbent layer satisfies a relationship of:
dbi MAX−(i×6+1) nm≤dbi≤dbi MAX−(i×6−1) nm
where the integer i is 0 or 1, and dbi MAX is represented by:
d
bi
MAX
(
nm
)
=
13.53
2
n
cos
6
°
{
INT
(
0.58
1
-
n
1
)
+
1
2
π
(
tan
-
1
(
-
k
2
1
-
n
2
)
+
0.64
)
}
,
where n1 is a refractive index of the lower absorbent layer, n2 is a refractive index of the upper absorbent layer, k2 is an absorption coefficient of the upper absorbent layer, and INT(x) is a function of returning an integer value obtained by truncating a decimal part.-
10.发明公开公开(公告)号：US20230185181A1
公开(公告)日：2023-06-15
申请号：US18166715
申请日：2023-02-09
Applicant: AGC Inc.
Inventor： Hiroyoshi TANABE
Abstract: A reflective mask blank includes a substrate, and a multilayer reflective film configured to reflect EUV light, a phase shift film configured to shift a phase of the EUV light, and a semi-light-shielding film configured to shield the EUV light, which are formed on the substrate in this order. A reflectance at a wavelength of 13.5 nm when a surface of the semi-light-shielding film is irradiated with the EUV light is less than 7%. A reflectance at a wavelength of 13.5 nm when a surface of the phase shift film is irradiated with the EUV light is 9% or more and less than 15%.
-
-
-
-
-
-
-
-
-
Search Results
11
records
(took 0.013 seconds)
