公开(公告)号：US12001133B2

公开(公告)日：2024-06-04

申请号：US18382356

申请日：2023-10-20

申请人： AGC Inc.

发明人： Takuma Kato ,  Daijiro Akagi ,  Takeshi Okato ,  Ryusuke Oishi ,  Yusuke Ono

IPC分类号： G03F1/24 ,  G03F1/48 ,  G03F1/52 ,  G03F1/54 ,  G03F1/78 ,  G03F1/80

CPC分类号： G03F1/24 ,  G03F1/48 ,  G03F1/52 ,  G03F1/54 ,  G03F1/78 ,  G03F1/80

摘要： A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light, in this order. The protection film contains 50 at % or more of Rh. When a band-shaped gray scale image parallel to an interface between the protection film and the multilayer reflective film is obtained by imaging a cross section of the protection film with a transmission electron microscope (TEM) and a luminance profile of the gray scale image in a longitudinal direction of the gray scale image is created, a number of peaks of the luminance profile per 100 nm in the longitudinal direction of the gray scale image is 50 or more.

公开(公告)号：US12124164B2

公开(公告)日：2024-10-22

申请号：US18621502

申请日：2024-03-29

申请人： AGC Inc.

发明人： Daijiro Akagi ,  Takuma Kato ,  Keishi Tsukiyama ,  Toshiyuki Uno ,  Hiroshi Hanekawa ,  Ryusuke Oishi ,  Sadatatsu Ikeda ,  Yukihiro Iwata ,  Chikako Hanzawa

IPC分类号： G03F1/24 ,  G03F1/48

CPC分类号： G03F1/24 ,  G03F1/48

摘要： A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.