-
公开(公告)号：US20230350284A1
公开(公告)日：2023-11-02
申请号：US18219452
申请日：2023-07-07
申请人： AGC INC.
发明人： Yusuke Ono , Hiroshi Hanekawa , Hirotomo Kawahara
CPC分类号： G03F1/24 , G03F7/70058
摘要： A reflective mask blank for EUV lithography, includes: a substrate; a conductive film; a reflective layer; and an absorption layer, the absorption layer absorbing the EUV light, wherein the conductive film has a refractive index nλ1000-1100 nm of 5.300 or less and has an extinction coefficient kλ1000-1100 nm of 5.200 or less, at a wavelength of 1000 nm to 1100 nm, the conductive film has a refractive index nλ600-700 nm of 4.300 or less and has an extinction coefficient kλ600-700 nm of 4.500 or less, at a wavelength of 600 nm to 700 nm, the conductive film has a refractive index nλ400-500 nm of 2.500 or more and has an extinction coefficient kλ400-500 nm of 0.440 or more, at a wavelength of 400 nm to 500 nm, and the conductive film has a film thickness t of 40 nm to 350 nm.
-
公开(公告)号：US12038685B2
公开(公告)日：2024-07-16
申请号：US18201705
申请日：2023-05-24
申请人： AGC Inc.
IPC分类号： G03F1/24
CPC分类号： G03F1/24
摘要： A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.
-
公开(公告)号：US11036127B2
公开(公告)日：2021-06-15
申请号：US16056765
申请日：2018-08-07
申请人： AGC INC.
摘要： A reflective mask blank includes a backside conductive film on a back surface of a substrate. The backside conductive film has a laminated structure including a stress compensation layer and a conductive layer in this order from the substrate side. The conductive layer includes a metal nitride. The stress compensation layer has a compressive stress and the stress compensation layer includes at least one compound selected from the group consisting of oxides, oxynitrides, and nitrides, each having an absorption coefficient (k) over the wavelength range of 400 nm to 800 nm being 0.1 or less. The conductive layer has a thickness of 5 nm or more and 30 nm or less. The backside conductive film has a total thickness of 50 nm or more.
-
公开(公告)号：US12124164B2
公开(公告)日：2024-10-22
申请号：US18621502
申请日：2024-03-29
申请人： AGC Inc.
发明人： Daijiro Akagi , Takuma Kato , Keishi Tsukiyama , Toshiyuki Uno , Hiroshi Hanekawa , Ryusuke Oishi , Sadatatsu Ikeda , Yukihiro Iwata , Chikako Hanzawa
摘要： A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.
-
公开(公告)号：US11150550B2
公开(公告)日：2021-10-19
申请号：US16056786
申请日：2018-08-07
申请人： AGC INC.
摘要： A reflective mask blank includes, on/above a substrate in the following order from the substrate side a multilayer reflective film which reflects EUV light and an absorber film which absorbs EUV light. The absorber film is a tantalum-based material film containing a tantalum-based material. The absorber film provides a peak derived from the tantalum-based material in an X-ray diffraction pattern, the peak having a peak diffraction angle (2θ) of 36.8 degrees or more and a full width at half maximum of 1.5 degrees or more.
-
公开(公告)号：US10241390B2
公开(公告)日：2019-03-26
申请号：US15424176
申请日：2017-02-03
申请人： AGC Inc.
发明人： Hiroshi Hanekawa
IPC分类号： G03F1/24 , H01L21/033
摘要： To provide a reflective mask blank having pseudo defects significantly excluded. The reflective mask blank comprises a substrate, a reflective layer for reflecting EUV light, formed on the substrate, and an absorber layer for absorbing EUV light, formed on the reflective layer, wherein Ssk
-
公开(公告)号：US11934093B2
公开(公告)日：2024-03-19
申请号：US18219452
申请日：2023-07-07
申请人： AGC INC.
发明人： Yusuke Ono , Hiroshi Hanekawa , Hirotomo Kawahara
IPC分类号： G03F1/24
CPC分类号： G03F1/24
摘要： A reflective mask blank for EUV lithography, includes: a substrate; a conductive film; a reflective layer; and an absorption layer, the absorption layer absorbing the EUV light, wherein the conductive film has a refractive index nλ1000-1100 nm of 5.300 or less and has an extinction coefficient kλ1000-1100 nm of 5.200 or less, at a wavelength of 1000 nm to 1100 nm, the conductive film has a refractive index nλ600-700 nm of 4.300 or less and has an extinction coefficient kλ600-700 nm of 4.500 or less, at a wavelength of 600 nm to 700 nm, the conductive film has a refractive index nλ400-500 nm of 2.500 or more and has an extinction coefficient kλ400-500 nm of 0.440 or more, at a wavelength of 400 nm to 500 nm, and the conductive film has a film thickness t of 40 nm to 350 nm.
-
公开(公告)号：US11703751B2
公开(公告)日：2023-07-18
申请号：US17463724
申请日：2021-09-01
申请人： AGC INC.
摘要： A reflective mask blank includes, on/above a substrate in the following order from the substrate side a multilayer reflective film which reflects EUV light and an absorber film which absorbs EUV light. The absorber film is a tantalum-based material film containing a tantalum-based material. The absorber film provides a peak derived from the tantalum-based material in an X-ray diffraction pattern, the peak having a peak diffraction angle (2θ) of 36.8 degrees or more and a full width at half maximum of 1.5 degrees or more.
-
公开(公告)号：US11698580B2
公开(公告)日：2023-07-11
申请号：US17235220
申请日：2021-04-20
申请人： AGC Inc.
IPC分类号： G03F1/24
CPC分类号： G03F1/24
摘要： A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.
-
公开(公告)号：US12032280B2
公开(公告)日：2024-07-09
申请号：US18544970
申请日：2023-12-19
申请人： AGC INC.
发明人： Hiroshi Hanekawa , Taiga Fudetani , Yusuke Ono , Shunya Taki
摘要： A reflective mask blank includes: a substrate; a multilayer reflective film configured to reflect EUV light; a protective film; and a phase shift film configured to shift a phase of EUV light, in this order, in which the phase shift film includes a first layer including one or more first elements selected from a group consisting of ruthenium, rhenium, iridium, silver, osmium, gold, palladium, and platinum, and a second layer including one or more second elements selected from a group consisting of tantalum and chromium, the first layer includes a region A1 in which a content of an element having a highest content among the one or more first elements increases in a thickness direction from a side opposite to the second layer toward the second layer, and the region A1 is present adjacent to the second layer.
-
-
-
-
-
-
-
-
-
搜索结果
12 条记录 (耗时 0.015 秒)
