公开(公告)号：US10453511B2

公开(公告)日：2019-10-22

申请号：US16079511

申请日：2017-02-16

Applicant: Agency for Science, Technology and Research

Inventor： Sunny Yan Hwee Lua ,  Aarthy Mani

IPC: G11C11/16 ,  H03K3/45 ,  H01L27/22 ,  H01L43/02

Abstract: Various embodiments may provide a circuit arrangement. The circuit arrangement may include a first spin-orbit torque magnetic tunnel junction cell, a second spin-orbit torque magnetic tunnel junction cell, a first driver circuit arrangement, a second driver circuit arrangement, and a read circuit arrangement. The circuit arrangement allows for the operation of a non-volatile flip-flop based on spin-orbit torque effect.

公开(公告)号：US20220222513A1

公开(公告)日：2022-07-14

申请号：US17638748

申请日：2019-09-03

Applicant: Agency for Science, Technology and Research

Inventor： Vishnu Paramasivam ,  Anh Tuan Do ,  Eng Kiat Koh ,  Junran Pu ,  Fei Li ,  Aarthy Mani

IPC: G06N3/063 ,  G06N3/04

Abstract: There is provided a neural network processor system including: a plurality of neural processing units, including a first neural processing unit and a second neural processing unit, whereby each neural processing unit comprises an array of neural processing core blocks, each neural processing core block comprising a neural processing core; and at least one central processing unit communicatively coupled to the plurality of neural processing units and configured to coordinate the plurality of neural processing units for performing neural network computations. In particular, the first and second neural processing units have a different structural configuration to each other. There is also provided a corresponding method of operating and a corresponding method of forming the neural network processor system.

公开(公告)号：US11978506B2

公开(公告)日：2024-05-07

申请号：US18039414

申请日：2020-12-10

Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH

Inventor： Di Zhu ,  Kevin Tshun Chuan Chai ,  Aarthy Mani ,  Anh Tuan Do

IPC: G11C11/418 ,  G02F1/133 ,  G02F1/1343 ,  G02F1/1368 ,  G09G3/36

CPC classification number: G11C11/418 ,  G02F1/13306 ,  G02F1/13439 ,  G02F1/1368 ,  G09G3/3648 ,  G02F2203/12 ,  G09G2300/0857 ,  G09G2310/08

Abstract: This document describes a spatial light modulator that comprises a pixel array having a plurality of pixels whereby each pixel in this array is communicatively coupled to a digital pixel circuit which are in turn all coupled to a bit-plane control circuit. The bit-plane control circuit is configured to generate, using a Pulse Code Modulation (PCM) algorithm, bit-plane signals that are used to control the sample and hold functions performed by each of the digital pixel circuits so that the pixel array may carry out its scanning function accurately and in a power efficient manner.

公开(公告)号：US20190057731A1

公开(公告)日：2019-02-21

申请号：US16079511

申请日：2017-02-16

Applicant: Agency for Science, Technology and Research

Inventor： Sunny Yan Hwee Lua ,  Aarthy Mani

IPC: G11C11/16 ,  H01L43/02 ,  H01L27/22

CPC classification number: G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  G11C11/1697 ,  H01L27/228 ,  H01L43/02 ,  H03K3/45

Abstract: Various embodiments may provide a circuit arrangement. The circuit arrangement may include a first spin-orbit torque magnetic tunnel junction cell, a second spin-orbit torque magnetic tunnel junction cell, a first driver circuit arrangement, a second driver circuit arrangement, and a read circuit arrangement. The circuit arrangement allows for the operation of a non-volatile flip-flop based on spin-orbit torque effect.

公开(公告)号：US20130343117A1

公开(公告)日：2013-12-26

申请号：US13708872

申请日：2012-12-07

Applicant: Agency for Science, Technology and Research

Inventor： Yan Hwee Sunny Lua ,  Aarthy Mani

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1697

Abstract: According to embodiments of the present invention, a writing circuit for a magnetoresistive memory cell is provided. The writing circuit includes a first connecting terminal configured to provide a first electrical signal to switch a variable magnetization orientation of the free magnetic layer from a first magnetization orientation to a second magnetization orientation; a second connecting terminal configured to provide a second electrical signal to switch the magnetization orientation from the second magnetization orientation to the first magnetization orientation; and a sourcing switch configured to provide for a write operation a connection of the first or second connecting terminal to a node coupleable to the magnetoresistive memory cell. The first and second electrical signals have different amplitudes, and the first and second electrical signals are of the same polarity. Further embodiments relate to a memory cell arrangement and a method of writing into a target magnetoresistive memory cell.

Abstract translation: 根据本发明的实施例，提供了一种用于磁阻存储单元的写入电路。 写入电路包括第一连接端子，其被配置为提供第一电信号以将自由磁性层的可变磁化取向从第一磁化取向切换到第二磁化取向; 第二连接端子，被配置为提供第二电信号以将磁化取向从第二磁化取向切换到第一磁化取向; 以及源极开关，被配置为向写入操作提供第一或第二连接端子与可耦合到磁阻存储器单元的节点的连接。 第一和第二电信号具有不同的幅度，并且第一和第二电信号具有相同的极性。 另外的实施例涉及存储单元布置和写入目标磁阻存储单元的方法。