公开(公告)号：US20230084844A1

公开(公告)日：2023-03-16

申请号：US17799295

申请日：2021-02-17

Applicant: AMS-OSRAM International GmbH

Inventor： Fabian KOPP ,  Attila MOLNAR ,  Lutz HOEPPEL

IPC: H01L33/60

Abstract: An optoelectronic semiconductor device may include a carrier comprising a patterned surface and a semiconductor layer sequence arranged on the carrier. The semiconductor layer sequence may include a first semiconductor layer having a first surface, a second semiconductor layer having a first surface, and a first main surface and a second main surface opposite the first main surface. The first surfaces of the first and second semiconductor layers may be at least partly arranged at the first main surface. The second main surface may face the patterned surface of the carrier, and at least one side face may connect the first and second main surfaces. The device may further include a directionally reflective layer and a planarization layer. The planarization layer may be arranged between the patterned surface and the directionally reflective layer. Moreover, a method for producing an optoelectronic semiconductor device is also disclosed.

公开(公告)号：US20240332901A1

公开(公告)日：2024-10-03

申请号：US18576609

申请日：2022-06-29

Applicant: AMS-OSRAM International GmbH

Inventor： Hubert HALBRITTER ,  Lutz HOEPPEL ,  Sven GERHARD

IPC: H01S5/183 ,  H01S5/32 ,  H01S5/323

CPC classification number: H01S5/18311 ,  H01S5/18347 ,  H01S5/18361 ,  H01S5/3211 ,  H01S5/32341

Abstract: The invention relates to a surface-emitting semiconductor laser, including a first semiconductor layer of a first conductivity type, the first semiconductor layer being structured forming a mesa, an active zone for generating electromagnetic radiation and a second semiconductor layer of a second conductivity type. The first semiconductor layer, the active zone and the second semiconductor layer are arranged on top of one another forming a semiconductor layer stack. The surface-emitting semiconductor laser further comprises a sheath layer which adjoins a lateral wall of the mesa.