-
公开(公告)号：US20240410986A1
公开(公告)日：2024-12-12
申请号：US18702037
申请日：2022-09-27
Applicant: ams-OSRAM International GmbH
Inventor： Reiner WINDISCH , Hubert HALBRITTER , Simon LANKES
IPC: G01S7/481 , G01S7/4912 , G01S17/34 , H01L31/0352 , H01L31/103
Abstract: The invention relates to a detector element which has the following features: an epitaxial semiconductor layer sequence including at least two active layers which are designed to absorb electromagnetic radiation with a wavelength L1, wherein the epitaxial semiconductor layer sequence has a first main surface and a second main surface lying opposite the first main surface, each surface being designed to couple in and couple out electromagnetic radiation, and at least three electric connection contacts which are designed to electrically contact the active layers, an electric connection contact being arranged between two active layers. The invention additionally relates to a lidar module and to a method for operating a lidar module.
-
公开(公告)号：US20250062594A1
公开(公告)日：2025-02-20
申请号：US18721349
申请日：2022-11-18
Applicant: ams-OSRAM International GmbH
Inventor： Hubert HALBRITTER
Abstract: Disclosed is a semiconductor laser with a vertical emission direction including a first active region and a first photonic crystal, wherein during operation of the semiconductor laser, first radiation emitted in the first active region is partially deflected into the vertical emission direction by means of the first photonic crystal, a second active region and a second photonic crystal, wherein during operation of the semiconductor laser, second radiation emitted in the second active region is partially deflected into the vertical emission direction by means of the second photonic crystal, and a connection region which is arranged in the vertical emission direction between the first active region and the second active region and connects the first active region and the second active region together in an electrically conductive manner. Also disclosed is a method for producing a semiconductor laser.
-
公开(公告)号：US20250047063A1
公开(公告)日：2025-02-06
申请号：US18836087
申请日：2023-01-18
Applicant: ams-OSRAM International GmbH
Inventor： Tansen VARGHESE , Hans-Jürgen LUGAUER , Hubert HALBRITTER
Abstract: A laser diode component is described including: a semiconductor layer stack having an active zone for emitting laser radiation, a photonic crystal structure having a plurality of structured portions, contacts for electrically contacting the laser diode component, one contact having a plurality of contact portions arranged in recesses of the semiconductor layer stack (2), wherein the contact portions penetrate the active zone.
-
公开(公告)号：US20240372319A1
公开(公告)日：2024-11-07
申请号：US18562624
申请日：2022-04-29
Applicant: ams-OSRAM International GmbH
Inventor： Laura KREINER , Hubert HALBRITTER , Tansen VARGHESE
Abstract: A method of manufacturing a semiconductor device includes epitaxially growing a sacrificial layer over a GaN substrate, epitaxially growing a first semiconductor layer over the sacrificial layer and forming a first layer over a first main surface of the first semiconductor layer, the first main surface being on a side of the first semiconductor layer remote from the GaN substrate. The method further includes forming a fluid channel or trench extending through the first layer and the first semiconductor layer to the sacrificial layer, etching the sacrificial layer, including introducing an etchant into the fluid channel or trench, to remove the GaN substrate and forming a second dielectric layer over a second main surface of the first semiconductor layer.
-
公开(公告)号：US20240162681A1
公开(公告)日：2024-05-16
申请号：US18552795
申请日：2022-03-02
Applicant: ams-OSRAM International GmbH
Inventor： Hubert HALBRITTER , Bruno JENTZSCH , Alvaro GOMEZ-IGLESIAS
CPC classification number: H01S5/04256 , H01S5/026 , H01S5/028 , H01S5/1085 , H01S5/187 , H01S5/34333
Abstract: In at least one embodiment, the optoelectronic semiconductor chip including a semiconductor layer sequence, in which there is at least one active zone for generating radiation; and a first electrode and a second electrode, with which the semiconductor layer sequence is in electrical contact; wherein the semiconductor layer sequence has, in the region of the active zone, at least one obliquely extending facet designed for a beam deflection of the radiation; wherein the first electrode and the second electrode are on the same mounting side of the semiconductor layer sequence as the at least one obliquely extending facet, and the mounting side is a main side of the semiconductor layer sequence; and wherein the radiation is coupled out on an emission side of the semiconductor layer sequence opposite from the mounting side.
-
Patent Agency Ranking
公开(公告)号：US20230333249A1
公开(公告)日：2023-10-19
申请号：US18044223
申请日：2021-08-23
Applicant: ams-OSRAM International GmbH
Inventor： Hubert HALBRITTER
IPC: G01S17/58 , G01S7/4911 , G01S7/481
CPC classification number: G01S17/58 , G01S7/4911 , G01S7/4811
Abstract: An optical measuring system includes a multiplicity of apparatuses for emitting electromagnetic radiation, said apparatuses being configured to emit a signal simultaneously. The optical measuring system further includes a modulation device for altering a frequency of the respectively emitted electromagnetic radiation and a multiplicity of detectors which are suitable for detecting a superposition signal, which comprises the emitted electromagnetic radiation and electromagnetic radiation reflected at an object, and a measuring device, wherein the measuring device is suitable for being successively connected to each individual detector of the multiplicity of detectors.
-
公开(公告)号：US20250149856A1
公开(公告)日：2025-05-08
申请号：US18836990
申请日：2022-12-13
Applicant: ams-OSRAM INTERNATIONAL GmbH
Inventor： Hubert HALBRITTER , Adrian Stefan AVRAMESCU , Christoph EICHLER
IPC: H01S5/11
Abstract: The invention relates to an optoelectronic semiconductor laser component. The optoelectronic semiconductor laser component includes an epitaxial semiconductor layer sequence having an active region which is designed to generate first electromagnetic radiation in a first wavelength range. The optoelectronic semiconductor laser component further includes a photonic semiconductor layer which forms a two-dimensional photonic crystal and is designed to form a resonator for the first electromagnetic radiation, and a conversion element which is designed to convert the first electromagnetic radiation into second electromagnetic radiation in a second wavelength range. The emission direction is oriented transversely to the main plane of extent of the epitaxial semiconductor layer sequence. The first electromagnetic radiation exits from the photonic semiconductor layer in the emission direction. The first wavelength range is in the blue or ultraviolet spectral range. The invention also relates to an optoelectronic arrangement.
-
公开(公告)号：US20250035755A1
公开(公告)日：2025-01-30
申请号：US18717010
申请日：2022-11-28
Applicant: ams-OSRAM International GmbH
Inventor： Hubert HALBRITTER , Simon LANKES , Reiner WINDISCH
Abstract: The present disclosure provides an optoelectronic component for a LiDAR system including a photonic integrated circuit. The photonic integrated circuit further includes a microresonator which is configured as an external resonator for an optical gain medium and to provide a frequency-modulated optical transmission field. A waveguide is optically coupled to an output side of the microresonator. A coherent in-line balanced detector comprises an electrical output, as well as a first optical connection side which is coupled to the waveguide to receive the transmission field, and a second optical connection side which is configured to receive a frequency-modulated optical reflection field. The coherent in-line balanced detector is further configured to superimpose the transmission field and the reflection field and to provide an electronic combination signal at the electrical output.
-
公开(公告)号：US20230327402A1
公开(公告)日：2023-10-12
申请号：US18044388
申请日：2021-08-30
Applicant: ams-Osram International GmbH
Inventor： Hubert HALBRITTER
CPC classification number: H01S5/0622 , G01J9/0246 , G01S17/08 , G01S7/4814 , H01S5/06808 , H01S5/0687 , H01S5/183
Abstract: A laser source may include a laser diode, a modulation device, and a feedback device. The modulation device may include an electric power source and may be suitable for modifying a current intensity applied to the laser diode, which may modify an emission frequency of the laser diode. The feedback device may be suitable for modifying a current intensity applied to the laser diode by the electric power source as a function of the electromagnetic radiation emitted by the laser diode.
-
10.发明公开公开(公告)号：US20230231362A1
公开(公告)日：2023-07-20
申请号：US17926876
申请日：2021-05-04
Applicant: ams-OSRAM International GmbH
Inventor： Bruno JENTZSCH , Hubert HALBRITTER
CPC classification number: H01S5/1021 , H01S5/423 , H01S5/34326 , H01S5/3432 , H01S5/18305 , H01S5/185 , H01S5/02255 , H01S5/026 , G01S7/4814
Abstract: A semiconductor laser includes a horizontal laser element including a first semiconductor layer arrangement having a first active zone for generating radiation. The horizontal laser element furthermore includes a first optical resonator extending in a direction parallel to a first main surface of the first semiconductor layer arrangement. Lateral boundaries of the first semiconductor layer arrangement run obliquely, such that electromagnetic radiation generated is reflectable in a direction of the first main surface of the first semiconductor layer arrangement. The semiconductor laser furthermore includes a vertical laser element having a second optical resonator extending in a direction perpendicular to the first main surface of the first semiconductor layer arrangement. The vertical laser element is arranged above the first semiconductor layer arrangement on the side of the first main surface in a beam path of electromagnetic radiation reflected at one of the lateral boundaries of the first semiconductor layer arrangement (112).
-
-
-
-
-
-
-
-
-
Search Results
29
records
(took 0.015 seconds)
