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公开(公告)号：US12055569B2
公开(公告)日：2024-08-06
申请号：US18317806
申请日：2023-05-15
发明人： David J. Clarke , Stephen Denis Heffernan , Nijun Wei , Alan J. O'Donnell , Patrick Martin McGuinness , Shaun Bradley , Edward John Coyne , David Aherne , David M. Boland
IPC分类号： G01R19/165 , G01R31/00 , G01R31/28 , H01L23/525 , H01L23/60 , H01L23/62 , H01L27/02 , H02H9/00 , H02H9/04
CPC分类号： G01R19/16504 , G01R31/002 , G01R31/2832 , G01R31/2856 , H01L23/5256 , H01L23/60 , H01L23/62 , H01L27/0288 , H02H9/00 , H02H9/042
摘要： The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes.
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公开(公告)号：US20240159804A1
公开(公告)日：2024-05-16
申请号：US18419415
申请日：2024-01-22
发明人： David J. Clarke , Stephen Denis Heffernan , Nijun Wei , Alan J. O'Donnell , Patrick Martin McGuinness , Shaun Bradley , Edward John Coyne , David Aherne , David M. Boland
IPC分类号： G01R19/165 , G01R31/00 , G01R31/28 , H01L23/525 , H01L23/60 , H01L23/62 , H01L27/02 , H02H9/00 , H02H9/04
CPC分类号： G01R19/16504 , G01R31/002 , G01R31/2832 , G01R31/2856 , H01L23/5256 , H01L23/60 , H01L23/62 , H01L27/0288 , H02H9/00 , H02H9/042
摘要： The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically are in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes;
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3.发明公开公开(公告)号：US20230375600A1
公开(公告)日：2023-11-23
申请号：US18317806
申请日：2023-05-15
发明人： David J. Clarke , Stephen Denis Heffernan , Nijun Wei , Alan J. O'Donnell , Patrick Martin McGuinness , Shaun Bradley , Edward John Coyne , David Aherne , David M. Boland
IPC分类号： G01R19/165 , G01R31/00 , G01R31/28 , H02H9/04 , H01L27/02 , H01L23/60 , H01L23/62 , H01L23/525 , H02H9/00
CPC分类号： G01R19/16504 , G01R31/002 , G01R31/2832 , G01R31/2856 , H02H9/042 , H01L27/0288 , H01L23/60 , H01L23/62 , H01L23/5256 , H02H9/00
摘要： The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes;
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公开(公告)号：US11372030B2
公开(公告)日：2022-06-28
申请号：US16893874
申请日：2020-06-05
IPC分类号： G01R19/165 , H01L23/60 , G01R31/00 , H01L27/02 , G01R31/28 , G01N25/04 , H01L23/525 , H01L23/62 , H01L25/065
摘要： The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, a device configured to monitor electrical overstress (EOS) events includes a pair of spaced conductive structures configured to electrically arc in response to an EOS event, wherein the spaced conductive structures are formed of a material and have a shape such that arcing causes a detectable change in shape of the spaced conductive structures, and wherein the device is configured such that the change in shape of the spaced conductive structures is detectable to serve as an EOS monitor.
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公开(公告)号：US11668734B2
公开(公告)日：2023-06-06
申请号：US17446945
申请日：2021-09-03
发明人： David J. Clarke , Stephen Denis Heffernan , Nijun Wei , Alan J. O'Donnell , Patrick Martin McGuinness , Shaun Bradley , Edward John Coyne , David Aherne , David M. Boland
IPC分类号： G01R19/165 , G01R31/00 , G01R31/28 , H02H9/04 , H01L27/02 , H01L23/60 , H01L23/62 , H01L23/525 , H02H9/00
CPC分类号： G01R19/16504 , G01R31/002 , G01R31/2832 , G01R31/2856 , H01L23/5256 , H01L23/60 , H01L23/62 , H01L27/0288 , H02H9/00 , H02H9/042
摘要： The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes.
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公开(公告)号：US11112436B2
公开(公告)日：2021-09-07
申请号：US16360356
申请日：2019-03-21
发明人： David J. Clarke , Stephen Denis Heffernan , Nijun Wei , Alan J. O'Donnell , Patrick Martin McGuinness , Shaun Bradley , Edward John Coyne , David Aherne , David M. Boland
IPC分类号： G01R19/165 , G01R31/00 , G01R31/28 , H02H9/04 , H01L27/02 , H01L23/60 , H01L23/62 , H01L23/525 , H02H9/00
摘要： The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes.
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公开(公告)号：US20210396788A1
公开(公告)日：2021-12-23
申请号：US17446945
申请日：2021-09-03
发明人： David J. Clarke , Stephen Denis Heffernan , Nijun Wei , Alan J. O'Donnell , Patrick Martin McGuinness , Shaun Bradley , Edward John Coyne , David Aherne , David M. Boland
IPC分类号： G01R19/165 , G01R31/00 , G01R31/28 , H02H9/04 , H01L27/02 , H01L23/60 , H01L23/62 , H01L23/525 , H02H9/00
摘要： The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes;
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