公开(公告)号：US11973315B2

公开(公告)日：2024-04-30

申请号：US17706651

申请日：2022-03-29

Applicant: APPLE INC.

Inventor： Jae Y. Park ,  Arnaud Laflaquière ,  Christophe Vérove ,  Fei Tan

IPC: H01S5/183 ,  H01S5/30 ,  H01S5/343 ,  H01S5/42

CPC classification number: H01S5/18308 ,  H01S5/18358 ,  H01S5/18366 ,  H01S5/18369 ,  H01S5/3095 ,  H01S5/34313 ,  H01S5/426

Abstract: An optoelectronic device includes a carrier substrate and a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first layers. A set of epitaxial layers disposed over the lower DBR includes a quantum well structure. An upper DBR stack disposed over the set of epitaxial layers includes alternating second layers. Electrodes apply an excitation current to the quantum well structure. At least one of the electrodes includes a metal ring disposed at an inner side of at least one of the DBR stacks in proximity to the quantum well structure. One or more metal vias pass through the at least one of the DBR stacks so as to connect the metal ring at the inner side of the at least one of the DBR stacks to an electrical contact on an outer side of the at least one of the DBR stacks.

公开(公告)号：US20240079440A1

公开(公告)日：2024-03-07

申请号：US17903067

申请日：2022-09-06

Applicant: Apple Inc.

Inventor： Oray O. Cellek ,  Fei Tan ,  Gershon Rosenblum ,  Hong Wei Lee ,  Cheng-Ying Tsai ,  Jae Y. Park ,  Christophe Verove ,  John L Orlowski ,  Siddharth Joshi ,  Xiangli Li ,  David Coulon ,  Xiaofeng Fan ,  Keith Lyon ,  Nicolas Hotellier ,  Arnaud Laflaquière

IPC: H01L27/146 ,  H04N5/378

CPC classification number: H01L27/14652 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/1465 ,  H04N5/378

Abstract: A multispectral sensing device includes a first die, including silicon, which is patterned to define a first array of sensor elements, which output first electrical signals in response to optical radiation that is incident on the device in a band of wavelengths less than 1000 nm that is incident on the front side of the first die. A second die has its first side bonded to the back side of the first die and includes a photosensitive material and is patterned to define a second array of sensor elements, which output second electrical signals in response to the optical radiation that is incident on the device in a second band of wavelengths greater than 1000 nm that passes through the first die and is incident on the first side of the second die. Readout circuitry reads the first electrical signals and the second electrical signals serially out of the device.

公开(公告)号：US20220224078A1

公开(公告)日：2022-07-14

申请号：US17706651

申请日：2022-03-29

Applicant: APPLE INC.

Inventor： Jae Y. Park ,  Arnaud Laflaquière ,  Christophe Vérove ,  Fei Tan

IPC: H01S5/183 ,  H01S5/30 ,  H01S5/343 ,  H01S5/42

Abstract: An optoelectronic device includes a carrier substrate and a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first layers. A set of epitaxial layers disposed over the lower DBR includes a quantum well structure. An upper DBR stack disposed over the set of epitaxial layers includes alternating second layers. Electrodes apply an excitation current to the quantum well structure. At least one of the electrodes includes a metal ring disposed at an inner side of at least one of the DBR stacks in proximity to the quantum well structure. One or more metal vias pass through the at least one of the DBR stacks so as to connect the metal ring at the inner side of the at least one of the DBR stacks to an electrical contact on an outer side of the at least one of the DBR stacks.

公开(公告)号：US11322910B2

公开(公告)日：2022-05-03

申请号：US16792317

申请日：2020-02-17

Applicant: APPLE INC.

Inventor： Jae Y. Park ,  Arnaud Laflaquière ,  Christophe Vérove ,  Fei Tan

IPC: H01S5/183 ,  H01S5/30 ,  H01S5/343 ,  H01S5/42

Abstract: An optoelectronic device includes a carrier substrate, with a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first dielectric and semiconductor layers. A set of epitaxial layers is disposed over the lower DBR, wherein the set of epitaxial layers includes one or more III-V semiconductor materials and defines a quantum well structure and a confinement layer. An upper DBR stack is disposed over the set of epitaxial layers and includes alternating second dielectric and semiconductor layers. Electrodes are coupled to apply an excitation current to the quantum well structure.

公开(公告)号：US20200274328A1

公开(公告)日：2020-08-27

申请号：US16792317

申请日：2020-02-17

Applicant: APPLE INC.

Inventor： Jae Y. Park ,  Arnaud Laflaquière ,  Christophe Vérove ,  Fei Tan

IPC: H01S5/183 ,  H01S5/42 ,  H01S5/343 ,  H01S5/30

Abstract: An optoelectronic device includes a carrier substrate, with a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first dielectric and semiconductor layers. A set of epitaxial layers is disposed over the lower DBR, wherein the set of epitaxial layers includes one or more III-V semiconductor materials and defines a quantum well structure and a confinement layer. An upper DBR stack is disposed over the set of epitaxial layers and includes alternating second dielectric and semiconductor layers. Electrodes are coupled to apply an excitation current to the quantum well structure.