公开(公告)号：US20190080951A1

公开(公告)日：2019-03-14

申请号：US15703961

申请日：2017-09-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Joel M. HUSTON ,  Cheng-Hsiung TSAI ,  Gwo-Chuan TZU

IPC: H01L21/683 ,  H01L21/78 ,  H01L21/67 ,  H01L21/677

Abstract: Embodiments of substrate supports and process chambers equipped with the same are provided. In some embodiments, a substrate support includes: a support body having a first surface; one or more receptacles extending through the first surface and into the support body; and one or more protrusions respectively disposed within corresponding ones of the one or more receptacles and projecting from the first surface, wherein the one or more protrusions at least partially define a substantially planar support surface above the first surface. Methods of eliminating backside wafer damage are also disclosed.

公开(公告)号：US20170241020A1

公开(公告)日：2017-08-24

申请号：US15452293

申请日：2017-03-07

Applicant: Applied Materials, Inc.

Inventor： Gwo-Chuan TZU ,  Salvador P. UMOTOY

IPC: C23C16/455 ,  C23C16/50

CPC classification number: C23C16/45544 ,  C23C16/455 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45538 ,  C23C16/45561 ,  C23C16/50 ,  H01L21/67017

Abstract: Embodiments of the disclosure generally relate to apparatuses for processing substrates. In one embodiment, a substrate processing system is provided and includes a lid having an upper lid surface opposed to a lower lid surface, a plurality of gas inlet passages extending from the upper lid surface to the lower lid surface, a gas manifold disposed on the lid, at least one valve coupled with the gas manifold and configured to control a gas flow through one of the gas inlet passages, wherein the at least one valve is configured to provide an open and close cycle having a time period of less than about 1 second during a gas delivery cycle for enabling an atomic layer deposition process. The substrate processing system further contains a gas reservoir fluidly connected between the gas manifold and at least one precursor source.