公开(公告)号：US20150099345A1

公开(公告)日：2015-04-09

申请号：US14506208

申请日：2014-10-03

Applicant: APPLIED MATERIALS, INC.

Inventor： BYUNGKOOK KONG ,  HOON SANG LEE ,  JINSU KIM ,  HO JEONG KIM ,  XIAOSONG JI ,  HUN SANG KIM ,  JINHAN CHOI

IPC: H01L21/3065 ,  H01L21/762

CPC classification number: H01L21/3065 ,  H01L21/30655 ,  H01L21/67253 ,  H01L21/76224

Abstract: Embodiments of methods for forming features in a silicon containing layer of a substrate disposed on a substrate support are provided herein. In some embodiments, a method for forming features in a silicon containing layer of a substrate disposed on a substrate support in a processing volume of a process chamber includes: exposing the substrate to a first plasma formed from a first process gas while providing a bias power to the substrate support, wherein the first process gas comprises one or more of a chlorine-containing gas or a bromine containing gas; and exposing the substrate to a second plasma formed from a second process gas while no bias power is provided to the substrate support, wherein the second process gas comprises one or more of an oxygen-containing gas or nitrogen gas, and wherein a source power provided to form the first plasma and the second plasma is continuously provided.

Abstract translation: 本文提供了在设置在基板支撑件上的基板的含硅层中形成特征的方法的实施例。 在一些实施例中，用于在处理室的处理体积中设置在衬底支撑件上的衬底的含硅层中形成特征的方法包括：将衬底暴露于由第一工艺气体形成的第一等离子体，同时提供偏置功率 其中所述第一工艺气体包括含氯气体或含溴气体中的一种或多种; 以及将所述衬底暴露于由第二工艺气体形成的第二等离子体，同时不向所述衬底支撑体提供偏置功率，其中所述第二工艺气体包含一种或多种含氧气体或氮气，并且其中提供源极功率 以形成第一等离子体并连续提供第二等离子体。

公开(公告)号：US20150371889A1

公开(公告)日：2015-12-24

申请号：US14310607

申请日：2014-06-20

Applicant: APPLIED MATERIALS, INC.

Inventor： HUN SANG KIM ,  WONMO AHN ,  SHINICHI KOSEKI ,  JINHAN CHOI ,  SEAN KANG

IPC: H01L21/76 ,  H01L21/308 ,  H01L21/3065

CPC classification number: H01L21/30655 ,  C23C16/30 ,  H01J37/32449 ,  H01J37/32458 ,  H01J37/32541 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32899 ,  H01L21/02381 ,  H01L21/02387 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/6719 ,  H01L21/68785 ,  H01L21/76224

Abstract: Methods for processing a substrate include (a) providing a substrate comprising a silicon germanium layer and a patterned mask layer atop the silicon germanium layer to define a feature in the silicon germanium layer; (b) exposing the substrate to a first plasma formed from a first process gas to etch a feature into the silicon germanium layer; (c) subsequently exposing the substrate to a second plasma formed from a second process gas to form an oxide layer on a sidewall and a bottom of the feature; (d) exposing the substrate to a third plasma formed from a third process gas to etch the oxide layer from the bottom of the feature; and (e) repeating (b)-(d) to form the feature in the first layer to a desired depth, wherein the first process gas, the second process gas and the third process gas are not the same.

Abstract translation: 用于处理衬底的方法包括（a）提供包括硅锗层的衬底和在硅锗层顶上的图案化掩模层以限定硅锗层中的特征; （b）将衬底暴露于由第一工艺气体形成的第一等离子体，以将特征蚀刻到硅锗层中; （c）随后将所述衬底暴露于由第二工艺气体形成的第二等离子体，以在所述特征的侧壁和底部上形成氧化物层; （d）将所述衬底暴露于由第三工艺气体形成的第三等离子体以从所述特征的底部蚀刻所述氧化物层; 和（e）重复（b） - （d）以将第一层中的特征形成期望的深度，其中第一处理气体，第二处理气体和第三处理气体不相同。