Abstract:
Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a substrate processing chamber includes a body having a first side and an opposing second side; a gas distribution plate disposed proximate the second side of the body; and a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body, wherein the body is electrically coupled to the gas distribution plate through the clamp.
Abstract:
Methods and apparatus for bonding an electrostatic chuck to a component of a substrate support are provided herein. In some embodiments, an adhesive for bonding components of a substrate support may include a matrix of silicon-based polymeric material having a filler dispersed therein. The silicon based polymeric material may be a polydimethylsiloxane (PDMS) structure having a molecular weight with a low molecular weight (LMW) content Σ D3-D10 of less than about 500 ppm. In some embodiments, the filler may comprise between about 50 to about 70 percent by volume of the adhesive layer. In some embodiments, the filler may comprise particles of aluminum oxide (Al2O3), aluminum nitride (AlN), yttrium oxide (Y2O3), or combinations thereof. In some embodiments, the filler may comprise particles having a diameter of about 10 nanometers to about 10 microns.
Abstract:
Substrate processing chamber components for use in substrate processing chambers are provided herein. In some embodiments, a substrate processing chamber component may include a body having a first surface, one or more heat exchangers disposed within the body below the first surface, and one or more anisotropic layers, wherein a separate anisotropic layer is disposed between each of the one or more heat exchangers and the first surface.
Abstract:
Slit valve gates and methods for cleaning are provided. Slit valves include: a slit valve gate configured to seal an opening of a process chamber, the slit valve gate comprising a surface that faces an processing volume of the process chamber; and a non-porous anodized coating on the surface of the slit valve gate. Methods of cleaning include: immersing the slit valve gate in a tank comprising deionized water; sonicating the slit valve gate at a first power density of about 6 W/cm2 to about 15 W/cm2 and a frequency of about 25 kHz to about 40 kHz for a first period of time; sonicating the slit valve gate at a second power density of about 30 W/cm2 to about 45 W/cm2 and a frequency of about 25 kHz to about 40 kHz for a second period of time; and removing the slit valve gate from the tank.
Abstract:
Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a base having a first side and a second side; a gas distribution plate disposed proximate the second side of the base; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the base; and a thermal gasket disposed between the base and gas distribution plate.