Creating ion energy distribution functions (IEDF)

    公开(公告)号:US10312048B2

    公开(公告)日:2019-06-04

    申请号:US15834939

    申请日:2017-12-07

    Abstract: Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.

    Lift pin mechanism
    2.
    发明授权

    公开(公告)号:US12211734B2

    公开(公告)日:2025-01-28

    申请号:US17688712

    申请日:2022-03-07

    Abstract: Methods and apparatus for a lift pin mechanism for substrate processing chambers are provided herein. In some embodiments, the lift pin mechanism includes a lift pin comprising a shaft with a top end, a bottom end, and a coupling end at the bottom end; a bellows assembly disposed about the shaft. The bellows assembly includes an upper bellows flange having an opening for axial movement of the shaft; a bellows having a first end coupled to a lower surface of the upper bellows flange such that the shaft extends into a central volume surrounded by the bellows; and a bellows guide assembly coupled to a second end of the bellows to seal the central volume. The shaft is coupled to the bellows guide assembly at the coupling end. The bellows guide assembly is axially movable to move the lift pin with respect to the upper bellows flange.

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