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公开(公告)号:US11551942B2
公开(公告)日:2023-01-10
申请号:US17022072
申请日:2020-09-15
Applicant: APPLIED MATERIALS, INC.
Inventor: Manoj A. Gajendra , Kyle Moran Hanson , Mahadev Joshi , Arvind Thiyagarajan , Jon Christian Farr
IPC: H01L21/67 , H01L21/02 , H01L21/3065 , B08B3/08 , H01L21/677 , H01L21/687
Abstract: Methods and apparatus for removing substrate contamination are provided herein. In some embodiments, a multi-chamber processing apparatus includes: a processing chamber for processing a substrate; a factory interface (FI) coupled to the processing chamber via a load lock chamber disposed therebetween; and a cleaning chamber coupled to the FI and configured to rinse and to dry the substrate, wherein the cleaning chamber includes a chamber body defining an interior volume and having a first opening at an interface with the FI for transferring the substrate into and out of the interior volume.
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公开(公告)号:US09799548B2
公开(公告)日:2017-10-24
申请号:US14197699
申请日:2014-03-05
Applicant: APPLIED MATERIALS, INC.
Inventor: Gangadhar Sheelavant , Mahadev Joshi , Yuji Aoki
IPC: H01L21/687 , C30B25/12 , H01L21/67 , C23C16/458
CPC classification number: H01L21/68735 , C23C16/4585 , C30B25/12 , H01L21/67115 , H01L21/68742
Abstract: Apparatus for supporting a substrate are provided herein. In some embodiments, a substrate support includes a susceptor plate having a top surface; a recess formed within the top surface, wherein the recess is defined by an edge; and a plurality of angled support elements disposed within the recess and along the edge of the recess, wherein each angled support element comprises a first surface downwardly sloped toward a center of the recess.
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公开(公告)号:US12094740B2
公开(公告)日:2024-09-17
申请号:US17212862
申请日:2021-03-25
Applicant: Applied Materials, Inc.
Inventor: Manoj A. Gajendra , Mahadev Joshi , Joseph Antony Jonathan , Jamie S. Leighton
IPC: H01L21/67 , B08B3/02 , B08B5/02 , B08B13/00 , B24B37/013 , B24B37/34 , H01L21/02 , H01L21/306 , H01L21/66 , H01L21/687
CPC classification number: H01L21/67253 , B08B3/022 , B08B5/02 , B08B13/00 , B24B37/013 , B24B37/345 , H01L21/02057 , H01L21/30625 , H01L21/68707 , H01L22/12
Abstract: A method and apparatus for polishing a substrate is disclosed herein. More specifically, the apparatus relates to an integrated CMP system for polishing substrates. The CMP system has a polishing station configured to polish substrates. A spin rinse dry (SRD) station configured to clean and dry the substrates. A metrology station configured to measure parameters of the substrates. A robot configured to move the substrate in to and out of the SRD station. And an effector rinse and dry (EERD) station configured to clean and dry an end effector of the robot.
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