APPARATUS AND METHODS FOR PHOTOMASK BACKSIDE CLEANING

    公开(公告)号:US20170139334A1

    公开(公告)日:2017-05-18

    申请号:US14945319

    申请日:2015-11-18

    Abstract: Apparatus for cleaning a photo mask includes a rotor in a head, with the rotor having a seal plate having a central opening, a resilient mask seal in the central opening, and retractors attached to the resilient mask seal and adapted to move the resilient mask seal into open and closed positions. A motor in the head rotates the rotor. A push plate in the head moves to operate the retractors. In the closed position the resilient mask seal seals against the sides of the photo mask. The back side of the photo mask can then be cleaned without affecting the patterned front side of the photo mask.

    Apparatus and methods for photomask backside cleaning

    公开(公告)号:US09864283B2

    公开(公告)日:2018-01-09

    申请号:US14945319

    申请日:2015-11-18

    Abstract: Apparatus for cleaning a photo mask includes a rotor in a head, with the rotor having a seal plate having a central opening, a resilient mask seal in the central opening, and retractors attached to the resilient mask seal and adapted to move the resilient mask seal into open and closed positions. A motor in the head rotates the rotor. A push plate in the head moves to operate the retractors. In the closed position the resilient mask seal seals against the sides of the photo mask. The back side of the photo mask can then be cleaned without affecting the patterned front side of the photo mask.

    CONTROLLED ETCH OF NITRIDE FEATURES
    8.
    发明申请

    公开(公告)号:US20190019688A1

    公开(公告)日:2019-01-17

    申请号:US16036617

    申请日:2018-07-16

    Abstract: Methods of etching a semiconductor substrate may include applying an etchant to the semiconductor substrate. The semiconductor substrate may include an exposed region of an oxygen-containing material and an exposed region of a nitrogen-containing material. The methods may include heating the semiconductor substrate from a first temperature to a second temperature. The methods may include maintaining the semiconductor substrate at the second temperature for a period of time sufficient to perform an etch of the nitrogen-containing material relative to the oxygen-containing material. The methods may also include quenching the etch subsequent the period of time.

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