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    Substrate position aligner
    1.
    发明授权
    Substrate position aligner 有权
    基板位置对准器

    公开(公告)号：US09218996B2

    公开(公告)日：2015-12-22

    申请号：US14195343

    申请日：2014-03-03

    Applicant: Applied Materials, Inc.

    Inventor： Manoj A. Gajendra

    IPC: H01L21/68 ,  H01L21/67

    CPC classification number: H01L21/681 ,  H01L21/67242 ,  H01L21/68 ,  Y10S414/136

    Abstract: A substrate position aligner includes a substrate holding assembly, a plurality of rollers, a rotation mechanism, and a sensor. The substrate holding assembly is configured to hold a substrate in a vertical orientation. The plurality of rollers include at least two idler rollers and a drive roller. Each roller has a point on its perimeter spaced on a common radius from a center of substrate rotation defined within the substrate holding assembly. The sensor is positioned approximately on the common radius and configured to detect the presence of an orientation cut in the substrate when the orientation cut is not orientated within a range between about −44 degrees and about +44 degrees from horizontal. A method of aligning a substrate having an orientation cut includes sensing a presence of the orientation cut when the orientation cut is not orientated within the above recited range.

    Abstract translation: 基板位置对准器包括基板保持组件，多个滚子，旋转机构和传感器。 衬底保持组件被配置为将衬底保持在垂直取向。 多个辊包括至少两个惰辊和驱动辊。 每个辊子在其周边上具有一个点，该点与衬底保持组件中限定的衬底旋转中心的公共半径隔开。 传感器大致位于公共半径上并被配置为当定向切割不定向在与水平面约-44度和约+ 44度之间的范围内时，检测衬底中存在取向切割。 对准具有取向切割的基板的方法包括：当取向切口不在上述范围内时定向切割的存在。

    Apparatus for treating a gas in a conduit
    3.
    发明授权
    Apparatus for treating a gas in a conduit 有权
    用于处理管道中的气体的装置

    公开(公告)号：US09378928B2

    公开(公告)日：2016-06-28

    申请号：US14445965

    申请日：2014-07-29

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Jibing Zeng ,  Brian T. West ,  Rongping Wang ,  Manoj A. Gajendra

    IPC: H01J37/02 ,  H01J37/32 ,  H05H1/30 ,  H05H1/24

    CPC classification number: H01J37/3211 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32568 ,  H01J37/32807 ,  H01J37/32834 ,  H01J37/32844 ,  H05H1/2406 ,  H05H1/30 ,  H05H2001/2468 ,  Y02C20/30

    Abstract: Apparatus for treating a gas in a conduit of a substrate processing system are provided. In some embodiments, an apparatus for treating a gas in a conduit of a substrate processing system includes: a dielectric tube to be coupled to a conduit of a substrate processing system to allow a flow of gases through the dielectric tube, wherein the dielectric tube has a conical sidewall; and an RF coil wound about an outer surface of the conical sidewall of the dielectric tube, the RF coil having a first end to provide an RF input to the RF coil, the first end of the RF coil disposed proximate a first end of the dielectric tube and a second end disposed proximate a second end of the dielectric tube. In some embodiments, the RF coil is hollow and includes coolant fittings to couple the hollow RF coil to a coolant supply.

    Abstract translation: 提供了用于处理基板处理系统的管道中的气体的装置。 在一些实施例中，用于处理衬底处理系统的导管中的气体的装置包括：电介质管，其被耦合到衬底处理系统的导管，以允许气体流过电介质管，其中介电管具有 锥形侧壁; 以及围绕所述电介质管的所述锥形侧壁的外表面缠绕的RF线圈，所述RF线圈具有第一端以向所述RF线圈提供RF输入，所述RF线圈的所述第一端靠近所述电介质的第一端设置 管和设置在电介质管的第二端附近的第二端。 在一些实施例中，RF线圈是中空的并且包括将中空RF线圈耦合到冷却剂供应的冷却剂配件。

    Heat exchanger with multistaged cooling
    5.
    发明授权
    Heat exchanger with multistaged cooling 有权

    公开(公告)号：US11306971B2

    公开(公告)日：2022-04-19

    申请号：US16668447

    申请日：2019-10-30

    Applicant: Applied Materials, Inc.

    Inventor： Manoj A. Gajendra

    IPC: F28D1/02 ,  F28F9/00

    Abstract: A heat exchanger for abating compounds produced in semiconductor processes. When hot effluent flows into the heat exchanger, a coolant can be flowed to walls of a fluid heat exchanging surface within the heat exchanger. The heat exchanging surface can include a plurality of channel regions which creates a multi stage cross flow path for the hot effluent to flow down the heat exchanger. This flow path forces the hot effluent to hit the cold walls of the fluid heat exchanging surface, significantly cooling the effluent and preventing it from flowing directly into the vacuum pumps and causing heat damage. Embodiments described herein also relate to methods of forming a heat exchanger. The heat exchanger can be created by sequentially depositing layers of thermally conductive material on surfaces using 3-D printing, creating a much smaller footprint and reducing costs.

    Apparatus with multistaged cooling
    6.
    发明授权
    Apparatus with multistaged cooling 有权

    公开(公告)号：US11221182B2

    公开(公告)日：2022-01-11

    申请号：US16508598

    申请日：2019-07-11

    Applicant: Applied Materials, Inc.

    Inventor： Manoj A. Gajendra ,  Arul Vasanth Subramanian

    IPC: F28D1/053 ,  H01L21/67 ,  H01J37/32

    Abstract: Embodiments described herein relate to a heat exchanger for abating compounds produced in semiconductor processes. When hot effluent flows into the heat exchanger, a coolant can be flowed to walls of a heat exchanging surface within the heat exchanger. The heat exchanging surface can be a curved shaped which creates a multi stage cross flow path for the hot effluent to flow down the heat exchanger. This flow path forces the hot effluent to hit the cold walls of the heat exchanging surface, significantly cooling the effluent and preventing it from flowing directly into the vacuum pumps and causing heat damage. Embodiments described herein also relate to methods of forming a heat exchanger. The heat exchanger can be created by sequentially depositing layers of thermally conductive material on surfaces using 3-D printing, creating a much smaller foot print and reducing costs.

    Heat exchanger with multistaged cooling
    8.
    发明授权
    Heat exchanger with multistaged cooling 有权

    公开(公告)号：US12111110B2

    公开(公告)日：2024-10-08

    申请号：US17679824

    申请日：2022-02-24

    Applicant: Applied Materials, Inc.

    Inventor： Manoj A. Gajendra

    IPC: F28D1/02 ,  F28F9/00 ,  B01D5/00 ,  H01J37/32 ,  H01L21/67

    CPC classification number: F28D1/0246 ,  F28F9/002 ,  B01D5/0003 ,  B01D5/0045 ,  F28D2001/0266 ,  F28D2001/0273 ,  H01J37/32844 ,  H01L21/67017

    Abstract: A heat exchanger for abating compounds produced in semiconductor processes is presented. When hot effluent flows into the heat exchanger, a coolant can be flowed to walls of a fluid heat exchanging surface within the heat exchanger. The heat exchanging surface can include a plurality of channel regions which creates a multi stage cross flow path for the hot effluent to flow down the heat exchanger. This flow path forces the hot effluent to hit the cold walls of the fluid heat exchanging surface, significantly cooling the effluent and preventing it from flowing directly into the vacuum pumps and causing heat damage. The heat exchanger can be created by sequentially depositing layers of thermally conductive material on surfaces using 3-D printing, creating a much smaller footprint and reducing costs.

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