公开(公告)号：US20180047980A1

公开(公告)日：2018-02-15

申请号：US15789733

申请日：2017-10-20

Applicant: APPLIED MATERIALS, INC. ,  INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY (IUCF-HYU)

Inventor： BYUNG-SUNG LEO KWAK ,  JOSEPH G. GORDON, II ,  OMKARAM NALAMASU ,  YANGKOOK SUN ,  WONGI KIM ,  SEUNGMIN OH

IPC: H01M4/36 ,  C01B25/455 ,  H01M10/0525 ,  C01B25/45 ,  H01M4/136 ,  H01M4/04 ,  H01M4/58 ,  H01M4/587 ,  H01M4/02 ,  H01M10/052

CPC classification number: H01M4/366 ,  C01B25/45 ,  C01B25/455 ,  H01M4/0471 ,  H01M4/136 ,  H01M4/5815 ,  H01M4/582 ,  H01M4/5825 ,  H01M4/587 ,  H01M10/052 ,  H01M10/0525 ,  H01M2004/028

Abstract: Disclosed are a cathode active material for a lithium secondary battery, and a lithium secondary battery including the same. The disclosed cathode active material includes a core including a compound represented by Formula 1; and a shell including a compound represented by Formula 2, in which the core and the shell have different material compositions.

公开(公告)号：US20140370709A1

公开(公告)日：2014-12-18

申请号：US14301835

申请日：2014-06-11

Applicant: APPLIED MATERIALS, INC.

Inventor： BANQIU WU ,  AJAY KUMAR ,  RAO YALAMANCHILI ,  OMKARAM NALAMASU

IPC: H01L21/033 ,  G03F7/26

CPC classification number: G03F7/26 ,  H01L21/0273 ,  H01L21/3086

Abstract: Methods for reducing line width roughness and/or critical dimension nonuniformity in a photoresist pattern are provided herein. In some embodiments, a method of reducing line width roughness along a sidewall of a patterned photoresist layer disposed atop a substrate includes: (a) depositing a first layer atop the sidewall of the patterned photoresist layer; (b) etching the first layer and the sidewall after depositing the first layer to reduce the line width roughness of the patterned photoresist layer. In some embodiments, (a)-(b) may be repeated until the line width roughness is substantially smooth.

Abstract translation: 本文提供了减少光致抗蚀剂图案中的线宽粗糙度和/或临界尺寸不均匀性的方法。 在一些实施例中，沿着设置在衬底顶部的图案化光致抗蚀剂层的侧壁减小线宽度粗糙度的方法包括：（a）在图案化光致抗蚀剂层的侧壁顶部沉积第一层; （b）在沉积第一层之后蚀刻第一层和侧壁以减小图案化光致抗蚀剂层的线宽粗糙度。 在一些实施例中，（a） - （b）可以重复，直到线宽粗糙度基本上平滑。

公开(公告)号：US20140370708A1

公开(公告)日：2014-12-18

申请号：US14301847

申请日：2014-06-11

Applicant: APPLIED MATERIALS, INC.

Inventor： BANQIU WU ,  AJAY KUMAR ,  LEONID DORF ,  SHAHID RAUF ,  KARTIK RAMASWAMY ,  OMKARAM NALAMASU

IPC: H01L21/308 ,  H01L21/3065

CPC classification number: H01L21/31138 ,  G03F7/00 ,  G03F7/0035 ,  G03F7/004 ,  H01J37/32091 ,  H01J37/3233 ,  H01J37/3266 ,  H01L21/0273

Abstract: Methods for reducing the line width roughness on a photoresist pattern are provided herein. In some embodiments, a method of processing a patterned photoresist layer disposed atop a substrate includes flowing a process gas into a processing volume of a process chamber having the substrate disposed therein; forming a plasma within the process chamber from the process gas, wherein the plasma has a ion energy of about 1 eV to about 10 eV; and etching the patterned photoresist layer with species from the plasma to at least one of smooth a line width roughness of a sidewall of the patterned photoresist layer or remove debris.

Abstract translation: 本文提供了减少光致抗蚀剂图案上的线宽粗糙度的方法。 在一些实施例中，处理设置在基板顶上的图案化光致抗蚀剂层的方法包括将工艺气体流入其中布置有衬底的处理室的处理容积; 在所述处理室内从所述处理气体形成等离子体，其中所述等离子体具有约1eV至约10eV的离子能; 以及将来自等离子体的物质的图案化光致抗蚀剂层蚀刻成图案化光致抗蚀剂层的侧壁的线宽粗糙度的至少一个或去除碎屑。