公开(公告)号：US20140335679A1

公开(公告)日：2014-11-13

申请号：US13938186

申请日：2013-07-09

Applicant: Applied Materials, Inc.

Inventor： TONG LIU ,  DAVID REYLAND ,  ROHIT MISHRA ,  KHALID MOHIUDDIN SIRAJUDDIN ,  MADHAVA RAO YALAMANCHILI ,  AJAY KUMAR

IPC: H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/3065 ,  H01J37/3244 ,  H01J37/32706 ,  H01J2237/334 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/30655 ,  H01L21/3086 ,  H01L21/76898

Abstract: In some embodiments, a method for etching features into a substrate may include exposing a substrate having a photoresist layer disposed atop the substrate to a first process gas to form a polymer containing layer atop sidewalls and a bottom of a feature formed in the photoresist layer, wherein the first process gas is selectively provided to a first area of the substrate via a first set of gas nozzles disposed within a process chamber and; exposing the substrate to a second process gas having substantially no oxygen to etch the feature into the substrate, wherein the second process gas is selectively provided to a second area of the substrate via a second set of gas nozzles disposed in the process chamber.

Abstract translation: 在一些实施例中，用于将特征蚀刻到衬底中的方法可以包括将具有设置在衬底上的光致抗蚀剂层的衬底暴露于第一工艺气体，以在光致抗蚀剂层中形成的特征的侧壁和底部的顶部上形成聚合物含有层， 其中所述第一处理气体经由设置在处理室内的第一组气体喷嘴选择性地提供到所述衬底的第一区域; 将基底暴露于基本上没有氧的第二工艺气体，以将特征蚀刻到衬底中，其中通过设置在处理室中的第二组气体喷嘴将第二工艺气体选择性地提供到衬底的第二区域。

公开(公告)号：US20140370709A1

公开(公告)日：2014-12-18

申请号：US14301835

申请日：2014-06-11

Applicant: APPLIED MATERIALS, INC.

Inventor： BANQIU WU ,  AJAY KUMAR ,  RAO YALAMANCHILI ,  OMKARAM NALAMASU

IPC: H01L21/033 ,  G03F7/26

CPC classification number: G03F7/26 ,  H01L21/0273 ,  H01L21/3086

Abstract: Methods for reducing line width roughness and/or critical dimension nonuniformity in a photoresist pattern are provided herein. In some embodiments, a method of reducing line width roughness along a sidewall of a patterned photoresist layer disposed atop a substrate includes: (a) depositing a first layer atop the sidewall of the patterned photoresist layer; (b) etching the first layer and the sidewall after depositing the first layer to reduce the line width roughness of the patterned photoresist layer. In some embodiments, (a)-(b) may be repeated until the line width roughness is substantially smooth.

Abstract translation: 本文提供了减少光致抗蚀剂图案中的线宽粗糙度和/或临界尺寸不均匀性的方法。 在一些实施例中，沿着设置在衬底顶部的图案化光致抗蚀剂层的侧壁减小线宽度粗糙度的方法包括：（a）在图案化光致抗蚀剂层的侧壁顶部沉积第一层; （b）在沉积第一层之后蚀刻第一层和侧壁以减小图案化光致抗蚀剂层的线宽粗糙度。 在一些实施例中，（a） - （b）可以重复，直到线宽粗糙度基本上平滑。

公开(公告)号：US20180226355A1

公开(公告)日：2018-08-09

申请号：US15945966

申请日：2018-04-05

Applicant: APPLIED MATERIALS, INC.

Inventor： JUNGRAE PARK ,  WEI-SHENG LEI ,  BRAD EATON ,  JAMES S. PAPANU ,  AJAY KUMAR

IPC: H01L23/544 ,  A47G19/22 ,  B65D47/32 ,  B65D47/24 ,  B23K26/0622 ,  H01L21/78 ,  B23K10/00

CPC classification number: H01L23/544 ,  A47G19/22 ,  A47G19/2272 ,  B23K10/003 ,  B23K26/0624 ,  B65D47/244 ,  B65D47/32 ,  H01L21/78 ,  H01L2223/5446

Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a split laser beam laser scribing process, such as a split shaped laser beam laser scribing process, to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

公开(公告)号：US20140370708A1

公开(公告)日：2014-12-18

申请号：US14301847

申请日：2014-06-11

Applicant: APPLIED MATERIALS, INC.

Inventor： BANQIU WU ,  AJAY KUMAR ,  LEONID DORF ,  SHAHID RAUF ,  KARTIK RAMASWAMY ,  OMKARAM NALAMASU

IPC: H01L21/308 ,  H01L21/3065

CPC classification number: H01L21/31138 ,  G03F7/00 ,  G03F7/0035 ,  G03F7/004 ,  H01J37/32091 ,  H01J37/3233 ,  H01J37/3266 ,  H01L21/0273

Abstract: Methods for reducing the line width roughness on a photoresist pattern are provided herein. In some embodiments, a method of processing a patterned photoresist layer disposed atop a substrate includes flowing a process gas into a processing volume of a process chamber having the substrate disposed therein; forming a plasma within the process chamber from the process gas, wherein the plasma has a ion energy of about 1 eV to about 10 eV; and etching the patterned photoresist layer with species from the plasma to at least one of smooth a line width roughness of a sidewall of the patterned photoresist layer or remove debris.

Abstract translation: 本文提供了减少光致抗蚀剂图案上的线宽粗糙度的方法。 在一些实施例中，处理设置在基板顶上的图案化光致抗蚀剂层的方法包括将工艺气体流入其中布置有衬底的处理室的处理容积; 在所述处理室内从所述处理气体形成等离子体，其中所述等离子体具有约1eV至约10eV的离子能; 以及将来自等离子体的物质的图案化光致抗蚀剂层蚀刻成图案化光致抗蚀剂层的侧壁的线宽粗糙度的至少一个或去除碎屑。