公开(公告)号：US20240404960A1

公开(公告)日：2024-12-05

申请号：US18788906

申请日：2024-07-30

Applicant: Applied Materials, Inc.

Inventor： Guan Huei SEE ,  Ramesh CHIDAMBARAM

IPC: H01L23/538 ,  H01L21/48 ,  H01L21/50 ,  H01L21/60 ,  H01L21/768 ,  H01L23/13 ,  H01L23/14 ,  H01L23/498 ,  H01L23/66 ,  H01L25/065 ,  H01L25/10 ,  H01L27/06 ,  H01Q1/22 ,  H01Q1/24 ,  H05K1/02

Abstract: The present disclosure relates to methods and apparatus for forming thin-form-factor reconstituted substrates and semiconductor device packages for radio frequency applications. The substrate and package structures described herein may be utilized in high-density 2D and 3D integrated devices for 4G, 5G, 6G, and other wireless network systems. In one embodiment, a silicon substrate is structured by laser ablation to include cavities for placement of semiconductor dies and vias for deposition of conductive interconnections. Additionally, one or more cavities are structured to be filled or occupied with a flowable dielectric material. Integration of one or more radio frequency components adjacent the dielectric-filled cavities enables improved performance of the radio frequency elements with reduced signal loss caused by the silicon substrate.

公开(公告)号：US20220037216A1

公开(公告)日：2022-02-03

申请号：US16944285

申请日：2020-07-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Prayudi LIANTO ,  Sik Hin CHI ,  Shih-Chao HUNG ,  Pin Gian GAN ,  Ricardo Fujii VINLUAN ,  Gaurav MEHTA ,  Ramesh CHIDAMBARAM ,  Guan Huei SEE ,  Arvind SUNDARRAJAN ,  Upendra V. UMMETHALA ,  Wei Hao KEW ,  Muhammad Adli Danish Bin ABDULLAH ,  Michael Charles KUTNEY ,  Mark McTaggart WYLIE ,  Amulya Ligorio ATHAYDE ,  Glen T. MORI

IPC: H01L21/66 ,  H01L21/768 ,  H01L21/304 ,  H01L21/306 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/683

Abstract: Methods and apparatus perform backside via reveal processes using a centralized control framework for multiple process tools. In some embodiments, a method for performing a backside via reveal process may include receiving process tool operational parameters from process tools involved in the backside via reveal process by a central controller, receiving sensor metrology data from at least one or more of the process tools involved in the backside via reveal process, and altering the backside reveal process based, at least in part, on the process tool operational parameters and the sensor metrology data by adjusting two or more of the process tools involved in the backside via reveal process. The profile parameters are configured to prevent backside via breakage during a chemical mechanical polishing (CMP) process.

公开(公告)号：US20220359409A1

公开(公告)日：2022-11-10

申请号：US17872731

申请日：2022-07-25

Applicant: Applied Materials, Inc.

Inventor： Guan Huei SEE ,  Ramesh CHIDAMBARAM

IPC: H01L23/538 ,  H01L21/48 ,  H01L23/13 ,  H01L23/14 ,  H01L23/498 ,  H01L25/10 ,  H01L23/66 ,  H01Q1/22 ,  H01Q1/24 ,  H05K1/02 ,  H01L21/50 ,  H01L21/768 ,  H01L25/065 ,  H01L27/06

Abstract: The present disclosure relates to methods and apparatus for forming thin-form-factor reconstituted substrates and semiconductor device packages for radio frequency applications. The substrate and package structures described herein may be utilized in high-density 2D and 3D integrated devices for 4G, 5G, 6G, and other wireless network systems. In one embodiment, a silicon substrate is structured by laser ablation to include cavities for placement of semiconductor dies and vias for deposition of conductive interconnections. Additionally, one or more cavities are structured to be filled or occupied with a flowable dielectric material. Integration of one or more radio frequency components adjacent the dielectric-filled cavities enables improved performance of the radio frequency elements with reduced signal loss caused by the silicon substrate.