公开(公告)号：US20170358431A1

公开(公告)日：2017-12-14

申请号：US15618082

申请日：2017-06-08

Applicant: APPLIED MATERIALS, INC.

Inventor： LEONID DORF ,  JAMES HUGH ROGERS ,  OLIVIER LUERE ,  TRAVIS KOH ,  RAJINDER DHINDSA ,  SUNIL SRINIVASAN

IPC: H01J37/32

CPC classification number: H01J37/32706 ,  H01J37/32146 ,  H01J37/32715 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/334

Abstract: Systems and methods for controlling a voltage waveform at a substrate during plasma processing include applying a shaped pulse bias waveform to a substrate support, the substrate support including an electrostatic chuck, a chucking pole, a substrate support surface and an electrode separated from the substrate support surface by a layer of dielectric material. The systems and methods further include capturing a voltage representative of a voltage at a substrate positioned on the substrate support surface and iteratively adjusting the shaped pulse bias waveform based on the captured signal. In a plasma processing system a thickness and a composition of a layer of dielectric material separating the electrode and the substrate support surface can be selected such that a capacitance between the electrode and the substrate support surface is at least an order of magnitude greater than a capacitance between the substrate support surface and a plasma surface.