公开(公告)号：US20210343496A1

公开(公告)日：2021-11-04

申请号：US17377639

申请日：2021-07-16

Applicant: APPLIED MATERIALS, INC.

Inventor： LEONID DORF ,  TRAVIS KOH ,  OLIVIER LUERE ,  OLIVIER JOUBERT ,  PHILIP A. KRAUS ,  RAJINDER DHINDSA ,  JAMES ROGERS

IPC: H01J37/08 ,  H01J37/248 ,  H01J37/32

Abstract: Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.

公开(公告)号：US20170358431A1

公开(公告)日：2017-12-14

申请号：US15618082

申请日：2017-06-08

Applicant: APPLIED MATERIALS, INC.

Inventor： LEONID DORF ,  JAMES HUGH ROGERS ,  OLIVIER LUERE ,  TRAVIS KOH ,  RAJINDER DHINDSA ,  SUNIL SRINIVASAN

IPC: H01J37/32

CPC classification number: H01J37/32706 ,  H01J37/32146 ,  H01J37/32715 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/334

Abstract: Systems and methods for controlling a voltage waveform at a substrate during plasma processing include applying a shaped pulse bias waveform to a substrate support, the substrate support including an electrostatic chuck, a chucking pole, a substrate support surface and an electrode separated from the substrate support surface by a layer of dielectric material. The systems and methods further include capturing a voltage representative of a voltage at a substrate positioned on the substrate support surface and iteratively adjusting the shaped pulse bias waveform based on the captured signal. In a plasma processing system a thickness and a composition of a layer of dielectric material separating the electrode and the substrate support surface can be selected such that a capacitance between the electrode and the substrate support surface is at least an order of magnitude greater than a capacitance between the substrate support surface and a plasma surface.

公开(公告)号：US20190259562A1

公开(公告)日：2019-08-22

申请号：US16405377

申请日：2019-05-07

Applicant: APPLIED MATERIALS, INC.

Inventor： LEONID DORF ,  TRAVIS KOH ,  OLIVIER LUERE ,  OLIVIER JOUBERT ,  PHILIP A. KRAUS ,  RAJINDER DHINDSA ,  JAMES ROGERS

IPC: H01J37/08 ,  H01J37/248

Abstract: Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.

公开(公告)号：US20180226225A1

公开(公告)日：2018-08-09

申请号：US15424405

申请日：2017-02-03

Applicant: APPLIED MATERIALS, INC.

Inventor： TRAVIS KOH ,  PHILIP ALLAN KRAUS ,  LEONID DORF ,  PRABU GOPALRAJA

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01J37/32045 ,  H01J37/32027 ,  H01J37/32697 ,  H01J37/32715 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6833

Abstract: Systems and methods for tunable workpiece biasing in a plasma reactor are provided herein. In some embodiments, a system includes: a plasma chamber that performs plasma processing on a workpiece, a first pulsed voltage source, coupled directly to a workpiece, a second pulsed voltage source, coupled capacitively to the workpiece, and a biasing controller comprising one or more processors, and memory, wherein the memory comprises a set of computer instructions that when executed by the one or more processors, independently controls the first pulsed voltage source and the second pulsed voltage source based on one or more parameters of the first pulsed voltage source and the second pulsed voltage source in order to tailor ion energy distribution of the flux of ions directed to the workpiece.

公开(公告)号：US20160027616A1

公开(公告)日：2016-01-28

申请号：US14341492

申请日：2014-07-25

Applicant: APPLIED MATERIALS, INC.

Inventor： KARTIK RAMASWAMY ,  YANG YANG ,  STEVEN LANE ,  LAWRENCE WONG ,  JOSEPH F. AUBUCHON ,  TRAVIS KOH

IPC: H01J37/32 ,  H01L21/67 ,  H01J37/244

CPC classification number: H01J37/32165 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32174

Abstract: Spatial distribution of RF power delivered to plasma in a processing chamber is controlled using an arrangement of primary and secondary inductors, wherein the current through the secondary inductors affects the spatial distribution of the plasma. The secondary inductors are configured to resonate at respectively different frequencies. A first secondary inductor is selectively excited to resonance, during a first time period within a duty cycle, by delivering power to a primary inductor at the resonant frequency of the first secondary inductor. A second secondary inductor is selectively excited to resonance, during a second time period within a duty cycle, by delivering power to a primary inductor at the resonant frequency of the second secondary inductor. The secondary inductors are isolated from one another and terminated such that substantially all current that passes through them and into the plasma results from mutual inductance with a primary inductor.

Abstract translation: 使用初级和次级电感器的布置来控制传送到处理室中的等离子体的RF功率的空间分布，其中通过次级电感器的电流影响等离子体的空间分布。 次级电感器被配置为分别在不同的频率下谐振。 通过在第一次级电感器的谐振频率处向初级电感器输送功率，在占空比的第一时间段期间，选择性地激励第一次级电感器进行谐振。 通过在第二次级电感器的谐振频率处向初级电感器输送功率，在占空比的第二时间周期期间，选择性地激励第二次级电感器进行谐振。 次级电感器彼此隔离并且端接，使得通过它们并进入等离子体的基本上所有的电流源于与初级电感器的互感。

公开(公告)号：US20200266022A1

公开(公告)日：2020-08-20

申请号：US16867034

申请日：2020-05-05

Applicant: APPLIED MATERIALS, INC.

Inventor： LEONID DORF ,  TRAVIS KOH ,  OLIVIER LUERE ,  OLIVIER JOUBERT ,  PHILIP A. KRAUS ,  RAJINDER DHINDSA ,  JAMES ROGERS

IPC: H01J37/08 ,  H01J37/32 ,  H01J37/248

Abstract: Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse—bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.

公开(公告)号：US20170162365A1

公开(公告)日：2017-06-08

申请号：US15437757

申请日：2017-02-21

Applicant: APPLIED MATERIALS, INC.

Inventor： STEVEN LANE ,  TZA-JING GUNG ,  KARTIK RAMASWAMY ,  TRAVIS KOH ,  JOSEPH F. AUBUCHON ,  YANG YANG

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/32669

Abstract: Methods and apparatus for controlling a magnetic field in a plasma chamber are provided herein. In some embodiments, a process chamber liner may include a cylindrical body, an inner electromagnetic cosine-theta (cos θ) coil ring including a first plurality of inner coils embedded in the body and configured to generate a magnetic field in a first direction, and an outer electromagnetic cosine-theta (cos θ) coil ring including a second plurality of outer coils embedded in the body and configured to generate a magnetic field in a second direction orthogonal to the first direction, wherein the outer electromagnetic cos θ coil ring is disposed concentrically about the inner electromagnetic cos θ coil ring.

公开(公告)号：US20160027613A1

公开(公告)日：2016-01-28

申请号：US14339990

申请日：2014-07-24

Applicant: APPLIED MATERIALS, INC.

Inventor： STEVEN LANE ,  TZA-JING GUNG ,  KARTIK RAMASWAMY ,  TRAVIS KOH ,  JOSEPH F. AUBUCHON ,  YANG YANG

IPC: H01J37/32 ,  H01L21/67 ,  H01J37/147

CPC classification number: H01J37/3211 ,  H01J37/32669

Abstract: Methods and apparatus for controlling a magnetic field in a plasma chamber are provided herein. In some embodiments, a process chamber liner may include a cylindrical body, an inner electromagnetic cosine-theta (cos θ) coil ring including a first plurality of inner coils embedded in the body and configured to generate a magnetic field in a first direction, and an outer electromagnetic cosine-theta (cos θ) coil ring including a second plurality of outer coils embedded in the body and configured to generate a magnetic field in a second direction orthogonal to the first direction, wherein the outer electromagnetic cos θ coil ring is disposed concentrically about the inner electromagnetic cos θ coil ring.

Abstract translation: 本文提供了用于控制等离子体室中的磁场的方法和装置。 在一些实施例中，处理室衬套可以包括圆柱形主体，内部电磁余弦-θ（cos＆amp; thetas））线圈，其包括嵌入在主体中并被配置为在第一方向上产生磁场的第一多个内部线圈， 以及外部电磁余弦-θ（cos＆amp;θ）线圈，其包括嵌入在所述主体中的第二多个外部线圈，并被配置为在与所述第一方向正交的第二方向上产生磁场，其中所述外部电磁场和所述外部电磁场; 线圈环围绕内部电磁场和心轴同心放置; 线圈环