公开(公告)号：US20140212994A1

公开(公告)日：2014-07-31

申请号：US14162521

申请日：2014-01-23

Applicant: APPLIED MATERIALS, INC.

Inventor： Hun Sang KIM ,  Sang Wook KIM ,  Anisul H. KHAN

IPC: H01L21/67 ,  H01L21/32 ,  H01L21/66

CPC classification number: H01L22/30 ,  H01J37/321 ,  H01J37/32651 ,  H01L21/0337 ,  H01L21/32136 ,  H01L21/32139

Abstract: Embodiments of the present disclosure generally provide apparatus and method for improving processing uniformity by reducing external magnetic noises. One embodiment of the present disclosure provides an apparatus for processing semiconductor substrates. The apparatus includes a chamber body defining a vacuum volume for processing one or more substrate therein, and a shield assembly for shielding magnetic flux from the chamber body disposed outside the chamber body, wherein the shield assembly comprises a bottom plate disposed between the chamber body and the ground to shield magnetic flux from the earth.

Abstract translation: 本公开的实施例通常提供通过减少外部磁噪声来改善处理均匀性的装置和方法。 本公开的一个实施例提供了一种用于处理半导体衬底的装置。 该装置包括限定用于在其中处理一个或多个基板的真空容积的室主体和用于屏蔽设置在室主体外部的室主体的磁通的屏蔽组件，其中屏蔽组件包括设置在室主体和 用于屏蔽来自地球的磁通的地面。

公开(公告)号：US20190198338A1

公开(公告)日：2019-06-27

申请号：US15853243

申请日：2017-12-22

Applicant: Applied Materials, Inc.

Inventor： Sang Wook KIM ,  Zhibin WANG ,  Kyoungjin LEE ,  Byungkook KONG

IPC: H01L21/308 ,  H01L21/02 ,  H01L21/311 ,  H01L21/027

Abstract: Embodiments of the present disclosure generally provide a method and apparatus for forming features in a material layer utilizing EUV technologies. In one embodiment, a method of patterning a substrate includes disposing a patterned photoresist layer on a mask layer disposed on a substrate, wherein the patterned photoresist layer has openings with different widths defined in the patterned photoresist layer, forming a compensatory layer along sidewalls of the patterned photoresist layer to modify the widths of the openings and etching the mask layer through the openings with the modified width.

公开(公告)号：US20190371617A1

公开(公告)日：2019-12-05

申请号：US16506520

申请日：2019-07-09

Applicant: Applied Materials, Inc.

Inventor： Chang Wook DOH ,  Zhibin WANG ,  Byungkook KONG ,  Sang Wook KIM ,  Sang-Jun CHOI

IPC: H01L21/3065 ,  H01J37/32

Abstract: Systems and methods discussed herein are directed towards processing of substrates, including forming a plurality of features in a target layer on a substrate. The formation of the plurality of features includes a main etch operation that forms the plurality of features to a first depth in the target layer. The main etch operation is followed by a phase shift sync pulsing (PSSP) operation, and these two operations are repeated iteratively to form the features to a predetermined depth. The PSSP operation includes one or more cycles of RF source power and RF bias power, this cycle deposits a protective coating in and on the features and then etches a portion of the protective coating to expose portions of the feature.

公开(公告)号：US20150144154A1

公开(公告)日：2015-05-28

申请号：US14522864

申请日：2014-10-24

Applicant: Applied Materials, Inc.

Inventor： Kee Young CHO ,  Sang Wook KIM ,  Joo Won HAN ,  Han Soo CHO

IPC: B08B7/00

CPC classification number: B08B7/0035 ,  C11D11/0041 ,  C23C16/4405 ,  H01J37/32862

Abstract: Embodiments of the disclosure generally relate to methods of removing etch by-products from the plasma processing chamber using carbon monoxide or carbon dioxide. In one embodiment, a method for dry cleaning a processing chamber includes exposing a chamber component disposed within the processing chamber in absence of a substrate disposed therein to a first cleaning gas mixture comprising carbon monoxide or carbon dioxide, wherein a portion of the chamber component has a film layer or residues deposited thereon, and the film layer or residues comprises a refractory metal and/or a metal silicide.

Abstract translation: 本公开的实施方案一般涉及使用一氧化碳或二氧化碳从等离子体处理室去除蚀刻副产物的方法。 在一个实施例中，一种用于干燥处理室的方法包括在不存在设置在其中的基板的情况下将设置在处理室内的室部件曝光到包含一氧化碳或二氧化碳的第一清洁气体混合物中，其中室部件的一部分具有 沉积在其上的膜层或残余物，并且所述膜层或残余物包含难熔金属和/或金属硅化物。