公开(公告)号：US20190333764A1

公开(公告)日：2019-10-31

申请号：US15965621

申请日：2018-04-27

Applicant: Applied Materials, Inc.

Inventor： Kelvin CHAN ,  Travis KOH ,  Simon HUANG ,  Philip Allan KRAUS

IPC: H01L21/02 ,  C23C16/26 ,  C23C16/52

Abstract: Embodiments include a method of processing a substrate. In an embodiment, the method comprises flowing one or more source gasses into a processing chamber, and inducing a plasma from the source gases with a plasma source that is operated in a first mode. In an embodiment, the method may further comprise biasing the substrate with a DC power source that is operated in a second mode. In an embodiment, the method may further comprise depositing a film on the substrate.

公开(公告)号：US20210134561A1

公开(公告)日：2021-05-06

申请号：US17144973

申请日：2021-01-08

Applicant: APPLIED MATERIALS, INC.

Inventor： Travis KOH ,  Philip Allan KRAUS ,  Leonid DORF ,  Prabu GOPALRAJA

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: Systems and methods for tunable workpiece biasing in a plasma reactor are provided herein. In some embodiments, a system includes: a plasma chamber that performs plasma processing on a workpiece, a first pulsed voltage source, coupled directly to a workpiece, a second pulsed voltage source, coupled capacitively to the workpiece, and a biasing controller comprising one or more processors, and memory, wherein the memory comprises a set of computer instructions that when executed by the one or more processors, independently controls the first pulsed voltage source and the second pulsed voltage source based on one or more parameters of the first pulsed voltage source and the second pulsed voltage source in order to tailor ion energy distribution of the flux of ions directed to the workpiece.

公开(公告)号：US20180166249A1

公开(公告)日：2018-06-14

申请号：US15834939

申请日：2017-12-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Leonid DORF ,  Travis KOH ,  Olivier LUERE ,  Olivier JOUBERT ,  Philip A. KRAUS ,  Rajinder DHINDSA ,  JAMES HUGH ROGERS

IPC: H01J37/08 ,  H01J37/248

CPC classification number: H01J37/08 ,  H01J37/248

Abstract: Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.