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公开(公告)号:US20230280150A1
公开(公告)日:2023-09-07
申请号:US18317776
申请日:2023-05-15
Applicant: Applied Materials, Inc.
Inventor: Sathyendra GHANTASALA , Leonid DORF , Evgeny KAMENETSKIY , Peter MURAOKA , Denis Martin KOOSAU , Rajinder DHINDSA , Andreas SCHMID
IPC: G01B7/06 , H01L21/67 , H01J37/32 , H01L21/687
CPC classification number: G01B7/08 , H01L21/67069 , H01J37/32642 , H01L21/68721 , H01J2237/24564
Abstract: Disclosed herein is a method and apparatus for controlling surface characteristics by measuring capacitance of a process kit ring. The method includes interfacing a ring with a jig assembly for measuring capacitance in at least a first location of the ring. The ring has that includes a top surface, a bottom surface, and an inner surface opposite an outer surface. At least the bottom surface has an external coating placed thereon. The method further includes contacting a measuring device to the first location on the outer surface proximate the bottom surface. The measuring device contacts an opening in the external coating to the body. The measuring device contacts a first conductive member that is electrically coupled to the ring. A capacitance is measured on the measuring device. The capacitance across the top surface is measured.
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公开(公告)号:US20210134561A1
公开(公告)日:2021-05-06
申请号:US17144973
申请日:2021-01-08
Applicant: APPLIED MATERIALS, INC.
Inventor: Travis KOH , Philip Allan KRAUS , Leonid DORF , Prabu GOPALRAJA
IPC: H01J37/32 , H01L21/67 , H01L21/683
Abstract: Systems and methods for tunable workpiece biasing in a plasma reactor are provided herein. In some embodiments, a system includes: a plasma chamber that performs plasma processing on a workpiece, a first pulsed voltage source, coupled directly to a workpiece, a second pulsed voltage source, coupled capacitively to the workpiece, and a biasing controller comprising one or more processors, and memory, wherein the memory comprises a set of computer instructions that when executed by the one or more processors, independently controls the first pulsed voltage source and the second pulsed voltage source based on one or more parameters of the first pulsed voltage source and the second pulsed voltage source in order to tailor ion energy distribution of the flux of ions directed to the workpiece.
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公开(公告)号:US20190228952A1
公开(公告)日:2019-07-25
申请号:US16253655
申请日:2019-01-22
Applicant: Applied Materials, Inc.
Inventor: Leonid DORF , Anurag Kumar MISHRA , Olivier LUERE , Rajinder DHINDSA , James ROGERS , Denis M. KOOSAU , Sunil SRINIVASAN
IPC: H01J37/32 , H01L21/683 , H01L21/3065 , H01L21/67
Abstract: Embodiments of the present disclosure generally relate to methods and related process equipment for forming structures on substrates, such as etching high aspect ratio structures within one or more layers formed over a substrate. The methods and related equipment described herein can improve the formation of the structures on substrates by controlling the curvature of the plasma-sheath boundary near the periphery of the substrate, for example, by generating a substantially flat plasma-sheath boundary over the entire substrate (i.e., center to edge). The methods and related equipment described below can provide control over the curvature of the plasma-sheath boundary, including generation of the flat plasma-sheath boundary by applying RF power to an edge ring surrounding the substrate using a separate and independent RF power source.
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公开(公告)号:US20240194446A1
公开(公告)日:2024-06-13
申请号:US18063888
申请日:2022-12-09
Applicant: Applied Materials, Inc.
Inventor: Linying CUI , James ROGERS , Keith HERNANDEZ , William CHIN , Leonid DORF
IPC: H01J37/32
CPC classification number: H01J37/32155 , H01J37/32128 , H01J37/32568 , H01J2237/024 , H01J2237/24507 , H01J2237/334
Abstract: Embodiments of the disclosure include an apparatus and a method for controlling plasma uniformity by controlling plasma density in the bulk plasma over the center region and circumferential edge region of the substrate. Plasma uniformity can be controlled by use of an RF tuning circuit coupled to one of a plurality of electrodes positioned relative to a substrate during plasma processing. By adjusting the electrical characteristics of at least one of the RF tuning circuits, the effect that the generated RF fundamental frequency and related RF harmonic frequencies have on the plasma processing results can be controlled. Beneficially, the use of one or more of the tuning circuits and methods of using the same may be used to provide individual tuning knobs for controlling reactive neutral species concentration, ion energy and angular distribution, ion directionality and directionality uniformity, and separately controlling ion flux and reactive neutral species uniformity across the surface of the substrate.
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公开(公告)号:US20220037121A1
公开(公告)日:2022-02-03
申请号:US17315234
申请日:2021-05-07
Applicant: Applied Materials, Inc.
Inventor: Leonid DORF , Rajinder DHINDSA , James ROGERS , Daniel Sang BYUN , Evgeny KAMENETSKIY , Yue GUO , Kartik RAMASWAMY , Valentin N. TODOROW , Olivier LUERE
IPC: H01J37/32 , H01L21/683 , H01L21/3065
Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.
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公开(公告)号:US20210254957A1
公开(公告)日:2021-08-19
申请号:US17161271
申请日:2021-01-28
Applicant: Applied Materials, Inc.
Inventor: Sathyendra GHANTASALA , Leonid DORF , Evgeny KAMENETSKIY , Peter MURAOKA , Denis M. KOOSAU , Rajinder DHINDSA , Andreas SCHMID
IPC: G01B7/06 , H01L21/67 , H01L21/687 , H01J37/32
Abstract: Disclosed herein is a method and apparatus for controlling surface characteristics by measuring capacitance of a process kit ring. The method includes interfacing a ring with a jig assembly for measuring capacitance in at least a first location of the ring. The ring has that includes a top surface, a bottom surface, and an inner surface opposite an outer surface. At least the bottom surface has an external coating placed thereon. The method further includes contacting a measuring device to the first location on the outer surface proximate the bottom surface. The measuring device contacts an opening in the external coating to the body. The measuring device contacts a first conductive member that is electrically coupled to the ring. A capacitance is measured on the measuring device. The capacitance across the top surface is measured.
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公开(公告)号:US20200234922A1
公开(公告)日:2020-07-23
申请号:US16790086
申请日:2020-02-13
Applicant: Applied Materials, Inc.
Inventor: Leonid DORF , Evgeny KAMENETSKIY , James ROGERS , Olivier LUERE , Rajinder DHINDSA , Viacheslav PLOTNIKOV
IPC: H01J37/32 , H01L21/311
Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.
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公开(公告)号:US20240395502A1
公开(公告)日:2024-11-28
申请号:US18791966
申请日:2024-08-01
Applicant: Applied Materials, Inc.
Inventor: Leonid DORF , Evgeny KAMENETSKIY , James ROGERS , Olivier LUERE , Rajinder DHINDSA , Viacheslav PLOTNIKOV
IPC: H01J37/32 , H01L21/311 , H01L21/683
Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.
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公开(公告)号:US20230030927A1
公开(公告)日:2023-02-02
申请号:US17959074
申请日:2022-10-03
Applicant: Applied Materials, Inc.
Inventor: Leonid DORF , Rajinder DHINDSA , James ROGERS , Daniel Sang BYUN , Evgeny KAMENETSKIY , Yue GUO , Kartik RAMASWAMY , Valentin N. TODOROW , Olivier LUERE , Linying CUI
IPC: H01J37/32 , H01L21/311 , H01L21/3065 , H01L21/683
Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.
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公开(公告)号:US20200352017A1
公开(公告)日:2020-11-05
申请号:US16933311
申请日:2020-07-20
Applicant: Applied Materials, Inc.
Inventor: Leonid DORF , Olivier LUERE , Rajinder DHINDSA , James ROGERS , Sunil SRINIVASAN , Anurag Kumar MISHRA
Abstract: Embodiments of this disclosure describe an electrode biasing scheme that enables maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate that consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.
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