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    SYSTEM FOR TUNABLE WORKPIECE BIASING IN A PLASMA REACTOR
    2.
    发明申请
    SYSTEM FOR TUNABLE WORKPIECE BIASING IN A PLASMA REACTOR 有权

    公开(公告)号：US20210134561A1

    公开(公告)日：2021-05-06

    申请号：US17144973

    申请日：2021-01-08

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Travis KOH ,  Philip Allan KRAUS ,  Leonid DORF ,  Prabu GOPALRAJA

    IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

    Abstract: Systems and methods for tunable workpiece biasing in a plasma reactor are provided herein. In some embodiments, a system includes: a plasma chamber that performs plasma processing on a workpiece, a first pulsed voltage source, coupled directly to a workpiece, a second pulsed voltage source, coupled capacitively to the workpiece, and a biasing controller comprising one or more processors, and memory, wherein the memory comprises a set of computer instructions that when executed by the one or more processors, independently controls the first pulsed voltage source and the second pulsed voltage source based on one or more parameters of the first pulsed voltage source and the second pulsed voltage source in order to tailor ion energy distribution of the flux of ions directed to the workpiece.

    PROCESSING WITH POWERED EDGE RING
    3.
    发明申请
    PROCESSING WITH POWERED EDGE RING 审中-公开

    公开(公告)号：US20190228952A1

    公开(公告)日：2019-07-25

    申请号：US16253655

    申请日：2019-01-22

    Applicant: Applied Materials, Inc.

    Inventor： Leonid DORF ,  Anurag Kumar MISHRA ,  Olivier LUERE ,  Rajinder DHINDSA ,  James ROGERS ,  Denis M. KOOSAU ,  Sunil SRINIVASAN

    IPC: H01J37/32 ,  H01L21/683 ,  H01L21/3065 ,  H01L21/67

    Abstract: Embodiments of the present disclosure generally relate to methods and related process equipment for forming structures on substrates, such as etching high aspect ratio structures within one or more layers formed over a substrate. The methods and related equipment described herein can improve the formation of the structures on substrates by controlling the curvature of the plasma-sheath boundary near the periphery of the substrate, for example, by generating a substantially flat plasma-sheath boundary over the entire substrate (i.e., center to edge). The methods and related equipment described below can provide control over the curvature of the plasma-sheath boundary, including generation of the flat plasma-sheath boundary by applying RF power to an edge ring surrounding the substrate using a separate and independent RF power source.

    CHAMBER IMPEDANCE MANAGEMENT IN A PROCESSING CHAMBER
    4.
    发明公开
    CHAMBER IMPEDANCE MANAGEMENT IN A PROCESSING CHAMBER 审中-公开

    公开(公告)号：US20240194446A1

    公开(公告)日：2024-06-13

    申请号：US18063888

    申请日：2022-12-09

    Applicant: Applied Materials, Inc.

    Inventor： Linying CUI ,  James ROGERS ,  Keith HERNANDEZ ,  William CHIN ,  Leonid DORF

    IPC: H01J37/32

    CPC classification number: H01J37/32155 ,  H01J37/32128 ,  H01J37/32568 ,  H01J2237/024 ,  H01J2237/24507 ,  H01J2237/334

    Abstract: Embodiments of the disclosure include an apparatus and a method for controlling plasma uniformity by controlling plasma density in the bulk plasma over the center region and circumferential edge region of the substrate. Plasma uniformity can be controlled by use of an RF tuning circuit coupled to one of a plurality of electrodes positioned relative to a substrate during plasma processing. By adjusting the electrical characteristics of at least one of the RF tuning circuits, the effect that the generated RF fundamental frequency and related RF harmonic frequencies have on the plasma processing results can be controlled. Beneficially, the use of one or more of the tuning circuits and methods of using the same may be used to provide individual tuning knobs for controlling reactive neutral species concentration, ion energy and angular distribution, ion directionality and directionality uniformity, and separately controlling ion flux and reactive neutral species uniformity across the surface of the substrate.

    APPARATUS AND METHOD FOR CONTROLLING EDGE RING VARIATION
    6.
    发明申请
    APPARATUS AND METHOD FOR CONTROLLING EDGE RING VARIATION 有权

    公开(公告)号：US20210254957A1

    公开(公告)日：2021-08-19

    申请号：US17161271

    申请日：2021-01-28

    Applicant: Applied Materials, Inc.

    Inventor： Sathyendra GHANTASALA ,  Leonid DORF ,  Evgeny KAMENETSKIY ,  Peter MURAOKA ,  Denis M. KOOSAU ,  Rajinder DHINDSA ,  Andreas SCHMID

    IPC: G01B7/06 ,  H01L21/67 ,  H01L21/687 ,  H01J37/32

    Abstract: Disclosed herein is a method and apparatus for controlling surface characteristics by measuring capacitance of a process kit ring. The method includes interfacing a ring with a jig assembly for measuring capacitance in at least a first location of the ring. The ring has that includes a top surface, a bottom surface, and an inner surface opposite an outer surface. At least the bottom surface has an external coating placed thereon. The method further includes contacting a measuring device to the first location on the outer surface proximate the bottom surface. The measuring device contacts an opening in the external coating to the body. The measuring device contacts a first conductive member that is electrically coupled to the ring. A capacitance is measured on the measuring device. The capacitance across the top surface is measured.

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