公开(公告)号：US20030161951A1

公开(公告)日：2003-08-28

申请号：US10090103

申请日：2002-02-27

申请人： Applied Materials, Inc. a Delaware Corporation

发明人： Zheng Yuan ,  Xinyun Xia

IPC分类号： C23C016/00 ,  B05D005/12

CPC分类号： H01L21/31612 ,  C23C16/402 ,  C23C16/45525 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/32105

摘要： A thin layer of silicon oxide is formed by cyclic introduction of a silicon-containing precursor gas and an oxidizing gas separated by an intervening purge step. The resulting thin oxide layer enables subsequent conventional CVD of oxide to produce a more uniform deposited oxide layer over nonhomogenous surfaces, for example the silicon nitride mask/thermal oxide liner surfaces created during fabrication of shallow trench isolation structures.

摘要翻译： 通过循环引入含硅前体气体和通过中间吹扫步骤分离的氧化气体形成氧化硅薄层。 所得到的薄氧化物层使得随后的常规氧化物CVD能够在不均匀的表面上产生更均匀的沉积氧化物层，例如在浅沟槽隔离结构的制造期间产生的氮化硅掩模/热氧化物衬里表面。

公开(公告)号：US20040060514A1

公开(公告)日：2004-04-01

申请号：US10674569

申请日：2003-09-29

申请人： APPLIED MATERIALS, INC. A Delaware corporation

发明人： Karthik Janakiraman ,  Nitin Ingle ,  Zheng Yuan ,  Steven Gianoulakis

IPC分类号： C23C016/00

CPC分类号： C23C16/455 ,  C23C16/45565

摘要： A gas distribution showerhead is designed to allow deposition of uniformly thick films over a wide range of showerhead-to-wafer spacings. In accordance with one embodiment of the present invention, the number, width, and/or depth of orifices inlet to the faceplate are reduced in order to increase flow resistance and thereby elevate pressure upstream of the faceplate. This elevated upstream gas flow pressure in turn reduces variation in the velocity of gas flowed through center portions of the showerhead relative to edge portions, thereby ensuring uniformity in thickness of film deposited on the edge or center portions of the wafer.

摘要翻译： 气体分配喷头被设计成允许在宽范围的喷头到晶片间隔上沉积均匀的厚膜。 根据本发明的一个实施例，为了增加流动阻力，从而提高面板上游的压力，减小了面板入口孔数，宽度和/或深度。 这种升高的上游气体流量压力又降低了通过喷头的中心部分相对于边缘部分流动的气体的速度变化，从而确保沉积在晶片的边缘或中心部分上的膜的厚度均匀。