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公开(公告)号：US20210116368A1
公开(公告)日：2021-04-22
申请号：US16659938
申请日：2019-10-22
Applicant: Applied Materials Israel Ltd.
Inventor： Amir Shoham , Binyamin Kirshner , David Goldovsky , Nitzan Chamiel
Abstract: Systems and methods for optical inspection of a sample are provided. Radiation scattered from the sample includes a first portion having a first polarization state and a second portion having a second polarization state that is a mirror image of the first polarization state. The first polarization state of the first portion of the scattered radiation is transposed using a polarizing mirroring device so that the scattered radiation output from the polarizing mirroring device has substantially the second polarization state.
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公开(公告)号：US20210349019A1
公开(公告)日：2021-11-11
申请号：US17243548
申请日：2021-04-28
Applicant: APPLIED MATERIALS ISRAEL LTD.
Inventor： Yechiel Kapoano , Binyamin Kirshner , David Goldovsky
Abstract: A system for optical imaging of defects on unpatterned wafers that includes an illumination module, relay optics, a segmented polarizer, and a detector. The illumination module is configured to produce a polarized light beam incident on a selectable area of an unpatterned wafer. The relay optics is configured to collect and guide, radiation scattered off the area, onto the polarizer. The detector is configured to sense scattered radiation passed through the polarizer. The polarizer includes at least four polarizer segments, such that (i) boundary lines, separating the polarizer segments, are curved outwards relative to a plane, perpendicular to the segmented polarizer, unless the boundary line is on the perpendicular plane, and (ii) when the area comprises a typical defect, a signal-to-noise ratio of scattered radiation, passed through the polarizer segments, is increased as compared to when utilizing a linear polarizer.
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公开(公告)号：US11474437B2
公开(公告)日：2022-10-18
申请号：US16861094
申请日：2020-04-28
Applicant: APPLIED MATERIALS ISRAEL LTD.
Inventor： Yechiel Kapoano , Binyamin Kirshner , David Goldovsky
Abstract: Disclosed herein is a method for increasing signal-to-noise (SNR) in optical imaging of defects on unpatterned wafers. The method includes: (i) irradiating a region of an unpatterned wafer with a substantially polarized, incident light beam, and (ii) employing relay optics to collect and guide, radiation scattered off the region, onto a segmented polarizer comprising at least four polarizer segments characterized by respective dimensions and polarization directions. The respective dimensions and polarization direction of each of the at least four polarizer segments are such that an overall power of background noise radiation, generated in the scattering of the incident light beam from the region and passed through all of the at least four polarizer segments, is decreased as compared to utilizing a linear polarizer.
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Patent Agency Ranking
公开(公告)号：US20210333719A1
公开(公告)日：2021-10-28
申请号：US16861094
申请日：2020-04-28
Applicant: APPLIED MATERIALS ISRAEL LTD.
Inventor： Yechiel Kapoano , Binyamin Kirshner , David Goldovsky
IPC: G03F7/20 , G01N21/88 , G01N21/956 , G01N21/95 , G03F1/84
Abstract: Disclosed herein is a method for increasing signal-to-noise (SNR) in optical imaging of defects on unpatterned wafers. The method includes: (i) irradiating a region of an unpatterned wafer with a substantially polarized, incident light beam, and (ii) employing relay optics to collect and guide, radiation scattered off the region, onto a segmented polarizer comprising at least four polarizer segments characterized by respective dimensions and polarization directions. The respective dimensions and polarization direction of each of the at least four polarizer segments are such that an overall power of background noise radiation, generated in the scattering of the incident light beam from the region and passed through all of the at least four polarizer segments, is decreased as compared to utilizing a linear polarizer.
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公开(公告)号：US11105740B2
公开(公告)日：2021-08-31
申请号：US16659938
申请日：2019-10-22
Applicant: Applied Materials Israel Ltd.
Inventor： Amir Shoham , Binyamin Kirshner , David Goldovsky , Nitzan Chamiel
IPC: G01N21/47 , G01N21/21 , G01N21/88 , G01N21/956 , G01N21/95
Abstract: Systems and methods for optical inspection of a sample are provided. Radiation scattered from the sample includes a first portion having a first polarization state and a second portion having a second polarization state that is a mirror image of the first polarization state. The first polarization state of the first portion of the scattered radiation is transposed using a polarizing mirroring device so that the scattered radiation output from the polarizing mirroring device has substantially the second polarization state.
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公开(公告)号：US11713964B1
公开(公告)日：2023-08-01
申请号：US17574055
申请日：2022-01-12
Applicant: Applied Materials Israel Ltd.
Inventor： David Goldovsky , Ido Almog , Ronny Barnea
IPC: G01B15/04 , H01J37/285 , H01J37/244 , H01J37/28
CPC classification number: G01B15/04 , H01J37/244 , H01J37/28 , H01J37/285
Abstract: Disclosed herein is a system for profiling holes in non-opaque samples. The system includes: (i) an e-beam source configured to project an e-beam into an inspection hole in a sample, such that a wall of the inspection hole is struck and a localized electron cloud is produced; (ii) a light sensing infrastructure configured to sense cathodoluminescent light, generated by the electron cloud; and (iii) a computational module configured to analyze the measured signal to obtain the probed depth at which the wall was struck. A lateral offset, and/or orientation, of the e-beam is controllable, so as to allow generating localized electron clouds at each of a plurality of depths inside the inspection hole, and thereby obtain information at least about a two-dimensional geometry of the inspection hole.
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公开(公告)号：US20230221112A1
公开(公告)日：2023-07-13
申请号：US17574055
申请日：2022-01-12
Applicant: Applied Materials Israel Ltd.
Inventor： David Goldovsky , Ido Almog , Ronny Barnea
IPC: G01B15/04 , H01J37/28 , H01J37/244 , H01J37/285
CPC classification number: G01B15/04 , H01J37/28 , H01J37/244 , H01J37/285
Abstract: Disclosed herein is a system for profiling holes in non-opaque samples. The system includes: (i) an e-beam source configured to project an e-beam into an inspection hole in a sample, such that a wall of the inspection hole is struck and a localized electron cloud is produced; (ii) a light sensing infrastructure configured to sense cathodoluminescent light, generated by the electron cloud; and (iii) a computational module configured to analyze the measured signal to obtain the probed depth at which the wall was struck. A lateral offset, and/or orientation, of the e-beam is controllable, so as to allow generating localized electron clouds at each of a plurality of depths inside the inspection hole, and thereby obtain information at least about a two-dimensional geometry of the inspection hole.
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公开(公告)号：US11525777B2
公开(公告)日：2022-12-13
申请号：US17243548
申请日：2021-04-28
Applicant: APPLIED MATERIALS ISRAEL LTD.
Inventor： Yechiel Kapoano , Binyamin Kirshner , David Goldovsky
Abstract: A system for optical imaging of defects on unpatterned wafers that includes an illumination module, relay optics, a segmented polarizer, and a detector. The illumination module is configured to produce a polarized light beam incident on a selectable area of an unpatterned wafer. The relay optics is configured to collect and guide, radiation scattered off the area, onto the polarizer. The detector is configured to sense scattered radiation passed through the polarizer. The polarizer includes at least four polarizer segments, such that (i) boundary lines, separating the polarizer segments, are curved outwards relative to a plane, perpendicular to the segmented polarizer, unless the boundary line is on the perpendicular plane, and (ii) when the area comprises a typical defect, a signal-to-noise ratio of scattered radiation, passed through the polarizer segments, is increased as compared to when utilizing a linear polarizer.
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