公开(公告)号：US20150322587A1

公开(公告)日：2015-11-12

申请号：US14707980

申请日：2015-05-08

Applicant: APPLIED Materials, Inc.

Inventor： Chris Pabelico ,  Roey Shaviv ,  John L. Klocke ,  Ismail T. Emesh

IPC: C25D7/12 ,  H01L21/288 ,  H01L21/768

CPC classification number: H01L21/76882 ,  C25D3/12 ,  C25D3/38 ,  C25D5/10 ,  C25D5/12 ,  C25D5/50 ,  C25D5/505 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76879 ,  H01L21/76898 ,  H01L2221/1089

Abstract: A method for at least partially filling a feature on a workpiece includes electrochemically depositing a metallization layer on a seed layer formed on a workpiece using a plating electrolyte having at least one plating metal ion, a pH range of about 6 to about 13, an organic additive, and first and second metal complexing agents.

Abstract translation: 一种用于至少部分地填充工件上的特征的方法包括使用具有至少一个电镀金属离子，pH范围为约6至约13的电镀电解质，有机物，电化学沉积金属化层在形成在工件上的种子层上电化学沉积金属化层 添加剂，第一和第二金属络合剂。

公开(公告)号：US20190341302A1

公开(公告)日：2019-11-07

申请号：US16401133

申请日：2019-05-02

Applicant: Applied Materials, Inc.

Inventor： Yu Lei ,  Sang-Hyeob Lee ,  Chris Pabelico ,  Yi Xu ,  Tae Hong Ha ,  Xianmin Tang ,  Jin Hee Park

IPC: H01L21/768 ,  H01L21/02

Abstract: Apparatuses and methods to provide electronic devices having metal films are provided. Some embodiments of the disclosure utilize a metallic tungsten layer as a liner that is filled with a metal film comprising cobalt. The metallic tungsten layer has good adhesion to the cobalt leading to enhanced cobalt gap-fill performance.

公开(公告)号：US20220028793A1

公开(公告)日：2022-01-27

申请号：US17498247

申请日：2021-10-11

Applicant: Applied Materials, Inc.

Inventor： Yu Lei ,  Sang-Hyeob Lee ,  Chris Pabelico ,  Yi Xu ,  Tae Hong Ha ,  Xianmin Tang ,  Jin Hee Park

IPC: H01L23/532 ,  H01L21/768

Abstract: Apparatuses and methods to provide electronic devices having metal films are provided. Some embodiments of the disclosure utilize a metallic tungsten layer as a liner that is filled with a metal film comprising cobalt. The metallic tungsten layer has good adhesion to the cobalt leading to enhanced cobalt gap-fill performance.

公开(公告)号：US11948836B2

公开(公告)日：2024-04-02

申请号：US17498247

申请日：2021-10-11

Applicant: Applied Materials, Inc.

Inventor： Yu Lei ,  Sang-Hyeob Lee ,  Chris Pabelico ,  Yi Xu ,  Tae Hong Ha ,  Xianmin Tang ,  Jin Hee Park

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L21/76843 ,  H01L21/02175 ,  H01L21/02205 ,  H01L21/76831 ,  H01L21/76837 ,  H01L21/76876 ,  H01L21/76877

Abstract: Apparatuses and methods to provide electronic devices having metal films are provided. Some embodiments of the disclosure utilize a metallic tungsten layer as a liner that is filled with a metal film comprising cobalt. The metallic tungsten layer has good adhesion to the cobalt leading to enhanced cobalt gap-fill performance.

公开(公告)号：US11171045B2

公开(公告)日：2021-11-09

申请号：US16401133

申请日：2019-05-02

Applicant: Applied Materials, Inc.

Inventor： Yu Lei ,  Sang-Hyeob Lee ,  Chris Pabelico ,  Yi Xu ,  Tae Hong Ha ,  Xianmin Tang ,  Jin Hee Park

IPC: H01L21/768 ,  H01L21/02

Abstract: Apparatuses and methods to provide electronic devices having metal films are provided. Some embodiments of the disclosure utilize a metallic tungsten layer as a liner that is filled with a metal film comprising cobalt. The metallic tungsten layer has good adhesion to the cobalt leading to enhanced cobalt gap-fill performance.

公开(公告)号：US11118278B2

公开(公告)日：2021-09-14

申请号：US16656026

申请日：2019-10-17

Applicant: Applied Materials, Inc.

Inventor： Ismail Emesh ,  Roey Shaviv ,  Chris Pabelico

IPC: C25D5/00 ,  C25D5/02 ,  C25D3/18 ,  C25D7/12

Abstract: Implementations of the disclosure may include methods of electroplating features formed on a semiconductor device, such as the trenches and vias formed by single or dual Damascene processes using a cobalt plating bath. The cobalt electroplating bath may contain “additive packages” or “additive systems” that include a combination of additives in certain ratios that facilitate the metal filling of high aspect ratio sub-micrometer features. Implementations of the disclosure provide new cobalt plating bath methods and chemistries and that include alkyl modified imidazoles, imidazolines, and imidazolidines suppressor compounds.