公开(公告)号：US20030185267A1

公开(公告)日：2003-10-02

申请号：US10109288

申请日：2002-03-28

Applicant: APPLIED OPTOELECTRONICS, INC.

Inventor： Wen-Yen Hwang ,  Klaus Alexander Anselm ,  Jun Zheng

IPC: H01S003/08

CPC classification number: H01S5/18358 ,  H01S5/1833 ,  H01S5/18338 ,  H01S5/18369 ,  H01S5/205 ,  H01S2301/166

Abstract: A surface-emitting laser, such as a VCSEL, for generating single-transverse mode laser light at a lasing wavelength, has a first mirror and a second mirror positioned so as to define a laser cavity therebetween, and a semiconductor active region disposed between the first and second mirrors for amplifying, by stimulated emission, light in the laser cavity at the lasing wavelength. An annular antiguide structure is disposed within the laser cavity and between the active region and one of the first and second mirrors, the annular antiguide structure comprising an antiguide material and having a central opening, the central opening comprising a second material having an index of refraction for light at the lasing wavelength smaller than that of the antiguide material, whereby the annular antiguide structure causes preferential antiguiding of higher order transverse lasing modes in the laser cavity.

Abstract translation: 用于产生激光波长的单横模式激光的诸如VCSEL的表面发射激光器具有定位成在其间限定激光腔的第一反射镜和第二反射镜，以及位于 第一和第二镜，用于通过受激发射在激光波长处放大激光腔中的光。 环形防水结构设置在激光腔内并且在有源区域与第一和第二反射镜之一之间，环形防水结构包括防护材料并具有中心开口，中心开口包括具有折射率的第二材料 对于激光波长小于抗蚀剂材料的波长的光，由此环形抗蚀剂结构在激光腔中引起较高阶横向激光模式的优先防御。

公开(公告)号：US20030081642A1

公开(公告)日：2003-05-01

申请号：US10000672

申请日：2001-10-31

Applicant: APPLIED OPTOELECTRONICS, INC.

Inventor： Wen-Yen Hwang ,  Chih-Hsiang Lin ,  Jun Zheng ,  James N. Baillargeon

IPC: H01S003/10 ,  H01S005/00

CPC classification number: H01S5/18341 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/06206 ,  H01S5/18302 ,  H01S5/18369 ,  H01S5/3095

Abstract: An embodiment of a surface-emitting laser structure includes a first semiconductor region of a first conductivity type coupled to a first contact and a second semiconductor region of the same conductivity type coupled to a second contact. A third semiconductor region of the opposite conductivity type is coupled to a third contact and interposed between the first and second semiconductor regions. An active region is interposed between the first and third regions. In a further embodiment, the laser structure may include a variable refractive index structure interposed between the second and third semiconductor regions. In another embodiment, a surface-emitting laser structure may include an active region between a first semiconductor region of a first conductivity type coupled to a first contact, and a second semiconductor region of opposite conductivity type coupled to a second contact. A third electrical contact is dielectrically spaced from the second semiconductor region.

Abstract translation: 表面发射激光器结构的实施例包括耦合到第一触点的第一导电类型的第一半导体区域和与第二触点耦合的相同导电类型的第二半导体区域。 具有相反导电类型的第三半导体区域耦合到第三接触并插入在第一和第二半导体区域之间。 有源区域介于第一和第三区域之间。 在另一实施例中，激光器结构可以包括插入在第二和第三半导体区域之间的可变折射率结构。 在另一个实施例中，表面发射激光器结构可以包括耦合到第一触点的第一导电类型的第一半导体区域和耦合到第二触点的相反导电类型的第二半导体区域之间的有源区。 第三电接触件与第二半导体区域介电地间隔开。

公开(公告)号：US20040013154A1

公开(公告)日：2004-01-22

申请号：US10196059

申请日：2002-07-16

Applicant: APPLIED OPTOELECTRONICS, INC.

Inventor： Jun Zheng

IPC: H01S003/08

CPC classification number: H01S5/18383 ,  H01S5/02461 ,  H01S5/041 ,  H01S5/141 ,  H01S5/2022

Abstract: An optically-pumped (OP) multiple quantum well (MQW) active region is disposed in an optical cavity of an OP VCSEL, which generates laser light at a lasing wavelength. The OP VCSEL receives pump light at a first end of the optical cavity. A plurality of quantum well (QW) groups are equally spaced within the active region to correspond in position with antinodes of a standing wave of the lasing wavelength in the optical cavity. The QW groups include a first QW group that is closest to the first end of the optical cavity, and a last QW group that is farthest from the first end of the optical cavity. A plurality of equally thick intermediate absorbing layers are disposed between adjacent QW groups. A last absorbing layer is disposed adjacent to the side of the last QW group farthest away from the first end of the optical cavity. A first absorbing layer is disposed adjacent to the side of the first QW group closest to the first end of the optical cavity. The first absorbing layer has a thickness at least two times smaller than that of the intermediate absorbing layers, thereby leading to improved pump power distribution uniformity across QW groups of the active region.

Abstract translation: 光学泵浦（OP）多量子阱（MQW）有源区域设置在产生激光波长的激光的OP VCSEL的光腔中。 OP VCSEL在光腔的第一端处接收泵浦光。 多个量子阱（QW）组在有源区域内等间隔，以与光腔中的激光波长驻波的波腹位置对应。 QW组包括最接近光学腔的第一端的第一QW组以及距离光学腔的第一端最远的最后一个QW组。 在相邻的QW组之间设置多个相等厚的中间吸收层。 最后一个吸收层被布置成与离开光腔第一端最远的最后一个QW组相邻。 第一吸收层被布置为与最靠近光腔的第一端的第一QW组的一侧相邻。 第一吸收层具有比中间吸收层的厚度小至少两倍的厚度，从而导致在有源区的QW组上的泵功率分布均匀性得到改善。